搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

无序光子晶体提高GaN基蓝光发光二极管光提取效率的研究

陈新莲 孔凡敏 李康 高晖 岳庆炀

引用本文:
Citation:

无序光子晶体提高GaN基蓝光发光二极管光提取效率的研究

陈新莲, 孔凡敏, 李康, 高晖, 岳庆炀

Improvement of light extraction efficiency of GaN-based blue light-emitting diode by disorder photonic crystal

Chen Xin-Lian, Kong Fan-Min, Li Kang, Gao Hui, Yue Qing-Yang
PDF
导出引用
  • 亚波长尺度光子晶体结构可有效提升发光二极管(LED)的光提取效率(LEE), 然而在制造过程中会存在缺陷或无序. 利用时域有限差分法对理想方形光子晶体结构进行了优化, 在此基础上对三种无序光子晶体结构进行了仿真, 研究了光子晶体结构参数的无序变化对GaN基蓝光LED LEE的影响.结果表明, 光子晶体空气孔位置和半径的无序变化使优化的80 nm光子晶体LED的LEE下降, 而可使非优化的60 nm光子晶体LED的LEE增加;当光子晶体空气孔位置和半径的无序变化量从0到±20 nm之间变化时, LEE最大会产生53.8% 的浮动;光子晶体刻蚀深度的无序变化对LEE影响较小, 一般可以忽略. 研究结果为高性能蓝光光子晶体LED的设计制作提供了重要的理论参考.
    Sub-wavelength photonic crystal can effectively improve the light extraction efficiency (LEE) of the light emitting diode (LED). However, it is inevitable to have defects, (namely disorder structures) during its fabrication. In this study, the LED model with ideal quadrate photonic crystal is optimized by using the finite-different time domain method. Three different LED structures with various disordered photonic crystals are further simulated. We investigate the influences of several stochastic variables (including position, radius, and depth of an air hole) of the photonic crystal on the LEE of GaN based blue LEDs. It can be found that regarding photonic crystal LED whose air hole radius is optimized to 80 nm, the stochastic variables of the position and radius will reduce its LEE. However, an opposite trend is found when this radius is replaced by 60 nm, which is not optimized. Furhermore, the LEE fluctuates inside to an extent of 53.8% as two stochastic variables (including the randomized position and the randomized radius) change from 0 nm to ±20 nm. The influence of the stochastic variables of the depth of air hole can be neglected since this variation is very small. The results in this paper have an important reference value for designing and fabricating high-performance blue light photonic crystal LED.
    • 基金项目: 国家重点基础研究发展计划(批准号: 2009CB930503, 2009CB930501)、国家自然科学基金(批准号: 61077043)、教育部留学回国人员科研启动基金、山东省优秀中青年科学家科研奖励基金(批准号: BS2009NJ002)和济南大学校科研基金(批准号: XKY0917)资助的课题.
    • Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2009CB930503, 2009CB930501), the National Natural Science Foundation of China (Grant No. 61077043), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China, the Research Award Fund for Outstanding Young Scientist of Shandong Province, China (Grant No. BS2009NJ002), the Scientific Research Foundation of University of Jinan, China (Grant No. XKY0917).
    [1]

    Schubert E F 2006 Light-Emitting Diodes (New York: Cambridge University Press) p21

    [2]

    Fang Z l, Qin J M 1992 Semiconductor Light-Emitting Material and Device (Shanghai: Fudan Univerty Press) [方志烈, 秦金妹 1992 半导体发光材料和器件 (上海:复旦大学出版社)]

    [3]

    Department of Energy 2008 Solid State Lighting Research and Development Multi-Year Program Plan FY'09-FY'14 2012.2.7

    [4]

    Wierer J J, Steigerwald D A, Krames M R, O'Shea J J, Ludowise M J, Christenson G, Shen Y C, Lowery C, Martin P S, Subramanya S, Gotz W, Gardne N F, Kern R S, Stockman S A 2001 Appl. Phys. Lett. 78 3379

    [5]

    Shchekin O B, Epler J E, Trottier T A, Margalith T, Steigerwald D A, Holcomb M O, Martin P S, Krames M R 2006 Appl. Phys. Lett. 89 071109

    [6]

    Chao C H, Chuang S L, Wu T L 2006 Appl. Phys. Lett. 89 091116

    [7]

    Krames M R, Ochiai-Holcomb M, Höfler G E, Carter-Coman C, Chen E I, Tan I H, Tan T S, Kocot C P, Hueschen M, Posselt J, Loh B, Sasser G, Collins D 1999 Appl. Phys. Lett. 75 2365

    [8]

    Fujii T, Gao Y, Sharma R, Hu E L, Denbaars S P, Nakamura S 2004 Appl. Phys. Lett. 84 855

    [9]

    Matioli E, Weisbuch C 2010 J. Phys. D: Appl. Phys. 43 354005

    [10]

