酞菁铜与MoS2（0001）范德瓦耳斯异质结研究

曹宁通; 张雷; 吕路; 谢海鹏; 黄寒; 牛冬梅; 高永立

doi:10.7498/aps.63.167903

摘要

利用光电子能谱、原子力显微镜以及低能电子衍射等表面研究手段系统研究了真空沉积生长的酞菁铜薄膜与衬底MoS2（0001）之间的范德瓦耳斯异质结界面电子结构和几何结构. 角分辨光电子能谱清楚地再现了MoS2（0001）衬底在Γ点附近的能带结构. 低能电子衍射结果表明，CuPc薄膜在MoS2（0001）表面沿着衬底表面[1120]，[1210]和[2110]三个晶向有序生长，反映了衬底对CuPc的影响. 原子力显微镜结果表明，CuPc在MoS2 衬底上遵循层状-岛状生长模式：在低生长厚度下（单层薄膜厚度约为0.3 nm），CuPc分子平面平行于MoS2表面上形成均匀连续的薄膜; 在较高的沉积厚度下，CuPc沿衬底晶向形成棒状晶粒，表现出明显的各向异性. 光电子能谱显示界面偶极层为0.07 eV，而且能谱在膜厚1.2 nm饱和，揭示了酞菁铜与MoS2（0001）范德瓦耳斯异质结的能级结构.

关键词:

Abstract

Molecular packing and interfacial electronic properties of well-ordered organic semiconductor, copper phthalocyanine, thin films grown on MoS2(0001) are studied with low energy electron diffraction (LEED) optics, atomic force microscope (AFM) and photoelectron spectroscopy (PES). The band structure of MoS2(0001) around the Γ point of the surface Brillouin zone is given by angle-resolved photoelectron spectroscopy. The LEED patterns indicate that three equivalent well-ordered two-dimensional square lattices are formed in CuPc monolayer thin film along three surface crystalline axes ([1120], [1210] and [2110]) of MoS2 (0001) substrate, respectively. The AFM measurements show that the growth of CuPc on MoS2 (0001) occurs in a Stranski-Krastanov mode. The CuPc molecule can be flat-laying on MoS2(0001) at low coverage (～0.3 nm), but form strip-like crystals along the surface crystal axes of MoS2 (0001) at high coverage (>2.4 nm). The CuPc molecule shows obvious anisotropy, indicating that the molecular plane is not parallel to the MoS2 surface. The PES measurements show there is no charge transfer process at the interface, indicating weak van der Waals interaction between CuPc and MoS2(0001).

Keywords:

作者及机构信息

1.
中南大学先进材料超微结构与超快过程研究所, 长沙 410083;

2.
Department of Physics and Astronomy, University of Rochester, Rochester 14627, USA

基金项目: 国家自然科学基金（批准号：51173205）、中央高等学校基本科研基金（批准号：2013zzts155）和中南大学贵重仪器设备开放共享基金（批准号：CSUZC2014023）资助的课题.

Authors and contacts

1.
Institute of Super-Microstructure and Ultrafast Process in Advanced Materials, Central South University, Changsha 410083, China;

2.
Department of Physics and Astronomy, University of Rochester, Rochester 14627, USA

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51173205), the Fundamental Scientific Research Foundation for the Central Universities of China (Grant No. 2013zzts155), and the Open-End Fund for the Valuable and Precision Instruments of Central South University, China (Grant No. CSUZC2014023).

