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Magneto-resistance for two-dimensional electron gas in GaN/AlxGa1-xN heterostructure

Wang Wei Zhou Wen-Zheng Wei Shang-Jiang Li Xiao-Juan Chang Zhi-Gang Lin Tie Shang Li-Yan Han Kui Duan Jun-Xi Tang Ning Shen Bo Chu Jun-Hao

Magneto-resistance for two-dimensional electron gas in GaN/AlxGa1-xN heterostructure

Wang Wei, Zhou Wen-Zheng, Wei Shang-Jiang, Li Xiao-Juan, Chang Zhi-Gang, Lin Tie, Shang Li-Yan, Han Kui, Duan Jun-Xi, Tang Ning, Shen Bo, Chu Jun-Hao
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  • The magnetotransport measurement is performed on a GaN/AlxGa1-xN heterostructure sample in a low temperature range of 1.4-25 K and at magnetic fields ranging from 0 T up to 13 T. Magnetoresistance of a two-dimensional electron gas confined in the heterostructure is investigated. The negative magnetoresistivity in the whole magnetic field range originates from the electron-electron interactions (EEIs), while the positive magnetoresistivity in the high field range results from the parallel conductance. The EEI correction terms, as well as the concentration and mobility of the parallel channel are obtained by fitting the experimental data. Furthermore, another method of calculation is used to check their accuracy.
    • Funds: Project supported by the National Basic Research Program of China (Grant No. 2007CB924900), the National Natural Science Foundation of China (Grant No. 60906045).
    [1]

    Kong Y C, Zheng Y L, Chu R M, Gu S L 2003 Acta Phys. Sin. 52 1760 (in Chinese) [孔月婵, 郑有炓, 储荣明, 顾书林 2003 物理学报 52 1760]

    [2]

    Wang P Y, Zhang J F, Xue J S, Zhou Y B, Zhang J C, Hao Y 2011 Acta Phys. Sin. 60 117304 (in Chinese) [王平亚, 张金风, 薛军帅, 周勇波, 张进成, 郝跃 2011 物理学报 60 117304]

    [3]

    Nakamura S, Mukai T, Senoh M 1994 J. Appl. Phys. 76 8189

    [4]

    Bulman G E, Doverspike K, Sheppard S T, Weeks T W, Kong H S, Dieringer H M, Edmond J A, Brown J D, Swindell J T, Schetzina J F 1997 Electron. Lett. 33 1556

    [5]

    Khan M A, Chen Q, Shur M S, McDermott B T, Higgins J A, Burm J, Schaff W J, Eastman L F 1996 IEEE Electron Device Lett. 17 584

    [6]

    Wu Y-F, Keller B P, Keller S, Kapolnek D, Kozodoy P, DenBaars S P, Mishra U K 1996 Appl. Phys. Lett. 69 1438

    [7]

    Juang J R, Huang T-Y, Chen T M, Lin, Kim G H, Lee Y, Liang C T, Hang D R, Chen Y F, Chyi J I 2003 J. Appl. Phys. 94 3181

    [8]

    Elsass C R, Smorchkova I P, Heying B, Haus E, Fini P, Maranowski K, Ibbetson J P, Keller S, Petroff P M, DenBaars S P, Mishra U K, Speck J S 1999 Appl. Phys. Lett. 74 3528

    [9]

    Gao K H, Zhou W Z, Zhou Y M, Yu G, Lin T, Guo S L, Chu J H, Dai N, Gu Y, Zhang Y G, Austing D G 2009 Appl. Phys. Lett. 94 152107

    [10]

    Liang C T, Lin L H, Huang J Z, Zhang Z Y, Sun Z H, Chen K Y, Chen N C, Chang P H, Chang C A 2007 Appl. Phys. Lett. 90 022107

    [11]

    Altshuler B, Khmelnitskii D, Larkin A, Lee P 1980 Phys. Rev. B 22 5142

    [12]

    Hikami S, Larkin A, Nagaoka Y 1980 Prog. Theor. Phys. 63 707

    [13]

    Han K, Shen B, Tang N, Tang Y Q, He X W, Qin Z X, Yang Z J, Zhang G Y, Lin T, Zhu B, Zhou W Z, Chu J H 2007 Phys. Lett. A 366 267

    [14]

    Grayson M, Fischer F 2005 J. Appl. Phys. 98 013709

    [15]

