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Dai Fang-Bo, Yuan Jian-Mei, Xu Kai-Yan, Guo Zheng, Zhao Hong-Quan, Mao Yu-Liang. Electrical conductivity of germanium selenide nanosheets in oxygen and butane. Acta Physica Sinica,
2021, 70(17): 178502.
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Zhao Yi, Li Jun-Kang, Zheng Ze-Jie. Progress of the study on carrier scattering mechanisms of silicon/germanium field effect transistors. Acta Physica Sinica,
2019, 68(16): 167301.
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Wang Qian, Liu Wei-Guo, Gong Lei, Wang Li-Guo, Li Ya-Qing. Determination of carrier bulk lifetime and surface recombination velocity in semiconductor from double-wavelength free carrier absorption. Acta Physica Sinica,
2018, 67(21): 217201.
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Sun Wei-Feng, Li Mei-Cheng, Zhao Lian-Cheng. First-principles investigation of carrier Auger lifetime and impact ionization rate in narrow-gap superlattices. Acta Physica Sinica,
2010, 59(8): 5661-5666.
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Fang Jian, Lin Wei, Zhou Xian-Da, Li Zhao-Ji. A WKB solution of excess carriers in conductivity modulation base with non-uniform lifetime. Acta Physica Sinica,
2006, 55(7): 3360-3362.
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2002, 51(1): 111-114.
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1992, 41(8): 1338-1344.
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WANG DE-HE. ATOMIC CORRELATIONS IN AMORPHOUS Si AND Ge AND STRUCTURAL MODEL. Acta Physica Sinica,
1992, 41(5): 792-797.
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Xu Zhen-jia, Chen Yu-zhang, Jiang De-sheng, Song Chun-ying, Li He-cheng, Song Xiang-fang, Ye Yi-ying. INFRARED ABSORPTION OF OXYGEN IN SILICON AND GERMANIUM AT LOW TEMPERATURES. Acta Physica Sinica,
1980, 29(7): 867-877.
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WANG WEI-YUAN. MEASUREMENT OF CARRIER LIFETIME OF GaAs DIODES WITH p-n AND M-S JUNCTIONS BY STEP RECOVERY METHOD. Acta Physica Sinica,
1979, 28(3): 341-349.
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FUNG SI-CHI, LOG BIN-CHANG, TON FU-DI, CHANG YEN-SING, HONG FU-GUN, TAM HOA-YEN. MEASUREMENTS OF RESISTIVITY AND HALL EFFECT IN SILICON CARBIDE BY THE VAN DER PAUW METHOD. Acta Physica Sinica,
1966, 22(9): 967-975.
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1966, 22(9): 976-981.
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HUNG GIAN. THE MEASUREMENT OF EXCESS CARRIERS LIFE-TIME IN SEMICONDUCTORS BY PHOTOCONDUCTIVE PHASESHIFT OF SPREADING RESISTANCE UNDER A POINT CONTACT. Acta Physica Sinica,
1966, 22(4): 385-403.
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LING SHU-LEN, HUANG CHAANG, SHU BIENG-HUA. MEASUREMENT OF THE IMPURITY DISTRIBUTION OF DIFFUSED LAYERS IN SILICON BY THE FOUR-POINT PROBE AND THE ANODIC OXIDATION TECHNIQUE. Acta Physica Sinica,
1964, 20(7): 643-653.
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SHAW NAN, LIU YI-HUAN. X-RAY MEASUREMENT OF THE THERMAL EXPANSION OF GERMANIUM, SILICON, INDIUM ANTIMONIDE AND GALLIUM ARSENIDE. Acta Physica Sinica,
1964, 20(8): 699-704.
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TANG PU-SHAN, HUO MING-HSIA, CHEN TSO-YU, WANG CHU. THE DIFFUSION LENGTH OF MINORITY CARRIERS IN N-TYPE SILICON MEASURED WITH A SURFACE BARRIER DETECTOR. Acta Physica Sinica,
1963, 19(7): 448-455.
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WANG SHOU-WU. THE MEASUREMENT OF THE LIFE TIME OF MINORITY CURRENT CARRIERS IN SEMICONDUCTORS BY OBSERVING THE PHOTO-CONDUCTIVE DECAY OF THE SPREADING RESISTANCE UNDER A POINT CONTACT. Acta Physica Sinica,
1963, 19(3): 176-190.
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WANG SHOU-WU. ON THE THEORY OF INJECTION OF MINORITY CARRIERS IN p-n ALLOY JUNCTIONS. Acta Physica Sinica,
1958, 14(1): 82-94.
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TANG TING-YUAN. EFFECT OF SURFACE RECOMBINATION ON THE PHOTOCONDUCTIVE SPECTRUM OF n-TYPE GERMANIUM (Ⅱ). Acta Physica Sinica,
1957, 13(5): 428-442.
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TANG TING-YUAN, KAO KUO-YU. EFFECT OF SURFACE RECOMBINATION ON THE PHOTOCONDUCTIVE SPECTRUM OF n-TYPE GERMANIUM (Ⅰ). Acta Physica Sinica,
1957, 13(5): 421-427.
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