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退火处理对掺铒氢化非晶硅悬挂键密度和光致荧光的影响

赵谦 王波 严辉 久米田稔 清水立生

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退火处理对掺铒氢化非晶硅悬挂键密度和光致荧光的影响

赵谦, 王波, 严辉, 久米田稔, 清水立生
cstr: 32037.14.aps.53.151

Annealing effect on the photoluminescence and dangling bonddensity in erbium-doped hydrogenated amorphous silicon

Zhao Qian, Wang Bo, Yan Hui, M.Kumeda, T.Shimizu
cstr: 32037.14.aps.53.151
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  • 采用磁控溅射技术制备了铒掺杂的氢化非晶硅(a-Si∶H(Er))样品.进一步通过200—500℃温度递增的后退火处理,获得了不同的Si悬挂键(Si-DBs)密度,并在此基础上研究了Si-DBs密度改变对其Er光荧光(Er-PL)的影响.退火温度低于350℃时,Er-PL强度持续增加,但Si-DBs密度的变化显得较复杂;350℃以上时,Er-PL强度随Si-DBs密度的增加而减小.在200—250℃的退火温度范围内,Si-DBs是由于结构弛豫而减少;在250—500℃的退火温度范围内,可能由于Si—H键的断
    In this paper, Er photoluminescence(PL) of Er-doped a-Si:H films, prepared by rf magnetron co-sputtering with various densities of Si dangling bonds(DBs), was studied with structure modification resulting from post annealing at a temperature range of 200-500℃. It was unexpectedly found that, the intensity of the Er-PL continually increases with annealing temperature below 350℃, meanwhile the density of Si-DBs decreases up to 250℃ due to the structural relaxation but then increases up to 500℃ probably due to Si-H being broken. Since the Er3+ ion transition depends on the symmetry of the Er3+ site in the host. The increase in the Er-PL intensity against the decrease of the density of Si-DBs is probably attributed to a change in the environment of Er3+ ions during annealing.
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  • 文章访问数:  8611
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出版历程
  • 收稿日期:  2003-03-12
  • 修回日期:  2003-04-04
  • 刊出日期:  2004-01-15

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