    Jo J, Sen Y W, Engel L W, Santos M B, Shayegan M 1992 Phys. Rev. B 46 9776

    [16]

    van der Burgt M, Karavolas V C, Peeters F M, Singleton J, Nicholas R J, Herlach F, Harris J J, van Hove M, Borghs G 1995 Phys. Rev. B 52 12218

    [17]

    Hurd C M, McAlister S P, McKinnon W R, Stewart B R, Day D J, Mandeville P, Spring Thorpe A J 1988 J. Appl. Phys. 63 4706

    [18]

    Kane M J, Apsley N, Anderson D A, Taylor L L, Kerr T 1985 J. Phys. C 18 5629

    [19]

    Tang N, Shen B, Wang M J, Han K, Yang Z J, Xu K, Zhang G Y, Lin T, Zhu B, Zhou W Z, Chu J H 2006 Appl. Phys. Lett. 88 172112

    [20]

    Tang N, Shen B, Wang M J, Yang Z J, Xu K, Zhang G Y, Lin T, Zhu B, Zhou W Z, Chu J H 2006 Appl. Phys. Lett. 88 172115

    [21]

    Das B, Miller D C, Datta S, Reifenberger R, Hong W P, Bhattacharya P K, Singh J, Jaffe M 1989 Phys. Rev. B 39 1411

    [22]

    Simmons M Y, Hamilton A R, Pepper M, Linfield E H, Rose P D, Ritchie D A 2000 Phys. Rev. Lett. 84 2489

    [23]

    van Houten H, Williamson J G, Broekaart M E I, Foxon C T, Harris J J 1988 Phys. Rev. B 37 2756

    [24]

    Contreras S, Knap W, Frayssinet E, Sadowski M L, Goiran M, Shur M 2001 J. Appl. Phys. 89 1251

    [25]

    Gilbertson A M, Buckle P D, Emeny M T, Ashley T, Cohen L F 2011 Phys. Rev. B 84 075474

    [26]

    Minkov G M, Germanenko A V, Rut O E, Sherstobitov A A, Larionova V A, Bakarov A K, Zvonkov B N 2006 Phys. Rev. B 74 045314

    [27]

    Contreras S, Knap W, Frayssinet E, Sadowski M L, Goiran M, Shur M 2001 J. Appl. Phys. 89 1251

  • [1]

    Kong Y C, Zheng Y L, Chu R M, Gu S L 2003 Acta Phys. Sin. 52 1760 (in Chinese) [孔月婵, 郑有炓, 储荣明, 顾书林 2003 物理学报 52 1760]

    [2]

    Wang P Y, Zhang J F, Xue J S, Zhou Y B, Zhang J C, Hao Y 2011 Acta Phys. Sin. 60 117304 (in Chinese) [王平亚, 张金风, 薛军帅, 周勇波, 张进成, 郝跃 2011 物理学报 60 117304]

    [3]

    Nakamura S, Mukai T, Senoh M 1994 J. Appl. Phys. 76 8189

    [4]

    Bulman G E, Doverspike K, Sheppard S T, Weeks T W, Kong H S, Dieringer H M, Edmond J A, Brown J D, Swindell J T, Schetzina J F 1997 Electron. Lett. 33 1556

    [5]

    Khan M A, Chen Q, Shur M S, McDermott B T, Higgins J A, Burm J, Schaff W J, Eastman L F 1996 IEEE Electron Device Lett. 17 584

    [6]

    Wu Y-F, Keller B P, Keller S, Kapolnek D, Kozodoy P, DenBaars S P, Mishra U K 1996 Appl. Phys. Lett. 69 1438

    [7]

    Juang J R, Huang T-Y, Chen T M, Lin, Kim G H, Lee Y, Liang C T, Hang D R, Chen Y F, Chyi J I 2003 J. Appl. Phys. 94 3181

    [8]

    Elsass C R, Smorchkova I P, Heying B, Haus E, Fini P, Maranowski K, Ibbetson J P, Keller S, Petroff P M, DenBaars S P, Mishra U K, Speck J S 1999 Appl. Phys. Lett. 74 3528

    [9]

    Gao K H, Zhou W Z, Zhou Y M, Yu G, Lin T, Guo S L, Chu J H, Dai N, Gu Y, Zhang Y G, Austing D G 2009 Appl. Phys. Lett. 94 152107

