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The spectrum-control of dual-wavelength LED with quantum dots planted in quantum wells

Zhang Pan-Jun Sun Hui-Qing Guo Zhi-You Wang Du-Yang Xie Xiao-Yu Cai Jin-Xin Zheng Huan Xie Nan Yang Bin

The spectrum-control of dual-wavelength LED with quantum dots planted in quantum wells

Zhang Pan-Jun, Sun Hui-Qing, Guo Zhi-You, Wang Du-Yang, Xie Xiao-Yu, Cai Jin-Xin, Zheng Huan, Xie Nan, Yang Bin
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  • A theoretical simulation of electrical and optical characteristics of GaN-based dual-wavelength light-emitting diodes (LED) with high In content in the quantum dots (QDs) which are planted in quantum wells is conducted with APSYS software. The adjustment and contrast of the structure of the devices showed that the blue and green dual-wavelength LEDs will have a broader radiation spectrum and a higher color rendering index when QDs are planted in the green quantum wells. QDs have strong blinding capacity with the carriers, and the carriers at the QDs have shorter lifetime than they are in the wetting layers, so the carrier recombination will give preference to the QDs. It is shown that the distribution of the carriers could be easily controlled by adjusting the spacing layer thickness and the spacing layer doping concentration, so as to control the radiation rate of the two active layers of the dual-wavelength LEDs. Therefore, the spectrum-control of the dual-wavelength LED with QDs planted in QWs could be realized by adjusting the concentration of quantum dots, the thickness of the spacing layer and the doping concentration in the spacing layer. This article can provide guidance for the realization of the non-phosphor white LED.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 60877069), the Science and Technology Key Program of Guangdong Province, China (Grant Nos. 2011A081301004, 2012A080304006).
    [1]

    Damilano B, Demolon P, Brault J, Huault T, Natail F, Massies J 2010 J. Appl. Phys. 108 073115

    [2]

    Pimputkar S, Speck J S, DenBaars S P, Nakamura S 2009 Nature Photonics 3 180

    [3]

    Qi Y D, Liang H, Tang W, Lu Z D, Lau K M 2004 J. Cryst. Growth 272 333

    [4]

    Gu X L, Guo X, Liang T, Lin Q M, Guo J, Wu D, Xu L H, Shen G D 2007 Acta Phys. Sin. 56 5531 (in Chinese) [顾晓玲, 郭霞, 梁庭, 林巧明, 郭晶, 吴迪, 徐丽华, 沈光地 2007 物理学报 56 5531]

    [5]

    Fuhrmann D, Rossow U, Netzel C, Bremers H, Ade G, Hinze P, Hangleiter A 2006 Phys. Stat. Sol. (c) 3 1966

    [6]

    Huang C F, Lu C F, Tang T Y, Huang J J, Yang C C 2007 Appl. Phys. Lett. 90 151122

    [7]

    Soh C B, Liu W, Teng J H, Chow S Y, Ang S S, Chua S J 2008 Appl. Phys. Lett. 92 261909

    [8]

    Hirayama H, Tanaka S, Ramvall P, Aoyagi Y 1998 Appl. Phys. Lett. 72 1736

    [9]

    Wang J, Nozaki M, Lachab M, Ishikawa Y, Qhalid Fareed R S,Wang T, Hao M, Sakai S 1999 Appl. Phys. Lett. 75 950

    [10]

    Zhao W, Wang L, Wang J X, Hao Z B, Luo Y 2011 J. Cryst. Growth 327 202

    [11]

    Zhang M, Bhattacharya P, Guo W 2010 Appl. Phys. Lett. 97 011103

    [12]

    Zhang Y Y, Fan G H 2011 Acta. Phys. Sin. 60 018502 (in Chinese) [张运炎, 范广涵 2011 物理学报 60 018502]

    [13]

    Zhang Y Y, Fan G H, Zhang Y, Zheng S W 2011 Acta. Phys. Sin. 60 028503 (in Chinese) [张运炎, 范广涵, 章勇, 郑树文 2011 物理学报 60 028503]

    [14]

    Liu X P, Fan G H, Zhang Y Y, Zheng S W, Gong C C,Wang Y L, Zhang T 2012 Acta. Phys. Sin. 61 138503 (in Chinese) [刘小平, 范广涵, 张运炎, 郑树文, 龚长春, 王永力, 张涛 2011 物理学报 61 138503]

    [15]

    Wang D Y, Sun H Q, Xie X Y, Zhang P J 2012 Acta. Phys. Sin. 61 227303 (in Chinese) [王度阳, 孙慧卿, 谢晓宇, 张盼君 2012 物理学报 61 227303]

    [16]

    Xia C S, Hu W D, Wang C, Li Z F, Chen X S, Lu W, Simon Z M, Li Z Q 2007 Opt. Quant. Electron. 38 1077

    [17]

