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MONTE-CARLO CALCULATION OF X-RAY DOSE ENHANCEMENT FACTOR NEARBY HIGH Z METAL CONNECTED INTERFACE

CHEN PAN-XUN MU WEI-BING

MONTE-CARLO CALCULATION OF X-RAY DOSE ENHANCEMENT FACTOR NEARBY HIGH Z METAL CONNECTED INTERFACE

CHEN PAN-XUN, MU WEI-BING
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Publishing process
  • Received Date:  15 May 2000
  • Accepted Date:  19 August 2000
  • Published Online:  20 February 2001

MONTE-CARLO CALCULATION OF X-RAY DOSE ENHANCEMENT FACTOR NEARBY HIGH Z METAL CONNECTED INTERFACE

  • 1. (1)中国工程物理研究院电子工程研究所,绵阳919信箱522分箱,绵阳621900; (2)中国工程物理研究院西南核物理与化学研究所,绵阳919信箱213分箱,绵阳621900

Abstract: The dose would be enhanced on the low- Z material side when X-ray enters the interface constructed with two different materials.The mechanism of dose enhancement has been discussed and the Dose Enhancement Factors of W-Si,W-SiO2,Ta-Si and Ta-SiO2 interfaces are calculated by the Monte-Carlo method.

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