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(1)四川固体电路研究所,重庆400060; (2)西安电子科技大学理学院 ,西安 71 0 0 71
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[1] Wang Chen, Xu Yi-Hong, Li Cheng, Lin Hai-Jun. Fabrication and characteristics of high performance SOI-based Ge PIN waveguide photodetector. Acta Physica Sinica, 2017, 66(19): 198502. doi: 10.7498/aps.66.198502 [2] Zhang Zhan-Gang, Lei Zhi-Feng, Yue Long, Liu Yuan, He Yu-Juan, Peng Chao, Shi Qian, Huang Yun, En Yun-Fei. Single event upset characteristics and physical mechanism for nanometric SOI SRAM induced by space energetic ions. Acta Physica Sinica, 2017, 66(24): 246102. doi: 10.7498/aps.66.246102 [3] Song Jian-Jun, Yang Chao, Zhu He, Zhang He-Ming, Xuan Rong-Xi, Hu Hui-Yong, Shu Bin. Structure design and frequency characteristics of SOI SiGe HBT. Acta Physica Sinica, 2014, 63(11): 118501. doi: 10.7498/aps.63.118501 [4] Ding Wei, Wu Wen-Wen, Wang Chi, Wu Zhi-Qiang. Propagation characteristics of seismic waves in shallow soil with the unsaturated three-phase poroelastic model. Acta Physica Sinica, 2014, 63(22): 224301. doi: 10.7498/aps.63.224301 [5] Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing. Two-dimensional analytical model of dual material gate strained Si SOI MOSFET with asymmetric Halo. Acta Physica Sinica, 2013, 62(15): 158502. doi: 10.7498/aps.62.158502 [6] Zhang Yue, Zhuo Qing-Qing, Liu Hong-Xia, Ma Xiao-Hua, Hao Yue. Flat-roof of dynamic equilibrium phenomenon in static negative biase temperature instability effect on power metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2013, 62(16): 167305. doi: 10.7498/aps.62.167305 [7] Chang Hu-Dong, Sun Bing, Lu Li, Zhao Wei, Wang Sheng-Kai, Wang Wen-Xin, Liu Hong-Gang. Study on high mobility In0.6Ga0.4As channel MOSHEMT and MOSFET. Acta Physica Sinica, 2012, 61(21): 217304. doi: 10.7498/aps.61.217304 [8] Yang Jin-Hui, Song Jun-Qiang. Saturation property of mean growth of initial error for chaos systems. Acta Physica Sinica, 2012, 61(17): 170511. doi: 10.7498/aps.61.170511 [9] Qiu Wei, Lü Pin, Ma Ying-Chi, Xu Xiao-Juan, Liu Dian, Zhang Cheng-Hua. The research on saturation of fast light in homogeneously broaden materials with gain. Acta Physica Sinica, 2012, 61(10): 104209. doi: 10.7498/aps.61.104209 [10] Cao Lei, Liu Hong-Xia. Study of the SOI MOSFET characteristics of high-k gate dielectric with quantum effect. Acta Physica Sinica, 2012, 61(24): 247303. doi: 10.7498/aps.61.247303 [11] Xiao Zhi-Qiang, Li Lei-Lei, Zhang Bo, Xu Jing, Chen Zheng-Cai. Total dose characteristics of single poly EEPROM and SONOS EEPROM on SOI. Acta Physica Sinica, 2011, 60(2): 028502. doi: 10.7498/aps.60.028502 [12] Qin Shan-Shan, Zhang He-Ming, Hu Hui-Yong, Qu Jiang-Tao, Wang Guan-Yu, Xiao Qing, Shu Yu. A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET. Acta Physica Sinica, 2011, 60(5): 058501. doi: 10.7498/aps.60.058501 [13] Bi Jin-Shun, Hai Chao-He, Han Zheng-Sheng. Study on power characteristics of deep sub-micron SOI RF LDMOS. Acta Physica Sinica, 2011, 60(1): 018501. doi: 10.7498/aps.60.018501 [14] Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo. Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectric. Acta Physica Sinica, 2010, 59(11): 8131-8136. doi: 10.7498/aps.59.8131 [15] Yu Yun, Hui Jun-Ying, Chen Yang, Sun Guo-Cang, Teng Chao. Research on target depth classification in low frequency acoustic field of shallow water. Acta Physica Sinica, 2009, 58(9): 6335-6343. doi: 10.7498/aps.58.6335 [16] Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong, Wang Jin. The impact of high-k dielectrics on the performance of Schottky barrier source/drain (SBSD) ultra-thin body (UTB) SOI MOSFET. Acta Physica Sinica, 2008, 57(7): 4476-4481. doi: 10.7498/aps.57.4476 [17] Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong. 2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectric. Acta Physica Sinica, 2008, 57(6): 3807-3812. doi: 10.7498/aps.57.3807 [18] Xu Chang-Fa, Yang Yin-Tang, Liu Li. . Acta Physica Sinica, 2002, 51(5): 1113-1117. doi: 10.7498/aps.51.1113 [19] LAI YUN-ZHONG, LI WEI-DONG, LIANG JIU-QING. ADIABATIC TRANSITION TRANSFER PHENOMENON OF ELECTRONS AND THE QUANTUM STATISTICAL PROPERTIES OF LIGHT FIELD IN A KERR MEDIUM. Acta Physica Sinica, 1998, 47(9): 1489-1497. doi: 10.7498/aps.47.1489 [20] . ОБ ИССЛЕДОВАНИИ СТАТИЧЕСКИХ ВОЛЬТАМПЕРНЫХ ХАРАКТЕРИСИК ТРАНЗИСТОРОВ В ОБЛАСТИ НАСЫЩЕНИЯ. Acta Physica Sinica, 1964, 20(6): 550-567. doi: 10.7498/aps.20.550
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22 December 2006
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