参考文献

[1]	Xu M, Liang T, Shi M, Chen H 2013 Chem. Rev. 113 3766
[2]	Fuhrer M S, Hone J 2013 Nature Nanotechnol. 8 146
[3]	Dong H M 2013 Acta Phys. Sin. 62 206101 (in Chinese) [董海明 2013 物理学报 62 206101]
[4]	Wu M S, Xu B, Liu G, Ouyang C Y 2012 Acta Phys. Sin. 61 227102 (in Chinese) [吴木生, 徐波, 刘刚, 欧阳楚英 2012 物理学报 61 227102]
[5]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nature Nanotechnol. 6 147
[6]	Wang H, Yu L, Lee Y H, Shi Y, Hsu A, Chin M L, Li L J, Dubey M, Kong J, Palacios T 2012 Nano Lett. 12 4674
[7]	Kang J, Li J B, Li S S, Xia J B, Wang L W 2013 Nano Lett. 13 5485
[8]	Britnell L, Ribeiro R M, Eckmann A, Jalil R, Belle B D, Mishchenko A, Kim Y J, Gorbachev R V, Georgiou T, Morozov S V, Grigorenko A N, Geim A K, Casiraghi C, Neto A H C, Novoselov K S 2013 Science 340 1311
[9]	Chen W B, Yang W F, Zou H J, Tang J X, Deng L F, Li P T 2011 Acta Phys. Sin. 60 117107 (in Chinese) [陈卫兵, 杨伟丰, 邹豪杰, 汤建新, 邓林峰, 黎沛涛 2011 物理学报 60 117107]
[10]	Wang N N, Sheng Y J, Zang Y, Jiang Y D 2010 Chin. Phys. B 19 038602
[11]	Nardi M V, Detto F, Aversa L, Verucchi R, Salviati G, Iannotta S, Casarin M 2013 Phys. Chem. Chem. Phys. 15 12864
[12]	Zhao J Q, Ding M, Zhang T Y, Zhang N Y, Pang Y T, Ji Y J, Chen Y, Wang F X, Fu G 2012 Chin. Phys. B 21 057110
[13]	Wu Q H, Hong G, Ng T W, Lee S T 2012 Appl. Phys. Lett. 100 161603
[14]	Wang C G, Irfan I, Turinske A J, Gao Y L 2012 Thin Solid Films 525 64
[15]	Koma A, Sunouchi K 1985 J. Vac. Sci. Technol. B 3 724
[16]	Ludwig C, Strohmaier R, Petersen J, Gompf B, Eisenmenger W 1994 J. Vac. Sci. Technol. B 12 1963
[17]	Okudaira K K, Hasegawa S, Ishii H, Seki K, Harada Y, Ueno N 1999 J. Appl. Phys. 85 6453
[18]	Fukuma T, Kobayashi K, Yamada H, Matsushige K 2004 J. Appl. Phys. 95 4742
[19]	Boker T H, Severin R, Muller A, Janowitz C, Manzke R 2001 Phys. Rev. B 64 235305
[20]	Mahatha S K, Patel K D, Menon K S R 2012 J. Phys.: Condens. Matter 24 475504
[21]	Huang H, Sun J T, Feng Y P, Chen W, Wee A T S 2011 Phys. Chem. Chem. Phys 13 20933
[22]	Xiao K, Deng W, Keum J K, Yoon M, Vlassiouk I V, Clark K W, Li A P, Kravchenko I I, Gu G, Payzant E A, Sumpter B G, Smith S C, Browning J F Geohegan D B 2013 J. Am. Chem. Soc. 135 3680
[23]	McMenamin J C, Spicer W E 1977 Phys. Rev. B 16 5474
[24]	Yamane H, Yabuuchi Y, Fukagawa H, Kera S, Okudaira K K, Ueno N 2006 J. Appl. Phys. 99 093705
[25]	Chen W, Chen S, Huang H, Qi D C, Gao X Y, Wee A T S 2008 Appl. Phys. Lett. 92 063308
[26]	Gao Y L Yan L 2003 Chem. Phys. Lett. 380 451
[27]	Ding H J, Gao Y L, Cinchetti M, Wstenberg J P, Sánchez-Albaneda M, Andreyev O, Bauer M, Aeschlimann M 2008 Phys. Rev. B 78 075311

