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我们利用光学衍射仪对离子注入后GaAs中晶态区与非晶态区界面的高分辨晶格象进行了分析。得到了界面附近结构变化的初步结果。由非晶态区到晶态区存在如下五个区域:非晶区;晶核与低维有序区;多晶区;单晶畸变区和单晶区。We analysed the high resolution lattice image of interface between crystalline region and amorphous region produced by ion implantation in GaAs with optical diffra-ctometer. The preliminary results show the structure variation at the interface. There are five districts from amorphous to crystalline region. They are: amcrphous area; nuclei, crystallite and low dimensional ordered area; polycrystalline area; distorted mo-nocrystalline area; and monocrystalline area.
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