双极线性稳压器电离辐射剂量率效应及其损伤分析

王义元; 陆妩; 任迪远; 郭旗; 余学峰; 何承发; 高博

doi:10.7498/aps.60.096104

摘要

为了对双极线性稳压器在电离辐射环境下损伤变化特征及其剂量率效应进行研究,选择一组器件进行60Co γ高低剂量率的辐照和退火试验. 结果表明线性稳压器的输出电压、最大负载电流、线性调整率、压降电压等多个关键参数都有不同程度的蜕变. 且各器件在高低剂量率下的辐照响应略有不同,表现出不同的剂量率效应. 文中通过多种形式的测试结果分析,系统地讨论了各参数变化的原因及其内部各模块对稳压器功能的影响. 结合电离损伤退火特性,探讨了各剂量率效应形成的原因. 这不但对工程应用考核提供了参考,而且为设

关键词:

Abstract

In order to investigate the dose rate effects and the radiation response of the voltage regulator, a group of bipolar linear regulators are irradiated by60Co γ at high and low dose rate. The results show that many of the parameters of the regulator, such as the max drive current, the output voltage, the line regulation and the dropout voltage, are sensitive to ionizing irradiation. Compared the radiation responses of the devices between high and low dose rate, the dose-rate effect is found to be dependent on device. The reasons for the degradation are discussed by combining the radiation response of the transistor and the amplifier with the circuit characteristic of the linear regulator. The dose rate effects are also analyzed from the annealing characteristics. So this is not only useful for their applicalion in space, but also helpful for the design of radiation hardness device.

Keywords:

作者及机构信息

(1)中国科学院新疆理化技术研究所,乌鲁木齐 830011;新疆电子信息材料与器件重点实验室,乌鲁木齐 830011; (2)中国科学院新疆理化技术研究所,乌鲁木齐 830011;新疆电子信息材料与器件重点实验室,乌鲁木齐 830011;中国科学院研究生院,北京 100049

基金项目: 国家自然科学基金(批准号:10975182)资助的课题.

Authors and contacts

(1)Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China; (2)Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;Graduate University of Chinese Academy of Sciences, Beijing 100049, China

参考文献

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[2]	Zheng Y Z,Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F. 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展、陆妩、任迪远、王义元、郭旗、余学峰、何承发 2009 物理学报 58 5572]
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[15]	Rashkeev S C, Schrimpf R D, Fleetwood D M, Schrimpf R D, Witczak S C, Michez A, Pantelides S T, 2002 IEEE Trans. Nucl. Sci. 49 2650
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[19]	Freitag R K, Brown D B 1997 IEEE Trans. Nucl. Sci. 44 1906
[20]	Li R M, Du L, Zhuang Y Q, Bao J L 2007 Acta Phys. Sin. 56 3400 (in Chinese) [李瑞珉、杜磊、庄奕琪、包军林 2007 物理学报 56 3400]
[21]	Zhang T Q, Liu C Y, Liu J L, Wang J P, Huang Z, Xu N J, He B P, Peng H L, Yao Y J 2001 Acta Phys. Sin. 50 2434 (in Chinese) [张廷庆、刘传洋、刘家璐、王剑屏、黄智、徐娜军、何宝平、彭宏论、姚育娟 2001 物理学报 50 2434]
[22]	Li X J, Geng H B, Lan M J, Yang D Z, He S Y, Liu C M 2010 Chin. Phys. B 19 066103
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施引文献