    Li W J, Zhang B, Xu W L, Lu W 2009 Acta. Phys. Sin. 58 3421 (in Chinese) [李为军, 张波, 徐文兰, 陆卫 2009 物理学报 58 3421]

  • [1]

    Damilano B, Demolon P, Brault J, Huault T, Natail F, Massies J 2010 J. Appl. Phys. 108 073115

    [2]

    Pimputkar S, Speck J S, DenBaars S P, Nakamura S 2009 Nature Photonics 3 180

    [3]

    Qi Y D, Liang H, Tang W, Lu Z D, Lau K M 2004 J. Cryst. Growth 272 333

    [4]

    Gu X L, Guo X, Liang T, Lin Q M, Guo J, Wu D, Xu L H, Shen G D 2007 Acta Phys. Sin. 56 5531 (in Chinese) [顾晓玲, 郭霞, 梁庭, 林巧明, 郭晶, 吴迪, 徐丽华, 沈光地 2007 物理学报 56 5531]

    [5]

    Fuhrmann D, Rossow U, Netzel C, Bremers H, Ade G, Hinze P, Hangleiter A 2006 Phys. Stat. Sol. (c) 3 1966

    [6]

    Huang C F, Lu C F, Tang T Y, Huang J J, Yang C C 2007 Appl. Phys. Lett. 90 151122

    [7]

    Soh C B, Liu W, Teng J H, Chow S Y, Ang S S, Chua S J 2008 Appl. Phys. Lett. 92 261909

    [8]

    Hirayama H, Tanaka S, Ramvall P, Aoyagi Y 1998 Appl. Phys. Lett. 72 1736

    [9]

    Wang J, Nozaki M, Lachab M, Ishikawa Y, Qhalid Fareed R S,Wang T, Hao M, Sakai S 1999 Appl. Phys. Lett. 75 950

    [10]

    Zhao W, Wang L, Wang J X, Hao Z B, Luo Y 2011 J. Cryst. Growth 327 202

    [11]

    Zhang M, Bhattacharya P, Guo W 2010 Appl. Phys. Lett. 97 011103

    [12]

    Zhang Y Y, Fan G H 2011 Acta. Phys. Sin. 60 018502 (in Chinese) [张运炎, 范广涵 2011 物理学报 60 018502]

    [13]

    Zhang Y Y, Fan G H, Zhang Y, Zheng S W 2011 Acta. Phys. Sin. 60 028503 (in Chinese) [张运炎, 范广涵, 章勇, 郑树文 2011 物理学报 60 028503]

    [14]

    Liu X P, Fan G H, Zhang Y Y, Zheng S W, Gong C C,Wang Y L, Zhang T 2012 Acta. Phys. Sin. 61 138503 (in Chinese) [刘小平, 范广涵, 张运炎, 郑树文, 龚长春, 王永力, 张涛 2011 物理学报 61 138503]

    [15]

    Wang D Y, Sun H Q, Xie X Y, Zhang P J 2012 Acta. Phys. Sin. 61 227303 (in Chinese) [王度阳, 孙慧卿, 谢晓宇, 张盼君 2012 物理学报 61 227303]

    [16]

    Xia C S, Hu W D, Wang C, Li Z F, Chen X S, Lu W, Simon Z M, Li Z Q 2007 Opt. Quant. Electron. 38 1077

    [17]

    Li W J, Zhang B, Xu W L, Lu W 2009 Acta. Phys. Sin. 58 3421 (in Chinese) [李为军, 张波, 徐文兰, 陆卫 2009 物理学报 58 3421]

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Publishing process
  • Received Date:  11 December 2012
  • Accepted Date:  30 January 2013
  • Published Online:  05 June 2013

The spectrum-control of dual-wavelength LED with quantum dots planted in quantum wells

  • 1. Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant No. 60877069), the Science and Technology Key Program of Guangdong Province, China (Grant Nos. 2011A081301004, 2012A080304006).

Abstract: A theoretical simulation of electrical and optical characteristics of GaN-based dual-wavelength light-emitting diodes (LED) with high In content in the quantum dots (QDs) which are planted in quantum wells is conducted with APSYS software. The adjustment and contrast of the structure of the devices showed that the blue and green dual-wavelength LEDs will have a broader radiation spectrum and a higher color rendering index when QDs are planted in the green quantum wells. QDs have strong blinding capacity with the carriers, and the carriers at the QDs have shorter lifetime than they are in the wetting layers, so the carrier recombination will give preference to the QDs. It is shown that the distribution of the carriers could be easily controlled by adjusting the spacing layer thickness and the spacing layer doping concentration, so as to control the radiation rate of the two active layers of the dual-wavelength LEDs. Therefore, the spectrum-control of the dual-wavelength LED with QDs planted in QWs could be realized by adjusting the concentration of quantum dots, the thickness of the spacing layer and the doping concentration in the spacing layer. This article can provide guidance for the realization of the non-phosphor white LED.

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