Single event upset characteristics and physical mechanism for nanometric SOI SRAM induced by space energetic ions

Zhang Zhan-Gang; Lei Zhi-Feng; Yue Long; Liu Yuan; He Yu-Juan; Peng Chao; Shi Qian; Huang Yun; En Yun-Fei

doi:10.7498/aps.66.246102

Abstract

Based on Monte-Carlo method, the characteristics and physical mechanisms for deposited-energy spectra in sensitive volume (SV), single event upset cross sections, and on-orbit error rates in 65-32 nm silicon-on-insulator static random access memory (SOI SRAM) devices induced by space energetic ions are investigated. Space ions on geostationary earth orbit exhibit a flux peak at an energy point of about 200 MeV/n. In consequence, the single event response of nanometric SOI SRAMs under 200 MeV/n heavy ions is studied in detail. The results show that 200 MeV/n space ions exhibit the large straggling of deposited-energy in the device SV with thickness ranging from 60 nm to 40 nm, which causes the single event upsets to occur in the sub-LETmth region. The device SV can only partially collect the electron-hole pairs in the single ion track with a wide distribution of secondary electrons. As a result, the maximum and average deposited-energy in the SV decrease by 25% and 33.3%, respectively. Further, the single event upset probability decreases and the on-orbit error rate decreases by about 80%. With the downscaling of feature size, the per-bit saturated cross sections and on-orbit error rates of nanometric SOI SRAM devices decrease dramatically. The phenomenon of constant-increasing single event upset cross section with higher ion linear energy transfer (LET) is not observed, owing to the fact that (a) the density of electron-hole pairs in the track of 200 MeV/n space ion is relatively low and (b) the SOI device has thin sensitive volume, which results in the fact that the secondary-electron effect cannot upset nearby sensitive cells. Besides, it is found that the direct-ionization process of trapped protons leads to an increase of on-orbit error rate of 65 nm SOI SRAM by one to two orders of magnitude.

Keywords:

Authors and contacts

1.
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China

Corresponding author: Zhang Zhan-Gang, zhangangzhang@163.com

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11505033), the Science and Technology Research Project of Guangdong, China (Grant Nos. 2015B090901048, 2017B090901068, 2015B090912002), and the Science and Technology Plan Project of Guangzhou, China (Grant No. 201707010186).

