搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

电子器件散粒噪声测试方法研究

陈文豪 杜磊 庄奕琪 包军林 何亮 陈华 孙鹏 王婷岚

引用本文:
Citation:

电子器件散粒噪声测试方法研究

陈文豪, 杜磊, 庄奕琪, 包军林, 何亮, 陈华, 孙鹏, 王婷岚

Shot noise measurement methods in electronic devices

Zhuang Yi-Qi, Bao Jun-Lin, Sun Peng, Wang Ting-Lan, Chen Wen-Hao, Du Lei, He Liang, Chen Hua
PDF
导出引用
  • 本文分析了超导量子干涉器(SQUID)和超导-绝缘-超导(SIS)约瑟夫森结散粒噪声测试方法的应用局限性,提出了常规器件的散粒噪声测试方案.针对常规电子器件散粒噪声特性,研究了噪声测试基本条件,并建立了低温测试系统.通过采用双层屏蔽结构和超低噪声前置放大器,实现了较好的电磁干扰屏蔽和极低的背景噪声.在10 K温度下对常规二极管散粒噪声进行了测试,通过理论和测试结果对比分析,验证了测试系统的准确和可信性.
    The limitations to shot noise measurement methods based on superconducting quantum interference device (SQUID) and superconductivity-insulation-superconductor (SIS) Josephson junction are pointed out, and a method to measure the shot noises of conventional electronic devices is proposed. Shot noise characteristics of conventional electronic devices are analyzed, and then a low-temperature measurement system is established. By using a double-shielding construction and low noise preamplifier, the test system can achieve a good electromagnetic interference shielding and low background noise. The theoretical and the experimental results of shot noises in diodes at 10 K are in good agreement with each other. The accuracy and the credibility of measurement system are proved.
    • 基金项目: 国家重点基础研究发展计划(973计划)(批准号:2010CB631002)资助的课题.
    [1]

    Schottky W,Ann 1918 Phys. 57 541

    [2]

    Zhang Z Y,Wang T H 2004 Acta Phy.Sin. 53 942(in Chinese)[张志勇、王太宏 2004 物理学报 53 942]

    [3]

    Beenakker C,Sch nenberger C 2003 Phys. Today 56 37

    [4]

    Blanter Y,Büttiker M 2000 Physics Reports 336 1

    [5]

    Andersson S,Svensson C 2005 Electron. Lett. 41 869

    [6]

    Jehl X,Payet-Burin P,Baraduc C,Calemczuk R,Sanquer M 1999 Phys. Rev. Lett. 83 1660

    [7]

    Bulashenko O,Mateos J,Pardo D,Gonz T,Reggiani L,Rubí J 1998 Phys. Rev. B 57 1366

    [8]

    Sim H S,Schomerus H 2002 Phys. Rev. Lett. 89 066801

    [9]

    McNeill J A 2009 Custom Integrated Circuits Conference 2009 CICC '09. IEEE, San Jose, Sept. 13—16, 2009, 567

    [10]

    Obrecht M S,Abou-Allam E,Manku T 2002 Electron Devices, IEEE Transactions on 49 524

    [11]

    Yan C,Guofu N,Rezvani A,Taylor S S 2008 Silicon Monolithic Integrated Circuits in RF Systems 2008. SiRF 2008. IEEE Topical Meeting on, Orlando, Jan. 23—25, 2008,118

    [12]

    Chen C,Deen M 2002 Electron Devices, IEEE Transactions on 49 1484

    [13]

    Klein P 2002 Electron Device Letters, IEEE 20 399

    [14]

    Navid R,Dutton R 2002 Simulation of Semiconductor Processes and Devices, 2002 SISPAD 2002. International Conference on, Kobe, Japan, Sept 4—6, 2002, 75

    [15]

    Navid R,Jungemann C,Lee T,Dutton R 2007 J. Appl. Phys. 101 124501

    [16]

    Jeon J,Lee J,Kim J,Park C H,Lee H,Oh H,Kang H K,Park B G,Shin H 2009 VLSI Technology, 2009 Symposium on, Kyoto, Japan, June 16—18, 2009,48

    [17]

    Jehl X,Payet-Burin P,Baraduc C,Calemczuk R,Sanquer M 1999 Rev. Sci. Instrum. 70 2711

    [18]

    Onac E,Balestro F,Trauzettel B,Lodewijk C F,Kouwenhoven L P 2006 Phys. Rev. Lett. 96 026803

    [19]

    Steinbach A H,Martinis J M,Devoret M H 1996 Phys. Rev. Lett. 76 3806

    [20]

    Pralgauskaite S,Palenskis V,Matukas J,Petrulis J,KurilCik G 2007 Noise and Fluctuations in Circuits, Devices, and Materials, Florence, Italy, May 21, 2007 66001H

    [21]

    Pralgauskait S,Palenskis V,Matukas J,Vizbaras A 2007 Noise and Fluctuations in Circuits, Devices, and Materials, Florence, Italy, May 21, 2007 66000L

    [22]

