-
采用交错双栅结构,结合带状电子注,研究了一种工作在140 GHz频段的大功率行波管. 本振模数值计算表明该结构具有良好的色散特性和耦合阻抗.针对所采用的慢波结构, 提出了慢波过渡结构、输入输出耦合器和集中衰减器,保证了行波管的良好工作. 利用三维大信号模拟计算的方法得到的结果显示,当电子注直流功率为5.115 kW,输入信号功率为0.1 W时, 所研究的行波管能在132152 GHz范围内提供大于300 W的峰值功率,其中在138 GHz时得到最大功率546 W, 对应增益为37.37 dB.当在0.0270.46 W内调节输入信号功率,可以保持该行波管在128152 GHz 频带内得到大于440 W的峰值功率,对应的电子效率大于8.6%. 结果显示该行波管将在大功率短毫米波领域具有重要意义和潜在应用价值.Staggered double vane slow wave structure (SWS) and sheet electron beam are employed to investigate a 140 GHz high power traveling wave tube. Numerical calculation of eigenmode shows that the SWS has a good characteristic of dispersion and interaction impedance. The transition structure, input/output coupler and concentrated attenuator are especially proposed for the circuit to ensure that the tube will work well. Particle-in-cell simulation results demonstrate that the traveling wave tube can provide over 300 W of peak power in a frequency range of 132-152 GHz with a maximum of 546 W and a corresponding gain of 37.37 dB at 138 GHz assuming a beam power to be 5.115 kW and input power to be 0.1 W. The output power of the tube can exceed 440 W in a frequency range of 128-152 GHz with a corresponding interaction efficiency of over 8.6% when the input powers range from 0.027 W to 0.46 W. Such a traveling wave tube has a great significance and a potential application in high power short millimeter wave field.
-
Keywords:
- staggered double vane /
- traveling-wave tube /
- sheet electron beam /
- 140 GHz
[1] Joye C D, Shapiro M A, Sirigiri J R, Temkin R J 2009 IEEE Trans. Electron Devices 56 818
[2] Wang G Q, Wang J G, Li X Z, Fan R Y, Wang X Z, Wang X F, Tong C J 2010 Acta Phys. Sin. 59 8459 (in Chinese) [王光强, 王建国, 李小泽, 范如玉, 王行舟, 王雪峰, 童长江 2010 物理学报 59 8459]
[3] Feng J J, Hu Y F, Cai J, Wu X P, Tang Y 2010 Vacuum Electronics 2 27 (in Chinese) [冯进军, 胡银富, 蔡军, 邬显平, 唐烨 2010 真空电子技术 2 27]
[4] Peng W F, Hu Y L, Yang Z H, Li J Q, Lu Q R, Li B 2010 Acta Phys. Sin. 59 8478 (in Chinese) [彭维峰, 胡玉禄, 杨中海, 李建清, 陆麒如, 李斌 2010 物理学报 59 8478]
[5] Qu B, Feng J J 2010 Vacuum Electronics 2 16 (in Chinese) [瞿波, 冯进军 2010 真空电子技术 2 16]
[6] Ding Y G, Liu P K, Zheng Z C, Wang Y, Shen B 2011 High Power Laser and Particle beams 23 1989 (in Chinese) [丁耀根, 刘濮鲲, 张兆传, 王勇, 沈斌 2011 强激光与粒子束 23 1989]
[7] Liu S G, Li H F, Wang W X, Mo Y L 1985 Introduction to Microwave Electronics (Beijing: National Defense Industry Press) p252-269 (in Chinese) [刘盛纲, 李宏福, 王文祥, 莫元龙 1985 微波电子学导论 (北京:国防工业出版社) 第252-269页]
[8] He J, Wei Y Y, Gong Y B, Duan Z Y, Wang W X 2010 Acta Phys. Sin. 59 2843 (in Chinese) [何俊, 魏彦玉, 宫玉彬, 段兆云, 王文祥 2010 物理学报 59 2843]
[9] Alaria M K, Bera A, Sharma R K, Srivastava V 2011 IEEE trans. Plasmas science 39 550
[10] Peng W F, Yang Z H, Hu Y L, Li J Q, Lu Q R, Li B 2011 Chin. Phys. B 20 078401
[11] Gong Y B, Deng M J, Duan Z Y, Lu M Y, Wei Y Y, Wang W X 2007 Acta Phys. Sin. 56 4497 (in Chinese) [宫玉彬, 邓明金, 段兆云, 吕明毅, 魏彦玉, 王文祥 2007 物理学报 56 4497]
[12] Shin Y M, Barnett L R, Baig A, Tsai W C, Luhmann N C Jr. 2011 Proc. IEEE Int. Vac. Electron. Conf. Bangalore, India, February 21-24, 2011 p61
[13] Gong Y B, Yin H R, Yue L N, Lu Z G, Wei Y Y, Feng J J, Duan Z Y, Xu X 2011 IEEE Trans. Plasma Science 39 847
[14] Carlsten B E, Russell S J, Earley L M, Krawczyk F L, Potter J M, Ferguson P, Humphries S Jr. 2005 IEEE Trans. Plasma Sci. 33 85
