基于Knowm忆阻器的新型忆感器模型的设计与分析

朱雷杰; 王发强

doi:10.7498/aps.68.20190793

摘要

以往有关忆阻器模型及其应用研究主要集中于忆阻器基本概念构建并分析忆阻器模型及其等效电路模型, 而基于市场上商用忆阻器件的研究则很少. 本文根据忆感器与忆阻器之间的理论关系, 基于全球首款商用忆阻器芯片: Knowm忆阻器, 结合第二代电流传输器和跨导运算放大器, 构建了一种新型忆感器模型. 通过调节输入信号的频率和幅值以及运算跨导放大器的跨导增益, 可有效地在电路中实现忆感器忆感值的连续调节. 设计了新型忆感器的LTspice电路模型和硬件实验电路, 以电路仿真结果和硬件电路实验结果验证了新型忆感器模型的有效性和设计方法的正确性.

关键词:

Knowm忆阻器 /
跨导 /
忆感器

Abstract

In the past, the memristor model and its application research have mainly focused on constructing and analyzing the memristor model and its equivalent circuit model based on the basic concept of memristor, while the research based on commercial memristive devices in the market has been rare. According to the theoretical relationship between meminductor and memristor, a new model of meminductor is constructed based on Knowm memristor, the first commercial memristor chip in the world, combined with the second-generation current conveyor and transconductance operational amplifier. By adjusting the frequency and the amplitude of the input voltage and the transconductance gain of the transconductance operational amplifier, the continuous adjustment of the meminductance can be effectively achieved in the circuit. The LTspice circuit model and hardware experimental circuit of the proposed meminductor are designed. The validity of the new meminductor model and the correctness of the design method are verified by LTspice simulations and circuit experiments.

Keywords:

作者及机构信息

西安交通大学电气工程学院, 电力设备电气绝缘国家重点实验室, 西安　710049

通信作者: 王发强, faqwang@mail.xjtu.edu.cn

基金项目: 国家自然科学基金(批准号: 51377124)和陕西省青年科技新星计划项目(批准号: 2016KJXX-40)资助的课题

Authors and contacts

State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi’an Jiaotong University, Xi’an 710049, China

Corresponding author: Wang Fa-Qiang, faqwang@mail.xjtu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51377124) and the New Star of Youth Science and Technology of Shaanxi Province, China (Grant No. 2016KJXX-40)

文章全文

参考文献

[1]	Chua L O 1971 IEEE Trans. Circuit Theory 18 507 Google Scholar
[2]	Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80 Google Scholar
[3]	Jo S H, Chang T, Ebong I, Bhadviya B B, Mazumder P, Lu W 2010 Nano Lett. 10 1297 Google Scholar
[4]	Corinto F, Ascoli A, Gilli M 2011 IEEE Trans. Circuits Syst. I 58 1323 Google Scholar
[5]	Hu W, Wei R S 2019 IEEE Trans. Electron Devices 66 2589 Google Scholar
[6]	Luo S J, Xu N, Guo Z, Zhang Y, Hong H, You L 2019 IEEE Electron Device Lett. 40 635 Google Scholar
[7]	Yakopcic C, Taha T M, Subramanyam G, Pino R E, Rogers S 2011 IEEE Electron Device Lett. 32 1436 Google Scholar
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[11]	Biolek D, Biolek Z, Biolekova V 2009 Conference on Circuit Theory and Design Antalya, Turkey, August 23−27, 2009 p249
[12]	Biolek D, Biolek Z, Biolekova V 2011 Analog Integr. Circuits Sig. Process. 66 129 Google Scholar
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[15]	Wang H, Wang X, Li C D 2013 Abstr. Appl. Anal. DOI:10.1155/2013/281675
[16]	Biolek D, Biolek Z, Kolka Z 2010 IEEE Asia Pacific Conference on Circuits and Systems Kuala Lumpur, Malaysia, December 6—9, 2010 p800
[17]	Pershin Y V, Ventra M D 2010 Electron. Lett. 46 517 Google Scholar
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[25]	Zhao Q, Wang C H, Zhang X 2019 Chaos 29 013141 Google Scholar
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施引文献

图 1 Knowm忆阻器符号

Fig. 1. Symbol of Knowm memristor.