    Gomila G,Pennetta C,Reggiani L,Sampietro M,Ferrari G,Bertuccio G 2004 Phys. Rev. Lett. 92 226601

    [23]

    Charalambous C D,Menemenlis N 2001 Communications, 2001. ICC 2001. IEEE International Conference on, Helsinki, Finland, Jun 11—14, 2001,2246

    [24]

    Charalambous C D,Menemenlis N,Kabranov O H,Makrakis D 2001 Communications, 2001. ICC 2001. IEEE International Conference on, Helsinki, Finland, Jun 11—14, 2001,1011

    [25]

    Nagaev K E 1995 Phys. Rev. B 52 4740

    [26]

    Kozub V V,Rudin A M 1995 Phys. Rev. B 52 7853

    [27]

    Vandamme L 2005 Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices 189

    [28]

    Cowley A M,Zettler R A 1968 Electron Devices, IEEE Transactions on 15 761

    [29]

    Montgomery H C,Clark M A 1953 Journal of Applied Physics 24 1337

    [30]

    Gomila G,Reggiani L,Rub X M J 2000 Journal of Applied Physics 88 3079

  • [1]

    Schottky W,Ann 1918 Phys. 57 541

    [2]

    Zhang Z Y,Wang T H 2004 Acta Phy.Sin. 53 942(in Chinese)[张志勇、王太宏 2004 物理学报 53 942]

    [3]

    Beenakker C,Sch nenberger C 2003 Phys. Today 56 37

    [4]

    Blanter Y,Büttiker M 2000 Physics Reports 336 1

    [5]

    Andersson S,Svensson C 2005 Electron. Lett. 41 869

    [6]

    Jehl X,Payet-Burin P,Baraduc C,Calemczuk R,Sanquer M 1999 Phys. Rev. Lett. 83 1660

    [7]

    Bulashenko O,Mateos J,Pardo D,Gonz T,Reggiani L,Rubí J 1998 Phys. Rev. B 57 1366

    [8]

    Sim H S,Schomerus H 2002 Phys. Rev. Lett. 89 066801

    [9]

    McNeill J A 2009 Custom Integrated Circuits Conference 2009 CICC '09. IEEE, San Jose, Sept. 13—16, 2009, 567

    [10]

    Obrecht M S,Abou-Allam E,Manku T 2002 Electron Devices, IEEE Transactions on 49 524

    [11]

    Yan C,Guofu N,Rezvani A,Taylor S S 2008 Silicon Monolithic Integrated Circuits in RF Systems 2008. SiRF 2008. IEEE Topical Meeting on, Orlando, Jan. 23—25, 2008,118

    [12]

    Chen C,Deen M 2002 Electron Devices, IEEE Transactions on 49 1484

    [13]

    Klein P 2002 Electron Device Letters, IEEE 20 399

    [14]

    Navid R,Dutton R 2002 Simulation of Semiconductor Processes and Devices, 2002 SISPAD 2002. International Conference on, Kobe, Japan, Sept 4—6, 2002, 75

    [15]

    Navid R,Jungemann C,Lee T,Dutton R 2007 J. Appl. Phys. 101 124501

    [16]

    Jeon J,Lee J,Kim J,Park C H,Lee H,Oh H,Kang H K,Park B G,Shin H 2009 VLSI Technology, 2009 Symposium on, Kyoto, Japan, June 16—18, 2009,48

    [17]

    Jehl X,Payet-Burin P,Baraduc C,Calemczuk R,Sanquer M 1999 Rev. Sci. Instrum. 70 2711

    [18]

    Onac E,Balestro F,Trauzettel B,Lodewijk C F,Kouwenhoven L P 2006 Phys. Rev. Lett. 96 026803

    [19]

    Steinbach A H,Martinis J M,Devoret M H 1996 Phys. Rev. Lett. 76 3806

    [20]

    Pralgauskaite S,Palenskis V,Matukas J,Petrulis J,KurilCik G 2007 Noise and Fluctuations in Circuits, Devices, and Materials, Florence, Italy, May 21, 2007 66001H

    [21]

    Pralgauskait S,Palenskis V,Matukas J,Vizbaras A 2007 Noise and Fluctuations in Circuits, Devices, and Materials, Florence, Italy, May 21, 2007 66000L

    [22]

    Gomila G,Pennetta C,Reggiani L,Sampietro M,Ferrari G,Bertuccio G 2004 Phys. Rev. Lett. 92 226601

    [23]

    Charalambous C D,Menemenlis N 2001 Communications, 2001. ICC 2001. IEEE International Conference on, Helsinki, Finland, Jun 11—14, 2001,2246

    [24]

    Charalambous C D,Menemenlis N,Kabranov O H,Makrakis D 2001 Communications, 2001. ICC 2001. IEEE International Conference on, Helsinki, Finland, Jun 11—14, 2001,1011

    [25]

    Nagaev K E 1995 Phys. Rev. B 52 4740

    [26]

    Kozub V V,Rudin A M 1995 Phys. Rev. B 52 7853

    [27]

    Vandamme L 2005 Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices 189

    [28]

    Cowley A M,Zettler R A 1968 Electron Devices, IEEE Transactions on 15 761

    [29]