    Xu X S, Chen H D, Zhang D Z 2006 Acta Phys. Sin. 55 6433 (in Chinese) [许兴胜, 陈宏达, 张道中 2006物理学报 55 6433]

    [11]

    Raedt H D, Lagendijk A, Vries P D 1989 Phys. Rev. Lett. 62 47

    [12]

    Wang B W, Jin Y, He S L 2009 J. Appl. Phys. 106 014508

    [13]

    Savona V 2011 Phys. Rev. B 85 085301

    [14]

    Long D H, Hwang I K, Ryu S W 2009 IEEE J. Sel. Top. Quan. Elec. 15 1257

    [15]

    Long D H, Kag H I, Wan S 2008 Jpn. J. Appl. Phys. 47 4527

    [16]

    Wiesmann C 2009 Ph. D. Dissertation (Regensburg: Regensburg Universität)

    [17]

    Köhler U, As D J, Schöttker B, Frey T, Lischka K, Scheiner J, Shokhovets S, Goldhahn R 1999 J. Appl. Phys. 85 404

    [18]

    Ryu H Y 2009 J. Kore Phys. Soci. 55 2644

    [19]

    Matiolio E, Fleury B, Rangel E, Melo T, Hu E, Speck J, Weisbuch C 2010 Appl. Phys. Exp. 3 032103

  • [1]

    Schubert E F 2006 Light-Emitting Diodes (New York: Cambridge University Press) p21

    [2]

    Fang Z l, Qin J M 1992 Semiconductor Light-Emitting Material and Device (Shanghai: Fudan Univerty Press) [方志烈, 秦金妹 1992 半导体发光材料和器件 (上海:复旦大学出版社)]

    [3]

    Department of Energy 2008 Solid State Lighting Research and Development Multi-Year Program Plan FY'09-FY'14 2012.2.7

    [4]

    Wierer J J, Steigerwald D A, Krames M R, O'Shea J J, Ludowise M J, Christenson G, Shen Y C, Lowery C, Martin P S, Subramanya S, Gotz W, Gardne N F, Kern R S, Stockman S A 2001 Appl. Phys. Lett. 78 3379

    [5]

    Shchekin O B, Epler J E, Trottier T A, Margalith T, Steigerwald D A, Holcomb M O, Martin P S, Krames M R 2006 Appl. Phys. Lett. 89 071109

    [6]

    Chao C H, Chuang S L, Wu T L 2006 Appl. Phys. Lett. 89 091116

    [7]

    Krames M R, Ochiai-Holcomb M, Höfler G E, Carter-Coman C, Chen E I, Tan I H, Tan T S, Kocot C P, Hueschen M, Posselt J, Loh B, Sasser G, Collins D 1999 Appl. Phys. Lett. 75 2365

    [8]

    Fujii T, Gao Y, Sharma R, Hu E L, Denbaars S P, Nakamura S 2004 Appl. Phys. Lett. 84 855

    [9]

    Matioli E, Weisbuch C 2010 J. Phys. D: Appl. Phys. 43 354005

    [10]

    Xu X S, Chen H D, Zhang D Z 2006 Acta Phys. Sin. 55 6433 (in Chinese) [许兴胜, 陈宏达, 张道中 2006物理学报 55 6433]

    [11]

    Raedt H D, Lagendijk A, Vries P D 1989 Phys. Rev. Lett. 62 47

    [12]

    Wang B W, Jin Y, He S L 2009 J. Appl. Phys. 106 014508

    [13]

    Savona V 2011 Phys. Rev. B 85 085301

    [14]

    Long D H, Hwang I K, Ryu S W 2009 IEEE J. Sel. Top. Quan. Elec. 15 1257

    [15]

    Long D H, Kag H I, Wan S 2008 Jpn. J. Appl. Phys. 47 4527

    [16]

    Wiesmann C 2009 Ph. D. Dissertation (Regensburg: Regensburg Universität)

    [17]

    Köhler U, As D J, Schöttker B, Frey T, Lischka K, Scheiner J, Shokhovets S, Goldhahn R 1999 J. Appl. Phys. 85 404

    [18]

    Ryu H Y 2009 J. Kore Phys. Soci. 55 2644

    [19]

    Matiolio E, Fleury B, Rangel E, Melo T, Hu E, Speck J, Weisbuch C 2010 Appl. Phys. Exp. 3 032103