下载: 全尺寸图片幻灯片

图 2 Knowm忆阻器的理论模型

Fig. 2. Theoretical model of Knowm memristor.

下载: 全尺寸图片幻灯片

图 3 忆感器模拟电路图

Fig. 3. Emulator circuit for meminductor.

下载: 全尺寸图片幻灯片

图 4 不同参数情况下的$\varphi - i$关系图　(a) $f$ = 100—140 Hz,${g_{\rm{m}}}$ = 1.62 mA/V; (b) $f$ = 240—400 Hz, ${g_{\rm{m}}}$ = 1.62 mA/V; (c) $f$ = 500—1400 Hz,${g_{\rm{m}}}$ = 1.62 mA/V; (d) $f$ = 120 Hz,${g_{\rm{m}}}$ = 1.49—1.97 mA/V

Fig. 4. $\varphi - i$relationship diagram under different parameters: (a) $f$ = 100—140 Hz,${g_{\rm{m}}}$ = 1.62 mA/V; 11. (b) $f$ = 240—400 Hz, ${g_{\rm{m}}}$ = 1.62 mA/V; (c) $f$ = 500—1400 Hz,${g_{\rm{m}}}$ = 1.62 mA/V; (d) $f$ = 120 Hz,${g_{\rm{m}}}$ =1.49—1.97 mA/V.

下载: 全尺寸图片幻灯片

图 5 不同Knowm忆阻器参数情况下的$\varphi - i$关系图　(a) ${V_a}$, ${V_{\rm{b}}}$; (b) ${G_{\rm{a}}}$, ${G_{\rm{b}}}$

Fig. 5. $\varphi - i$relationship diagram under different Knowm memristor parameters: (a) ${V_a}$,${V_{\rm{b}}}$; (b) ${G_{\rm{a}}}$,${G_{\rm{b}}}$.

下载: 全尺寸图片幻灯片

图 6 实验接线图

Fig. 6. Wiring diagram for the experiment.

下载: 全尺寸图片幻灯片

图 7 不同参数作用下的$\varphi - i$关系图, 其中第一通道为${v_{\rm{o}}}(t)/{\rm{V}}$, 第二通道为${v_{\rm{1}}}(t)/{\rm{V}}$　(a) $f$ = 100 Hz,${g_{\rm{m}}}$ = 1.62 mA/V; (b) $f$ = 120 Hz,${g_{\rm{m}}}$ = 1.62 mA/V; (c) $f$ = 140 Hz, ${g_{\rm{m}}}$ = 1.62 mA/V; (d) $f$ = 120 Hz,${g_{\rm{m}}}$ = 1.49 mA/V

Fig. 7. $\varphi - i$relationship diagram under different parameters. The first channel is ${v_{\rm{o}}}(t)/{\rm{V}}$, and the second channel is$ {v_{{1}}}(t)/{\rm{V}} $: (a) $f$ = 100 Hz,${g_{\rm{m}}}$ = 1.62 mA/V; (b) $f$ = 120 Hz,${g_{\rm{m}}}$ = 1.62 mA/V; (c) $f$ = 140 Hz,${g_{\rm{m}}}$ = 1.62 mA/V; (d) $f$ = 120 Hz,${g_{\rm{m}}}$ = 1.49 mA/V.

下载: 全尺寸图片幻灯片

表 1 LTspice仿真电路中使用的元件参数值

Table 1. Component parameter values used in LTspice simulation circuits.