References

[1]	Dodd P E, Shaneyfelt M R, Schwank J R, Felix J A 2010 IEEE Trans. Nucl. Sci. 57 1747
[2]	Weller R A, Mendenhall M H, Reed R A, Schrimpf R D, Warren K M, Sierawski B D, Massengill L W 2010 IEEE Trans. Nucl. Sci. 57 1726
[3]	Reed R A, Weller R A, Schrimpf R D, Mendenhall M H, Warren K M, Massengill L W 2006 IEEE Trans. Nucl. Sci. 53 3356
[4]	Warren K M, Weller R A, Mendenhall M H, Reed R A, Ball D R, Howe C L, Olson B D, Alles M L, Massengill L W, Schrimpf R D, Haddad N F, Doyle S E, McMorrow D, Melinger J S, Lotshaw W T 2005 IEEE Trans. Nucl. Sci. 52 2125
[5]	Dodd P E, Schwank J R, Shaneyfelt M R, Ferlet-Cavrois V, Paillet P, Baggio J, Hash G L, Felix J A, Hirose K, Saito H 2007 IEEE Trans. Nucl. Sci. 54 889
[6]	Dodd P E, Schwank J R, Shaneyfelt M R, Felix J A, Paillet P, Ferlet-Cavrois V, Baggio J, Reed R A, Warren K M, Weller R A, Schrimpf R D, Hash G L, Dalton S M, Hirose K, Saito H 2007 IEEE Trans. Nucl. Sci. 54 2303
[7]	Ecoffet R, Duzellier S, Falguere D, Guibert L, Inguimbert C 1997 IEEE Trans. Nucl. Sci. 44 2230
[8]	Koga R, Crain S H, Crain W R, Crawford K B, Hansel S J 1998 IEEE Trans. Nucl. Sci. 45 2475
[9]	Liu M S, Liu H Y, Brewster N, Nelson D, Golke K W, Kirchner G, Hughes H L, Campbell A, Ziegler J F 2006 IEEE Trans. Nucl. Sci. 53 3487
[10]	Xapsos M A 1992 IEEE Trans. Nucl. Sci. 39 1613
[11]	Dodd P E, Musseau O, Shaneyfelt M R, Sexton F W, D'hose C, Hash G L, Martinez M, Loemker R A, Leray J L, Winokur P S 1998 IEEE Trans. Nucl. Sci. 45 2483
[12]	Reed R A, Weller R A, Mendenhall M H, Lauenstein J M, Warren K M, Pellish J A, Schrimpf R D, Sierawski B D, Massengill L W, Dodd P E, Shaneyfelt M R, Felix J A, Schwank J R, Haddad N F, Lawrence R K, Bowman J H, Conde R 2007 IEEE Trans. Nucl. Sci. 54 2312
[13]	Raine M, Gaillardin M, Sauvestre J E, Flament O, Bournel A, Aubry-Fortuna V 2010 IEEE Trans. Nucl. Sci. 57 1892
[14]	Zhang Z G, Liu J, Hou M D, Sun Y M, Zhao F Z Liu G, Han Z S, Geng C, Liu J D, Xi K, Duan J L, Yao H J, Mo D, Luo J, Gu S, Liu T Q 2013 Chin. Phys. B 22 096103
[15]	Raine M, Gaillardin M, Paillet P, Duhamel O, Girard S, Bournel A 2011 IEEE Trans. Nucl. Sci. 58 2664
[16]	Zhang Z G, Lei Z F, En Y F, Liu J 2016 Radiation Effects on Components & Systems Conference (RADECS) Bremen, Germany, September 19-23, 2016 pp1-4
[17]	Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R, Paillet P, Dodd P E 2003 IEEE Trans. Nucl. Sci. 50 522
[18]	Heidel D F, Marshall P W, LaBel K A, Schwank J R, Rodbell K P, Hakey M C, Berg M D, Dodd P E, Friendlich M R, Phan A D, Seidleck C M, Shaneyfelt M R, Xapsos M A 2008 IEEE Trans. Nucl. Sci. 55 3394
[19]	Fenouillet-Beranger C, Perreau P, Pham-Nguyen L, Denorme S, Andrieu F, Tosti L, Brevard L, Weber O, Barnola S, Salvetat T, Garros X, Casse M, Cassé M, Leroux C, Noel J P, Thomas O, Le-Gratiet B, Baron F, Gatefait M, Campidelli Y, Abbate F, Perrot C, de-Buttet C, Beneyton R, Pinzelli L, Leverd F, Gouraud P, Gros-Jean M, Bajolet A, Mezzomo C, Leyris C, Haendler S, Noblet D, Pantel R, Margain A, Borowiak C, Josse E, Planes N, Delprat D, Boedt F, Bourdelle K, Nguyen B Y, Boeuf F, Faynot O, Skotnicki T 2009 IEEE International Electron Devices Meeting (IEDM) Baltimore, USA, December 7-9, 2009 p1
[20]	Adams J H, Barghouty A F, Mendenhall M H, Reed R A, Sierawski B D, Warren K M, Watts J W, Weller R A 2012 IEEE Trans. Nucl. Sci. 59 3141
[21]	Tylka A J, Adams J H, Boberg P R, Brownstein B, Dietrich W F, Flueckiger E O, Petersen E L, Shea M A, Smart D F, Smith E C 1997 IEEE Trans. Nucl. Sci. 44 2150
[22]	Ziegler J F, Biersack J P, Littmark U 1985 The Stopping and Range of Ions in Solids (New York: Pergamon Press)
[23]	Pavlovic M, Strasik I 2007 Nucl. Instrum. Meth. Phys. Res. B 257 601
[24]	Raine M, Hubert G, Gaillardin M, Artola L, Paillet P, Girard S, Sauvestre J, Bournel A 2011 IEEE Trans. Nucl. Sci. 58 840

