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摘要: 采用直流反应磁控溅射法在玻璃和石英衬底上沉积了ZnO薄膜, 然后将它们在H２S气流中 硫化得到ZnS薄膜．用x射线粉末衍射仪(XRD)、扫描电子显微镜(SEM)和UV-VIS透过光谱对Zn S薄膜样品进行了分析．结果表明, 该ZnS薄膜为六角晶体结构, 沿(002)晶面择优取向生长, 其结晶状态和透过光谱与工作气压、Ar/O２流量比密切相关. 当气压高于1Pa 时, 得 到厚度很小的ZnS薄膜; 而气压低于1Pa时, 沉积的ZnO薄膜则不能全部反应生成ZnS. 另外, 当Ar/O２流量比低于4∶1或高于4∶1时, 结晶状态都会变差. 此外, 由于ZnS薄 膜具有高 的沿(002)晶面择优取向的生长特性, 使得退火或未退火ZnO薄膜硫化后的晶粒尺寸变化很小 .
Abstract: ZnS films are produced on the glass and quartz substrates by sulfidation of the as-sputtered ZnO films in the H２S-H２-N2 mixtu re. The properties of the f ilms are characterized by using the XRD, SEM and transmission measurements. The results show that the ZnS films with a hexagonol structure have a (002) preferre d orientation. The crystallinity and optical transmission spectra of the ZnS fil ms are related to working pressure and Ar/O２ ratio during the deposi tion of t he ZnO films. At the pressure >1Pa, the thickness of the ZnS films is very sma ll, while at the pressure ２ ratio higher or lower than 4∶1 will leads to the poor crystalline ZnS films. Also it is found that the ZnS films formed from the unannealed ZnO films almost have the same grain size as those formed from th e in-air annealed ZnO films, due to the high (002) preferred orientation during the growth of the ZnS films.
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