  • [1] 陈佳楣, 苏杭, 李婉, 张立来, 索鑫磊, 钦敬, 朱坤, 李国龙. 钙钛矿发光二极管光提取性能增强的研究进展. 物理学报, 2020, 69(21): 218501. doi: 10.7498/aps.69.20200755
    [2] 黎振超, 陈梓铭, 邹广锐兴, 叶轩立, 曹镛. 有机添加剂在金属卤化钙钛矿发光二极管中的应用. 物理学报, 2019, 68(15): 158505. doi: 10.7498/aps.68.20190307
    [3] 时强, 李路平, 张勇辉, 张紫辉, 毕文刚. GaN/InxGa1-xN型最后一个量子势垒对发光二极管内量子效率的影响. 物理学报, 2017, 66(15): 158501. doi: 10.7498/aps.66.158501
    [4] 陈湛旭, 万巍, 何影记, 陈耿炎, 陈泳竹. 利用单层密排的纳米球提高发光二极管的出光效率. 物理学报, 2015, 64(14): 148502. doi: 10.7498/aps.64.148502
    [5] 朱小敏, 任新成, 郭立新. 指数型粗糙地面与上方矩形截面柱宽带电磁散射的时域有限差分法研究. 物理学报, 2014, 63(5): 054101. doi: 10.7498/aps.63.054101
    [6] 刘建晓, 张郡亮, 苏明敏. 基于时域有限差分法的各向异性铁氧体圆柱电磁散射分析. 物理学报, 2014, 63(13): 137501. doi: 10.7498/aps.63.137501
    [7] 任新成, 郭立新, 焦永昌. 雪层覆盖的粗糙地面与上方矩形截面柱复合电磁散射的时域有限差分法研究. 物理学报, 2012, 61(14): 144101. doi: 10.7498/aps.61.144101
    [8] 潘伟, 余和军, 张晓光, 席丽霞. 高Q值二维光子晶体缺三腔的数值模拟与分析. 物理学报, 2012, 61(3): 034209. doi: 10.7498/aps.61.034209
    [9] 高晖, 孔凡敏, 李康, 陈新莲, 丁庆安, 孙静. 双层光子晶体氮化镓蓝光发光二极管结构优化的研究. 物理学报, 2012, 61(12): 127807. doi: 10.7498/aps.61.127807
    [10] 岳庆炀, 孔凡敏, 李康, 赵佳. 基于缺陷光子晶体结构的GaN基发光二极管光提取效率的有关研究. 物理学报, 2012, 61(20): 208502. doi: 10.7498/aps.61.208502
    [11] 张军, 于天宝, 刘念华, 廖清华, 何灵娟. 全内反射型三角晶格光子晶体多模波导中的光传播特性. 物理学报, 2011, 60(10): 104217. doi: 10.7498/aps.60.104217
    [12] 高国钦, 马守林, 金峰, 金东范, 卢天健. 声波在二维固/流声子晶体中的禁带特性研究. 物理学报, 2010, 59(1): 393-400. doi: 10.7498/aps.59.393
    [13] 亓丽梅, 杨梓强, 兰峰, 高喜, 史宗君, 梁正. 二维色散和各向异性磁化等离子体光子晶体色散特性研究. 物理学报, 2010, 59(1): 351-359. doi: 10.7498/aps.59.351
    [14] 郭浩, 吴评, 于天宝, 廖清华, 刘念华, 黄永箴. 一种新型的光子晶体偏振光分束器的设计. 物理学报, 2010, 59(8): 5547-5552. doi: 10.7498/aps.59.5547
    [15] 陈依新, 郑婉华, 陈微, 陈良惠, 汤益丹, 沈光地. 表面为二维光子晶体结构的AlGaInP系发光二极管的研究. 物理学报, 2010, 59(11): 8083-8087. doi: 10.7498/aps.59.8083
    [16] 林瀚, 刘守, 张向苏, 刘宝林, 任雪畅. 全息技术制作二维光子晶体蓝宝石衬底提高发光二极管外量子效率. 物理学报, 2009, 58(2): 959-963. doi: 10.7498/aps.58.959
    [17] 陈健, 李小丽, 李海华, 王庆康. 基于正方和六角排列结构光子晶体对发光二极管出光效率的研究. 物理学报, 2009, 58(9): 6216-6221. doi: 10.7498/aps.58.6216
    [18] 李炳乾, 刘玉华, 冯玉春. 大功率GaN基发光二极管等效串联电阻的功率耗散及其对发光效率的影响. 物理学报, 2008, 57(1): 477-481. doi: 10.7498/aps.57.477
    [19] 庄飞, 肖三水, 何江平, 何赛灵. 二维正方各向异性碲圆柱光子晶体完全禁带中缺陷模的FDTD计算分析和设计. 物理学报, 2002, 51(9): 2167-2172. doi: 10.7498/aps.51.2167
    [20] 庄飞, 何赛灵, 何江平, 冯尚申. 大带隙的二维各向异性椭圆介质柱光子晶体. 物理学报, 2002, 51(2): 355-361. doi: 10.7498/aps.51.355
计量
  • 文章访问数:  6013
  • PDF下载量:  883
  • 被引次数: 0
出版历程
  • 收稿日期:  2012-02-07
  • 修回日期:  2012-07-29
  • 刊出日期:  2013-01-05

/

返回文章
返回