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EFFECT OF ANNEALING ON THE MAGNETIC PROPERTIES OF Ni80Co20 THIN FILMS WITH IMPURITY LAYERS

TONG LIU-NIU HE XIAN-MEI LU MU

EFFECT OF ANNEALING ON THE MAGNETIC PROPERTIES OF Ni80Co20 THIN FILMS WITH IMPURITY LAYERS

TONG LIU-NIU, HE XIAN-MEI, LU MU
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  • Received Date:  02 April 2000
  • Accepted Date:  13 June 2000
  • Published Online:  20 November 2000

EFFECT OF ANNEALING ON THE MAGNETIC PROPERTIES OF Ni80Co20 THIN FILMS WITH IMPURITY LAYERS

  • 1. (1)华东冶金学院冶金工程系,马鞍山 243002; (2)南京大学物理系,固体微结构物理国家重点实验室,南京 210093

Abstract: The magnetic and transport properties of two series of sputtered [Ni80Co20(L)/Fe(tFe)]N multilayers (MLs) with different Fe layer thickness of tFe=0.1 and 2nm, and varying L were studied and compared with each other. An enhanced anisotropic magnetoresistance (AMR) peak around L=10nm was observed for annealed films with tFe=0.1nm. The position of the enhanced AMR peak is the same as that of transversal MR peak for the deposited MLs with tFe=2nm. For the as-deposited films with impurity Fe layers, when L becomes lower than the electron mean free path of Ni80Co20 alloy, the zero-field resistivity ρ increases with decreasing L and the increase of ρ will exceed that of AMR (Δρ). The L dependence of ρ can be described by Fuchs-Sondheimer theory. The coercivity Hc of the as-deposited films with tFe=0.1nm increases rapidly with increasing L for L<15nm and is almost saturated for L>15nm. The dependence of Hc on L may be related to the interface structure of MLs, which is indicated by a big drop of Hc in the annealed films. Our experimental data show that the interface scattering in MLs may increase AMR; the magnetic alloy interfacial layers in MLs may change the domain structure and enhance transverse MR and AMR.

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