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Influence of shadowing effect on morphology and microstructure of silicon thin film in chemical vapor deposition

Zhang Hai-Long Liu Feng-Zhen Zhu Mei-Fang

Influence of shadowing effect on morphology and microstructure of silicon thin film in chemical vapor deposition

Zhang Hai-Long, Liu Feng-Zhen, Zhu Mei-Fang
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  • Received Date:  28 March 2014
  • Accepted Date:  06 May 2014
  • Published Online:  05 September 2014

Influence of shadowing effect on morphology and microstructure of silicon thin film in chemical vapor deposition

  • 1. College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
Fund Project:  Project supported by the State Key Development Program for Basic Research of China (Grant Nos. 2006CB202601, 2011CBA00705), and the Beijing Municipal Science and Technology Project (Grant No. D121100001812003).

Abstract: Influences of gas incident angle () on surface morphology and microstructure of hydrogenated amorphous silicon (a-Si:H) thin films are investigated, which were grown using an oblique angle hot wire chemical vapor deposition (OAD-HWCVD) technique. An exponential relationship between the tan and RMS roughness is observed. The film surface morphology transforms from a self-affine surface into a mounded surface when the incident angle is larger than a critical angle c(60 c 75). Influences of on the microstructural properties of silicon thin films are characterized using Raman scattering and FT-IR measurements. As c, owing to the qusai-local shadowing effect, increasing increases the quantity and size of micro-voids, leading to the decrease of film density and quality. For c, the nonlocal shadowing effect causes the formation of large voids or cracks and the proportion of multi-hydride (SiHn, n 2) increases. Combined with the scaling theory, the relationship between the shadowing effect and the surface morphologies and microstructures of amorphous silicon thin films is discussed.

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