施引文献

[1]	Xu M, Liang T, Shi M, Chen H 2013 Chem. Rev. 113 3766
[2]	Fuhrer M S, Hone J 2013 Nature Nanotechnol. 8 146
[3]	Dong H M 2013 Acta Phys. Sin. 62 206101 (in Chinese) [董海明 2013 物理学报 62 206101]
[4]	Wu M S, Xu B, Liu G, Ouyang C Y 2012 Acta Phys. Sin. 61 227102 (in Chinese) [吴木生, 徐波, 刘刚, 欧阳楚英 2012 物理学报 61 227102]
[5]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nature Nanotechnol. 6 147
[6]	Wang H, Yu L, Lee Y H, Shi Y, Hsu A, Chin M L, Li L J, Dubey M, Kong J, Palacios T 2012 Nano Lett. 12 4674
[7]	Kang J, Li J B, Li S S, Xia J B, Wang L W 2013 Nano Lett. 13 5485
[8]	Britnell L, Ribeiro R M, Eckmann A, Jalil R, Belle B D, Mishchenko A, Kim Y J, Gorbachev R V, Georgiou T, Morozov S V, Grigorenko A N, Geim A K, Casiraghi C, Neto A H C, Novoselov K S 2013 Science 340 1311
[9]	Chen W B, Yang W F, Zou H J, Tang J X, Deng L F, Li P T 2011 Acta Phys. Sin. 60 117107 (in Chinese) [陈卫兵, 杨伟丰, 邹豪杰, 汤建新, 邓林峰, 黎沛涛 2011 物理学报 60 117107]
[10]	Wang N N, Sheng Y J, Zang Y, Jiang Y D 2010 Chin. Phys. B 19 038602
[11]	Nardi M V, Detto F, Aversa L, Verucchi R, Salviati G, Iannotta S, Casarin M 2013 Phys. Chem. Chem. Phys. 15 12864
[12]	Zhao J Q, Ding M, Zhang T Y, Zhang N Y, Pang Y T, Ji Y J, Chen Y, Wang F X, Fu G 2012 Chin. Phys. B 21 057110
[13]	Wu Q H, Hong G, Ng T W, Lee S T 2012 Appl. Phys. Lett. 100 161603
[14]	Wang C G, Irfan I, Turinske A J, Gao Y L 2012 Thin Solid Films 525 64
[15]	Koma A, Sunouchi K 1985 J. Vac. Sci. Technol. B 3 724
[16]	Ludwig C, Strohmaier R, Petersen J, Gompf B, Eisenmenger W 1994 J. Vac. Sci. Technol. B 12 1963
[17]	Okudaira K K, Hasegawa S, Ishii H, Seki K, Harada Y, Ueno N 1999 J. Appl. Phys. 85 6453
[18]	Fukuma T, Kobayashi K, Yamada H, Matsushige K 2004 J. Appl. Phys. 95 4742
[19]	Boker T H, Severin R, Muller A, Janowitz C, Manzke R 2001 Phys. Rev. B 64 235305
[20]	Mahatha S K, Patel K D, Menon K S R 2012 J. Phys.: Condens. Matter 24 475504
[21]	Huang H, Sun J T, Feng Y P, Chen W, Wee A T S 2011 Phys. Chem. Chem. Phys 13 20933
[22]	Xiao K, Deng W, Keum J K, Yoon M, Vlassiouk I V, Clark K W, Li A P, Kravchenko I I, Gu G, Payzant E A, Sumpter B G, Smith S C, Browning J F Geohegan D B 2013 J. Am. Chem. Soc. 135 3680
[23]	McMenamin J C, Spicer W E 1977 Phys. Rev. B 16 5474
[24]	Yamane H, Yabuuchi Y, Fukagawa H, Kera S, Okudaira K K, Ueno N 2006 J. Appl. Phys. 99 093705
[25]	Chen W, Chen S, Huang H, Qi D C, Gao X Y, Wee A T S 2008 Appl. Phys. Lett. 92 063308
[26]	Gao Y L Yan L 2003 Chem. Phys. Lett. 380 451
[27]	Ding H J, Gao Y L, Cinchetti M, Wstenberg J P, Sánchez-Albaneda M, Andreyev O, Bauer M, Aeschlimann M 2008 Phys. Rev. B 78 075311