[15] Lai J Q, Gong Y B, Xu X, Wei Y Y, DuanZ Y, Yue L N, Wang W X China Patent CN201010594432.1 [2010-6-29] (in Chinese) [赖剑强, 宫玉彬, 许雄, 魏彦玉, 段兆云, 岳玲娜, 王文祥 中国专利 CN201010594432.1 [2010-6-29]]
[16] Nguyen K T, Pasour J A, Antonsen T M Jr, Larsen P B, Petillo J J, Levush B 2009 IEEE Trans. Electron devices 55 744
[17] Zhao D 2010 Acta Phys. Sin. 59 1712 (in Chinese) [赵鼎 2010 物理学报 59 1712]
[18] Lai J Q, Gong Y B, Wei Y Y, Duan Z Y, Huang M Z, Wang W X China Patent CN201120106737.3 [2011.10.5] (in Chinese) [赖剑强, 宫玉彬, 魏彦玉, 段兆云, 黄民智, 王文祥 中国专利CN201120106737.3 [2011.10.5]]
[19] Li H Y, Feng J J, Bai G D 2011 Proc. IEEE Int. Vac. Electron. Conf. Bangalore, India, February 21-24, 2011 p379
-
[1] Joye C D, Shapiro M A, Sirigiri J R, Temkin R J 2009 IEEE Trans. Electron Devices 56 818
[2] Wang G Q, Wang J G, Li X Z, Fan R Y, Wang X Z, Wang X F, Tong C J 2010 Acta Phys. Sin. 59 8459 (in Chinese) [王光强, 王建国, 李小泽, 范如玉, 王行舟, 王雪峰, 童长江 2010 物理学报 59 8459]
[3] Feng J J, Hu Y F, Cai J, Wu X P, Tang Y 2010 Vacuum Electronics 2 27 (in Chinese) [冯进军, 胡银富, 蔡军, 邬显平, 唐烨 2010 真空电子技术 2 27]
[4] Peng W F, Hu Y L, Yang Z H, Li J Q, Lu Q R, Li B 2010 Acta Phys. Sin. 59 8478 (in Chinese) [彭维峰, 胡玉禄, 杨中海, 李建清, 陆麒如, 李斌 2010 物理学报 59 8478]
[5] Qu B, Feng J J 2010 Vacuum Electronics 2 16 (in Chinese) [瞿波, 冯进军 2010 真空电子技术 2 16]
[6] Ding Y G, Liu P K, Zheng Z C, Wang Y, Shen B 2011 High Power Laser and Particle beams 23 1989 (in Chinese) [丁耀根, 刘濮鲲, 张兆传, 王勇, 沈斌 2011 强激光与粒子束 23 1989]
[7] Liu S G, Li H F, Wang W X, Mo Y L 1985 Introduction to Microwave Electronics (Beijing: National Defense Industry Press) p252-269 (in Chinese) [刘盛纲, 李宏福, 王文祥, 莫元龙 1985 微波电子学导论 (北京:国防工业出版社) 第252-269页]
[8] He J, Wei Y Y, Gong Y B, Duan Z Y, Wang W X 2010 Acta Phys. Sin. 59 2843 (in Chinese) [何俊, 魏彦玉, 宫玉彬, 段兆云, 王文祥 2010 物理学报 59 2843]
[9] Alaria M K, Bera A, Sharma R K, Srivastava V 2011 IEEE trans. Plasmas science 39 550
[10] Peng W F, Yang Z H, Hu Y L, Li J Q, Lu Q R, Li B 2011 Chin. Phys. B 20 078401
[11] Gong Y B, Deng M J, Duan Z Y, Lu M Y, Wei Y Y, Wang W X 2007 Acta Phys. Sin. 56 4497 (in Chinese) [宫玉彬, 邓明金, 段兆云, 吕明毅, 魏彦玉, 王文祥 2007 物理学报 56 4497]
[12] Shin Y M, Barnett L R, Baig A, Tsai W C, Luhmann N C Jr. 2011 Proc. IEEE Int. Vac. Electron. Conf. Bangalore, India, February 21-24, 2011 p61
[13] Gong Y B, Yin H R, Yue L N, Lu Z G, Wei Y Y, Feng J J, Duan Z Y, Xu X 2011 IEEE Trans. Plasma Science 39 847
[14] Carlsten B E, Russell S J, Earley L M, Krawczyk F L, Potter J M, Ferguson P, Humphries S Jr. 2005 IEEE Trans. Plasma Sci. 33 85
[15] Lai J Q, Gong Y B, Xu X, Wei Y Y, DuanZ Y, Yue L N, Wang W X China Patent CN201010594432.1 [2010-6-29] (in Chinese) [赖剑强, 宫玉彬, 许雄, 魏彦玉, 段兆云, 岳玲娜, 王文祥 中国专利 CN201010594432.1 [2010-6-29]]
[16] Nguyen K T, Pasour J A, Antonsen T M Jr, Larsen P B, Petillo J J, Levush B 2009 IEEE Trans. Electron devices 55 744
[17] Zhao D 2010 Acta Phys. Sin. 59 1712 (in Chinese) [赵鼎 2010 物理学报 59 1712]
[18] Lai J Q, Gong Y B, Wei Y Y, Duan Z Y, Huang M Z, Wang W X China Patent CN201120106737.3 [2011.10.5] (in Chinese) [赖剑强, 宫玉彬, 魏彦玉, 段兆云, 黄民智, 王文祥 中国专利CN201120106737.3 [2011.10.5]]
[19] Li H Y, Feng J J, Bai G D 2011 Proc. IEEE Int. Vac. Electron. Conf. Bangalore, India, February 21-24, 2011 p379
计量
- 文章访问数: 6109
- PDF下载量: 495
- 被引次数: 0