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MONTE CARLO SIMULATION OF C-BN ELECTRONICS TRANSPORT CHARACTERISTICS

YU LI-JUAN ZHU CHANG-CHUN

MONTE CARLO SIMULATION OF C-BN ELECTRONICS TRANSPORT CHARACTERISTICS

YU LI-JUAN, ZHU CHANG-CHUN
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  • Received Date:  15 July 1999
  • Published Online:  05 March 2000

MONTE CARLO SIMULATION OF C-BN ELECTRONICS TRANSPORT CHARACTERISTICS

  • 1. (1)西安建筑科技大学基础课部,西安 710055;西安交通大学微电子工程系,西安 710049; (2)西安交通大学微电子工程系,西安 710049

Abstract: In the paper, according to the energy-band structure of C-BN and specific characteristics of polar semiconductor, the main scattering mechanism of C-BN is built, and the physical model applicable to Monte Carlo(MC) simulation is set up. It is the first time that the stable-state electronics transport characteristics of bulk C-BN is simulated by single electronics MC method. The variation laws of mean drift velocity, mobility as well as electronic energy with electrical field are obtained respectively. Also, the variation laws of electronic energy relaxation time and momentum relaxation time with electrical field are obtained respectively.

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