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双激光脉冲打靶形成Gd等离子体的极紫外光谱辐射研究

谢卓 温志琳 司明奇 窦银萍 宋晓伟 林景全

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双激光脉冲打靶形成Gd等离子体的极紫外光谱辐射研究

谢卓, 温志琳, 司明奇, 窦银萍, 宋晓伟, 林景全

The characteristics of extreme ultraviolet emission from Gd plasma produced by dual pulse laser

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  • 高端芯片制造所需要的极紫外光刻技术位于我国当前面临35项 “卡脖子”关键核心技术之首.高转换效率的极紫外光源是极紫外光刻系统的重要组成部分.本文通过采用双激光脉冲打靶技术实现较强的6.7nm极紫外光输出.首先,理论计算Gd18%2B-Gd27%2B离子最外层4d壳层的4p-4d和4d-4f能级之间跃迁、以及Gd14%2B-Gd17%2B离子最外层4f壳层的4d-4f能级之间跃迁对波长为6.7nm附近极紫外光的贡献.其后开展实验研究,结果表明,随着双脉冲之间延时的逐渐增加,波长为6.7nm附近的极紫外光辐射强度呈现先减弱、后增加、之后再减弱的变化趋势;在双脉冲延时为100ns处产生的极紫外光辐射最强.并且,在延时为100ns处产生的光谱效率最高,相比于单脉冲激光产生的光谱效率提升了33%.此外,发现双激光脉冲打靶技术可以有效减弱等离子体的自吸收效应,获得的6.7nm附近极紫外光谱宽度均小于单激光脉冲打靶的情形,且在脉冲延时为30ns时刻所产生的光谱宽度最窄,约为单独主脉冲产生极紫外光谱宽度的1/3倍.同时,Gd极紫外光谱的变窄提高了波长为6.7nm(0.6%带内)附近的光谱利用效率.
    Laser produce plasma extreme ultraviolet (EUV) source, which has the advantages of small size, high stability and adjustable output wavelength, plays a significant role in the application of EUV lithography. The EUV source with high conversion efficiency is an important part of EUV lithography system. We carried out the experiment of dual-pulse irradiated Gd target to realize the stronger 6.7nm EUV emission output. A planar Gd target is irradiated by a 8 ns full width half maximum pre-pulse Nd:YAG laser operating at its second (532 nm) harmonic to generate a pre-plasma. The pre-plasma is subsequently reheated by a 8 ns full width half maximum main Nd:YAG laser operating with wavelength of 1.06 μm. Firstly, we computed the contribution of transition arrays of the form 4p-4d and 4d-4f from their open 4d subshell in charge states Gd18%2B-Gd27%2B, and transition arrays of the form 4d-4f from their open 4d subshell in charge states Gd14%2B-Gd17%2B on the near 6.7nm EUV source. Subsequently, the experiment results of the dual pulse laser irradiated Gd target show that the intensity of 6.7nm peak EUV emission decreases first, then increases and drops again due to the plasma density decreases gradually when the delay time between the pre-pulse and main-pulse increases. The strongest intensity of 6.7nm peak EUV emission generated when the delay time of 100ns. At the same time, the spectrum efficiency is higher when the delay time of 100ns, which is 33% higher than that of single pulse laser. In addition, the experiment results show that the half width of EUV spectrum produced by dual pulse in the delay between 10-500ns is narrower than the case of signal laser pulse due to the method of dual pulse can suppress the self-absorption effect. The half width is narrowest when the delay of 30ns, which is about 1/3 time of EUV spectrum width generated by a single pulse. At the same time, the narrowing of Gd EUV spectrum improves the spectral utilization efficiency near the 6.7nm wavelength radiation within 0.6% bandwidth.
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出版历程
  • 收稿日期:  2021-08-07
  • 上网日期:  2021-10-12

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