[1]	Nowlin R N, Fleetwood D M, Schrimpf R D, Peas R L,Combs W E 1993 IEEE Trans. Nucl. Sci. 40 1686
[2]	Zheng Y Z,Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F. 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展、陆妩、任迪远、王义元、郭旗、余学峰、何承发 2009 物理学报 58 5572]
[3]	Zhai Y H, Li P, Zhang G J, Fan X, Luo Y X, Hu B, Li J H, Zhang J, Su P 2011 Acta Phys. Sin. 60 (in Chinese) [翟亚红、李平、张国俊、罗玉香、范雪、胡滨、李俊宏、张健、束平 2011 物理学报 60](已接受)
[4]	Johnston A H, Swift G M, Rax B G 1994 IEEE Trans. Nucl. Sci. 41 2427
[5]	Lu W, Ren D Y, Guo Q, Yu X F, Zhang G Q, Yan R L 1998 Research & Progress of SSE 18 323 (in Chinese)[陆妩、任迪远、郭旗、余学锋、张国强、严荣良 1998 固体电子学研究与进展 18 323]
[6]	Zheng Y Z,Lu W, Ren D Y, Wang Y Y, Chen R, Fei W X 2010 Nucl. Tech. 33 357 (in Chinese)[郑玉展、陆妩、任迪远、王义元、陈睿、费武雄 2010 核技术 33 357]
[7]	Abare W, Brueggeman F, Pease R, Krieg J, Simons M 2002 IEEE Radiation Effects Data Workshop Record Phoenix, Arizona, America, July, 2002: 177
[8]	Ramachandran V, Narasimham B, Fleetwood D M, Schrimpf R D, Holman W T, Witulski A F, Pease R L, Dunham G W, Seiler J E, Platteter D G, 2006 IEEE Trans. Nucl. Sci. 53 3223
[9]	Adell P C, Schrimpf R D, Holman W T, Todd J L, Caveriviere S, Cizmarik R R, Galloway K F 2004 IEEE Trans. Nucl. Sci. 51 3816
[10]	Beacour J T, Carriere T, Gach A, Laxague D 1994 IEEE Trans. Nucl. Sci. 41 2420
[11]	Pease R L, McClure S, Gorelick J, Witczak S C 1998 IEEE Trans. Nucl. Sci. 45 2571
[12]	Fleetwood D M, Riewe L C, Schwank J R, Witczak S C, Schrimpf R D 1996 IEEE Trans. Nucl. Sci. 43 2537
[13]	Witczak S C,Lacoe R C, Mayer D C, Fleetwood D M, Schrimpf R D, Galloway K F 1998 IEEE Trans. Nucl. Sci. 45 2339
[14]	Fleetwood D M, Kosier S L, Nowlin R N, Schrimpf R D, Reber R A, DeLaus M, Winokur P S, Wei A, Combs W E, Pease R L 1994 IEEE Trans. Nucl. Sci. 41 1871
[15]	Rashkeev S C, Schrimpf R D, Fleetwood D M, Schrimpf R D, Witczak S C, Michez A, Pantelides S T, 2002 IEEE Trans. Nucl. Sci. 49 2650
[16]	ON Semiconductor, Linear & Switching Voltage Regulator Handbook 4th ed. 2002 Arizona: ON Semiconductor Inc.,
[17]	Tong S B, Hua C Y 2003 Fundamentals of Analog Electronics (Beijing: Higher Education Press) p523(in Chinese)[童诗白、华成英 2003 模拟电子技术基础(北京: 高等教育出版社)第523页]
[18]	Wang Y Y, Lu W, Ren D Y, Zheng Y Z, Gao B, Chen R. 2010 Nucl. Tech. 33 465 (in Chinese)[王义元、陆妩、任迪远、郑玉展、高博,陈睿 2010 核技术 33 465]
[19]	Freitag R K, Brown D B 1997 IEEE Trans. Nucl. Sci. 44 1906
[20]	Li R M, Du L, Zhuang Y Q, Bao J L 2007 Acta Phys. Sin. 56 3400 (in Chinese) [李瑞珉、杜磊、庄奕琪、包军林 2007 物理学报 56 3400]
[21]	Zhang T Q, Liu C Y, Liu J L, Wang J P, Huang Z, Xu N J, He B P, Peng H L, Yao Y J 2001 Acta Phys. Sin. 50 2434 (in Chinese) [张廷庆、刘传洋、刘家璐、王剑屏、黄智、徐娜军、何宝平、彭宏论、姚育娟 2001 物理学报 50 2434]
[22]	Li X J, Geng H B, Lan M J, Yang D Z, He S Y, Liu C M 2010 Chin. Phys. B 19 066103
[23]	Witczak S C, Schrimpf R D, Fleetwood D M, Galloway K F, Lacoe R C, Mayer D C, Puhl J M, Pease R L, Suehle J S 1997 IEEE Trans. Nucl. Sci. 44 1989

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