    [10]

    Liang C T, Lin L H, Huang J Z, Zhang Z Y, Sun Z H, Chen K Y, Chen N C, Chang P H, Chang C A 2007 Appl. Phys. Lett. 90 022107

    [11]

    Altshuler B, Khmelnitskii D, Larkin A, Lee P 1980 Phys. Rev. B 22 5142

    [12]

    Hikami S, Larkin A, Nagaoka Y 1980 Prog. Theor. Phys. 63 707

    [13]

    Han K, Shen B, Tang N, Tang Y Q, He X W, Qin Z X, Yang Z J, Zhang G Y, Lin T, Zhu B, Zhou W Z, Chu J H 2007 Phys. Lett. A 366 267

    [14]

    Grayson M, Fischer F 2005 J. Appl. Phys. 98 013709

    [15]

    Jo J, Sen Y W, Engel L W, Santos M B, Shayegan M 1992 Phys. Rev. B 46 9776

    [16]

    van der Burgt M, Karavolas V C, Peeters F M, Singleton J, Nicholas R J, Herlach F, Harris J J, van Hove M, Borghs G 1995 Phys. Rev. B 52 12218

    [17]

    Hurd C M, McAlister S P, McKinnon W R, Stewart B R, Day D J, Mandeville P, Spring Thorpe A J 1988 J. Appl. Phys. 63 4706

    [18]

    Kane M J, Apsley N, Anderson D A, Taylor L L, Kerr T 1985 J. Phys. C 18 5629

    [19]

    Tang N, Shen B, Wang M J, Han K, Yang Z J, Xu K, Zhang G Y, Lin T, Zhu B, Zhou W Z, Chu J H 2006 Appl. Phys. Lett. 88 172112

    [20]

    Tang N, Shen B, Wang M J, Yang Z J, Xu K, Zhang G Y, Lin T, Zhu B, Zhou W Z, Chu J H 2006 Appl. Phys. Lett. 88 172115

    [21]

    Das B, Miller D C, Datta S, Reifenberger R, Hong W P, Bhattacharya P K, Singh J, Jaffe M 1989 Phys. Rev. B 39 1411

    [22]

    Simmons M Y, Hamilton A R, Pepper M, Linfield E H, Rose P D, Ritchie D A 2000 Phys. Rev. Lett. 84 2489

    [23]

    van Houten H, Williamson J G, Broekaart M E I, Foxon C T, Harris J J 1988 Phys. Rev. B 37 2756

    [24]

    Contreras S, Knap W, Frayssinet E, Sadowski M L, Goiran M, Shur M 2001 J. Appl. Phys. 89 1251

    [25]

    Gilbertson A M, Buckle P D, Emeny M T, Ashley T, Cohen L F 2011 Phys. Rev. B 84 075474

    [26]

    Minkov G M, Germanenko A V, Rut O E, Sherstobitov A A, Larionova V A, Bakarov A K, Zvonkov B N 2006 Phys. Rev. B 74 045314

    [27]

    Contreras S, Knap W, Frayssinet E, Sadowski M L, Goiran M, Shur M 2001 J. Appl. Phys. 89 1251

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  • Received Date:  21 May 2012
  • Accepted Date:  20 June 2012
  • Published Online:  05 December 2012

Magneto-resistance for two-dimensional electron gas in GaN/AlxGa1-xN heterostructure

  • 1. College of Physics Science and Technology, Guangxi University, Nanning 530004, China;
  • 2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
  • 3. Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China;
  • 4. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Fund Project:  Project supported by the National Basic Research Program of China (Grant No. 2007CB924900), the National Natural Science Foundation of China (Grant No. 60906045).

Abstract: The magnetotransport measurement is performed on a GaN/AlxGa1-xN heterostructure sample in a low temperature range of 1.4-25 K and at magnetic fields ranging from 0 T up to 13 T. Magnetoresistance of a two-dimensional electron gas confined in the heterostructure is investigated. The negative magnetoresistivity in the whole magnetic field range originates from the electron-electron interactions (EEIs), while the positive magnetoresistivity in the high field range results from the parallel conductance. The EEI correction terms, as well as the concentration and mobility of the parallel channel are obtained by fitting the experimental data. Furthermore, another method of calculation is used to check their accuracy.

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