[1]	邓祥文, 伍力源, 赵锐, 王嘉鸥, 赵丽娜. 机器学习在光电子能谱中的应用及展望. 物理学报, 2024, 73(21): 210701. doi: 10.7498/aps.73.20240957
[2]	刘俊岭, 柏于杰, 徐宁, 张勤芳. GaS/Mg(OH)₂异质结电子结构的第一性原理研究. 物理学报, 2024, 73(13): 137103. doi: 10.7498/aps.73.20231979
[3]	姜舟, 蒋雪, 赵纪军. 二维kagome晶格过渡金属酞菁基异质结的电子性质. 物理学报, 2023, 72(24): 247502. doi: 10.7498/aps.72.20230921
[4]	丁俊, 文黎巍, 李瑞雪, 张英. 铁电极化翻转对硅烯异质结中电子性质的调控. 物理学报, 2022, 71(17): 177303. doi: 10.7498/aps.71.20220815
[5]	赵林, 刘国东, 周兴江. 高温超导体电子结构和超导机理的角分辨光电子能谱研究. 物理学报, 2021, 70(1): 017406. doi: 10.7498/aps.70.20201913
[6]	赵林, 刘国东, 周兴江. 铁基高温超导体电子结构的角分辨光电子能谱研究. 物理学报, 2018, 67(20): 207413. doi: 10.7498/aps.67.20181768
[7]	徐海超, 牛晓海, 叶子荣, 封东来. 铁基超导体系基于电子关联强度的统一相图. 物理学报, 2018, 67(20): 207405. doi: 10.7498/aps.67.20181541
[8]	李智浩, 曹亮, 郭玉献. 苝四甲酸二酐薄膜电子结构的同步辐射共振光电子能谱研究. 物理学报, 2017, 66(22): 224101. doi: 10.7498/aps.66.224101
[9]	冯小静, 郭玮, 路兴强, 姚洪斌, 李月华. 三态K2分子飞秒含时光电子能谱的理论研究. 物理学报, 2015, 64(14): 143303. doi: 10.7498/aps.64.143303
[10]	张敏, 唐田田, 张朝民. NaLi分子飞秒含时光电子能谱的理论研究. 物理学报, 2014, 63(2): 023302. doi: 10.7498/aps.63.023302
[11]	李艳武, 刘彭义, 侯林涛, 吴冰. Rubrene作电子传输层的异质结有机太阳能电池. 物理学报, 2010, 59(2): 1248-1251. doi: 10.7498/aps.59.1248
[12]	吴海飞, 张寒洁, 廖清, 陆赟豪, 斯剑霄, 李海洋, 鲍世宁, 吴惠祯, 何丕模. Mn/PbTe(111)界面行为的光电子能谱研究. 物理学报, 2009, 58(2): 1310-1315. doi: 10.7498/aps.58.1310
[13]	李训栓, 彭应全, 杨青森, 刑宏伟, 路飞平. 有机半导体异质界面电荷传输解析模型研究. 物理学报, 2007, 56(9): 5441-5445. doi: 10.7498/aps.56.5441
[14]	张文华, 莫雄, 王国栋, 王立武, 徐法强, 潘海斌, 施敏敏, 陈红征, 汪茫. 苯并咪唑苝与金属Ag的界面电子结构研究. 物理学报, 2007, 56(8): 4936-4942. doi: 10.7498/aps.56.4936
[15]	袁勇波, 刘玉真, 邓开明, 杨金龙. SiN团簇光电子能谱的指认. 物理学报, 2006, 55(9): 4496-4500. doi: 10.7498/aps.55.4496
[16]	葛愉成. 用光电子能谱相位确定法同时测量阿秒超紫外线XUV脉冲的频率和强度时间分布. 物理学报, 2005, 54(6): 2653-2661. doi: 10.7498/aps.54.2653
[17]	贾文红, 武海顺. GamPn和GamP-n团簇结构及其光电子能谱的理论研究. 物理学报, 2004, 53(4): 1056-1062. doi: 10.7498/aps.53.1056
[18]	刘红, 陈将伟. 纳米碳管异质结的结构及其电学性质. 物理学报, 2003, 52(3): 664-667. doi: 10.7498/aps.52.664
[19]	崔大复, 王焕华, 戴守愚, 周岳亮, 陈正豪, 杨国桢, 刘凤琴, 奎热西, 钱海杰. Sb掺杂SrTio3透明导电薄膜的光电子能谱研究. 物理学报, 2002, 51(1): 187-191. doi: 10.7498/aps.51.187
[20]	吕斌, 吕萍, 施申蕾, 张建华, 唐建新, 楼辉, 何丕模, 鲍世宁. OPCOT在Ru(0001)表面上的紫外光电子能谱研究. 物理学报, 2002, 51(11): 2644-2648. doi: 10.7498/aps.51.2644

计量

文章访问数: 7090
PDF下载量: 721
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板