元件	参数值
${V_{{\rm{dd}}}}$/V	$ \pm {\rm{10 }}$
${V_{\rm{m}}}$/mV	60
${R_{\rm{1}}}$/kΩ	56
${R_2}$/kΩ	56
${R_6}$/kΩ	51
${R_7}$/kΩ	200
$C$	$100\;{\rm{ nF}}-{R_3} = {R_4} = 43\;{\rm{k}}\Omega,{R_5} = 22\;{\rm{k}}\Omega $
	${\rm{47\;nF}}-{R_3} = {R_4}={\rm{80\;k}}\Omega,{R_5}={\rm{40\;k}}\Omega $
	$10\;{\rm{ nF}}-{R_3} = {R_4} = 100\;{\rm{ k}}\Omega,{R_5} = 50\;{\rm{ k}}\Omega $

下载: 导出CSV

[1]	Chua L O 1971 IEEE Trans. Circuit Theory 18 507 Google Scholar
[2]	Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80 Google Scholar
[3]	Jo S H, Chang T, Ebong I, Bhadviya B B, Mazumder P, Lu W 2010 Nano Lett. 10 1297 Google Scholar
[4]	Corinto F, Ascoli A, Gilli M 2011 IEEE Trans. Circuits Syst. I 58 1323 Google Scholar
[5]	Hu W, Wei R S 2019 IEEE Trans. Electron Devices 66 2589 Google Scholar
[6]	Luo S J, Xu N, Guo Z, Zhang Y, Hong H, You L 2019 IEEE Electron Device Lett. 40 635 Google Scholar
[7]	Yakopcic C, Taha T M, Subramanyam G, Pino R E, Rogers S 2011 IEEE Electron Device Lett. 32 1436 Google Scholar
[8]	Corinto F, Ascoli A 2012 IEEE Trans. Circuits Syst. I 59 2713 Google Scholar
[9]	Ventra M D, Pershin Y V, Chua L O 2009 Proc. IEEE 97 1371 Google Scholar
[10]	Han J H, Song C, Gao S, Wang Y Y, Chen C, Pan F 2014 ACS Nano 8 10043 Google Scholar
[11]	Biolek D, Biolek Z, Biolekova V 2009 Conference on Circuit Theory and Design Antalya, Turkey, August 23−27, 2009 p249
[12]	Biolek D, Biolek Z, Biolekova V 2011 Analog Integr. Circuits Sig. Process. 66 129 Google Scholar
[13]	Li C, Wang X D 2012 Microelectronics 42 584
[14]	王晓媛, 俞军, 王光义 2018 物理学报 67 098501 Google Scholar Wang X Y, Yu J, Wang G Y 2018 Acta Phys. Sin. 67 098501 Google Scholar
[15]	Wang H, Wang X, Li C D 2013 Abstr. Appl. Anal. DOI:10.1155/2013/281675
[16]	Biolek D, Biolek Z, Kolka Z 2010 IEEE Asia Pacific Conference on Circuits and Systems Kuala Lumpur, Malaysia, December 6—9, 2010 p800
[17]	Pershin Y V, Ventra M D 2010 Electron. Lett. 46 517 Google Scholar
[18]	Pershin Y V, Ventra M D 2011 Electron. Lett. 47 243 Google Scholar
[19]	Yu D S, Liang Y, Lu H H C, Fernando T, Hu Y H 2014 Chin. Phys. B 23 070702 Google Scholar
[20]	Yu D S, Zhou Z, Iu H H C, Fernando T, Hu Y H 2014 IEEE Trans. Circuits Syst. II 61 758 Google Scholar
[21]	Sah M P, Budhathoki R K, Yang C J, Kim H 2014 Circuits Syst. Signal Process. 33 2363 Google Scholar
[22]	Wang G Y, Jin P P, Wang X W, Shen Y R, Yuan F, Wang X Y 2016 Chin. Phys. B 25 090502 Google Scholar
[23]	李志军, 曾以成, 谭志平 2014 物理学报 63 098501 Google Scholar Li Z J, Zeng Y C, Tan Z P 2014 Acta Phys. Sin. 63 098501 Google Scholar
[24]	Yunus B 2018 Electrica 18 36
[25]	Zhao Q, Wang C H, Zhang X 2019 Chaos 29 013141 Google Scholar
[26]	Michael A N, Timothy W M 2014 Plos One 9 e85175 Google Scholar

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基于Knowm忆阻器的新型忆感器模型的设计与分析