    Montgomery H C,Clark M A 1953 Journal of Applied Physics 24 1337

    [30]

    Gomila G,Reggiani L,Rub X M J 2000 Journal of Applied Physics 88 3079

  • [1] 解奕晨, 庄晓如, 岳思君, 李翔, 余鹏, 鲁春. HFE-7100平行微通道流动沸腾实验. 物理学报, 2024, 73(5): 054401. doi: 10.7498/aps.73.20231415
    [2] 唐海涛, 米壮, 王文宇, 唐向前, 叶霞, 单欣岩, 陆兴华. 用于扫描隧道显微镜的低噪声前置电流放大器. 物理学报, 2024, 73(13): 130702. doi: 10.7498/aps.73.20240560
    [3] 史晨阳, 闵光宗, 刘向阳. 蛋白质基忆阻器研究进展. 物理学报, 2020, 69(17): 178702. doi: 10.7498/aps.69.20200617
    [4] 蓝康, 杜倩, 康丽莎, 姜露静, 林振宇, 张延惠. 基于量子点接触的开放双量子点系统电子转移特性. 物理学报, 2020, 69(4): 040504. doi: 10.7498/aps.69.20191718
    [5] 张梦, 姚若河, 刘玉荣, 耿魁伟. 短沟道金属-氧化物半导体场效应晶体管的散粒噪声模型. 物理学报, 2020, 69(17): 177102. doi: 10.7498/aps.69.20200497
    [6] 宋志军, 吕昭征, 董全, 冯军雅, 姬忠庆, 金勇, 吕力. 极低温散粒噪声测试系统及隧道结噪声测量. 物理学报, 2019, 68(7): 070702. doi: 10.7498/aps.68.20190114
    [7] 颜志猛, 王静, 郭健宏. Majorana零模式的电导与低压振荡散粒噪声. 物理学报, 2018, 67(18): 187302. doi: 10.7498/aps.67.20172372
    [8] 顾品超, 张楷亮, 冯玉林, 王芳, 苗银萍, 韩叶梅, 张韩霞. 层状二硫化钼研究进展. 物理学报, 2016, 65(1): 018102. doi: 10.7498/aps.65.018102
    [9] 周洋, 郭健宏. 双量子点结构中Majorana费米子的噪声特性. 物理学报, 2015, 64(16): 167302. doi: 10.7498/aps.64.167302
    [10] 贾晓菲, 杜磊, 唐冬和, 王婷岚, 陈文豪. 准弹道输运纳米MOSFET散粒噪声的抑制研究. 物理学报, 2012, 61(12): 127202. doi: 10.7498/aps.61.127202
    [11] 唐冬和, 杜磊, 王婷岚, 陈华, 陈文豪. 纳米尺度MOSFET过剩噪声的定性分析. 物理学报, 2011, 60(10): 107201. doi: 10.7498/aps.60.107201
    [12] 梁志鹏, 董正超. 半导体/磁性d波超导隧道结中的散粒噪声. 物理学报, 2010, 59(2): 1288-1293. doi: 10.7498/aps.59.1288
    [13] 施振刚, 文伟, 谌雄文, 向少华, 宋克慧. 双量子点电荷比特的散粒噪声谱. 物理学报, 2010, 59(5): 2971-2975. doi: 10.7498/aps.59.2971
    [14] 陈华, 杜磊, 庄奕琪, 牛文娟. Rashba自旋轨道耦合作用下电荷流散粒噪声与自旋极化的关系研究. 物理学报, 2009, 58(8): 5685-5692. doi: 10.7498/aps.58.5685
    [15] 陈 华, 杜 磊, 庄奕琪. 相干介观系统中散粒噪声的Monte Carlo模拟方法研究. 物理学报, 2008, 57(4): 2438-2444. doi: 10.7498/aps.57.2438
    [16] 安兴涛, 李玉现, 刘建军. 介观物理系统中的噪声. 物理学报, 2007, 56(7): 4105-4112. doi: 10.7498/aps.56.4105
    [17] 张志勇, 王太宏. 用散粒噪声测量碳纳米管中Luttinger参数. 物理学报, 2004, 53(3): 942-946. doi: 10.7498/aps.53.942
    [18] 董正超, 邢定钰, 董锦明. 铁磁-超导隧道结中的散粒噪声. 物理学报, 2001, 50(3): 556-560. doi: 10.7498/aps.50.556
    [19] 朱主祥, 郑大昉, 刘有延. 一维介观系统的隧道电流零频散粒噪声谱密度. 物理学报, 1999, 48(2): 302-313. doi: 10.7498/aps.48.302
    [20] 陈進光. P-N结二极管中的散粒噪声与热噪声. 物理学报, 1965, 21(2): 383-389. doi: 10.7498/aps.21.383
计量
  • 文章访问数:  9200
  • PDF下载量:  1366
  • 被引次数: 0
出版历程
  • 收稿日期:  2010-09-06
  • 修回日期:  2011-01-11
  • 刊出日期:  2011-05-15

/

返回文章
返回