Cited By

[1]	Dodd P E, Shaneyfelt M R, Schwank J R, Felix J A 2010 IEEE Trans. Nucl. Sci. 57 1747
[2]	Weller R A, Mendenhall M H, Reed R A, Schrimpf R D, Warren K M, Sierawski B D, Massengill L W 2010 IEEE Trans. Nucl. Sci. 57 1726
[3]	Reed R A, Weller R A, Schrimpf R D, Mendenhall M H, Warren K M, Massengill L W 2006 IEEE Trans. Nucl. Sci. 53 3356
[4]	Warren K M, Weller R A, Mendenhall M H, Reed R A, Ball D R, Howe C L, Olson B D, Alles M L, Massengill L W, Schrimpf R D, Haddad N F, Doyle S E, McMorrow D, Melinger J S, Lotshaw W T 2005 IEEE Trans. Nucl. Sci. 52 2125
[5]	Dodd P E, Schwank J R, Shaneyfelt M R, Ferlet-Cavrois V, Paillet P, Baggio J, Hash G L, Felix J A, Hirose K, Saito H 2007 IEEE Trans. Nucl. Sci. 54 889
[6]	Dodd P E, Schwank J R, Shaneyfelt M R, Felix J A, Paillet P, Ferlet-Cavrois V, Baggio J, Reed R A, Warren K M, Weller R A, Schrimpf R D, Hash G L, Dalton S M, Hirose K, Saito H 2007 IEEE Trans. Nucl. Sci. 54 2303
[7]	Ecoffet R, Duzellier S, Falguere D, Guibert L, Inguimbert C 1997 IEEE Trans. Nucl. Sci. 44 2230
[8]	Koga R, Crain S H, Crain W R, Crawford K B, Hansel S J 1998 IEEE Trans. Nucl. Sci. 45 2475
[9]	Liu M S, Liu H Y, Brewster N, Nelson D, Golke K W, Kirchner G, Hughes H L, Campbell A, Ziegler J F 2006 IEEE Trans. Nucl. Sci. 53 3487
[10]	Xapsos M A 1992 IEEE Trans. Nucl. Sci. 39 1613
[11]	Dodd P E, Musseau O, Shaneyfelt M R, Sexton F W, D'hose C, Hash G L, Martinez M, Loemker R A, Leray J L, Winokur P S 1998 IEEE Trans. Nucl. Sci. 45 2483
[12]	Reed R A, Weller R A, Mendenhall M H, Lauenstein J M, Warren K M, Pellish J A, Schrimpf R D, Sierawski B D, Massengill L W, Dodd P E, Shaneyfelt M R, Felix J A, Schwank J R, Haddad N F, Lawrence R K, Bowman J H, Conde R 2007 IEEE Trans. Nucl. Sci. 54 2312
[13]	Raine M, Gaillardin M, Sauvestre J E, Flament O, Bournel A, Aubry-Fortuna V 2010 IEEE Trans. Nucl. Sci. 57 1892
[14]	Zhang Z G, Liu J, Hou M D, Sun Y M, Zhao F Z Liu G, Han Z S, Geng C, Liu J D, Xi K, Duan J L, Yao H J, Mo D, Luo J, Gu S, Liu T Q 2013 Chin. Phys. B 22 096103
[15]	Raine M, Gaillardin M, Paillet P, Duhamel O, Girard S, Bournel A 2011 IEEE Trans. Nucl. Sci. 58 2664
[16]	Zhang Z G, Lei Z F, En Y F, Liu J 2016 Radiation Effects on Components & Systems Conference (RADECS) Bremen, Germany, September 19-23, 2016 pp1-4
[17]	Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R, Paillet P, Dodd P E 2003 IEEE Trans. Nucl. Sci. 50 522
[18]	Heidel D F, Marshall P W, LaBel K A, Schwank J R, Rodbell K P, Hakey M C, Berg M D, Dodd P E, Friendlich M R, Phan A D, Seidleck C M, Shaneyfelt M R, Xapsos M A 2008 IEEE Trans. Nucl. Sci. 55 3394
[19]	Fenouillet-Beranger C, Perreau P, Pham-Nguyen L, Denorme S, Andrieu F, Tosti L, Brevard L, Weber O, Barnola S, Salvetat T, Garros X, Casse M, Cassé M, Leroux C, Noel J P, Thomas O, Le-Gratiet B, Baron F, Gatefait M, Campidelli Y, Abbate F, Perrot C, de-Buttet C, Beneyton R, Pinzelli L, Leverd F, Gouraud P, Gros-Jean M, Bajolet A, Mezzomo C, Leyris C, Haendler S, Noblet D, Pantel R, Margain A, Borowiak C, Josse E, Planes N, Delprat D, Boedt F, Bourdelle K, Nguyen B Y, Boeuf F, Faynot O, Skotnicki T 2009 IEEE International Electron Devices Meeting (IEDM) Baltimore, USA, December 7-9, 2009 p1
[20]	Adams J H, Barghouty A F, Mendenhall M H, Reed R A, Sierawski B D, Warren K M, Watts J W, Weller R A 2012 IEEE Trans. Nucl. Sci. 59 3141
[21]	Tylka A J, Adams J H, Boberg P R, Brownstein B, Dietrich W F, Flueckiger E O, Petersen E L, Shea M A, Smart D F, Smith E C 1997 IEEE Trans. Nucl. Sci. 44 2150
[22]	Ziegler J F, Biersack J P, Littmark U 1985 The Stopping and Range of Ions in Solids (New York: Pergamon Press)
[23]	Pavlovic M, Strasik I 2007 Nucl. Instrum. Meth. Phys. Res. B 257 601
[24]	Raine M, Hubert G, Gaillardin M, Artola L, Paillet P, Girard S, Sauvestre J, Bournel A 2011 IEEE Trans. Nucl. Sci. 58 840

[1]	Zhang Jian-Wei, Niu Ying, Yan Run-Qi, Zhang Rong-Qi, Cao Meng, Li Yong-Dong, Liu Chun-Liang, Zhang Jia-Wei. Analysis of effect of bulk vacancy defect on secondary electron emission characteristics of Al₂O₃. Acta Physica Sinica, 2024, 73(15): 157902. doi: 10.7498/aps.73.20240577
[2]	Li Peng-Fei, Yuan Hua, Cheng Zi-Dong, Qian Li-Bing, Liu Zhong-Lin, Jin Bo, Ha Shuai, Wan Cheng-Liang, Cui Ying, Ma Yue, Yang Zhi-Hu, Lu Di, Reinhold Schuch, Li Ming, Zhang Hong-Qiang, Chen Xi-Meng. Stable transmission of low energy electrons in glass tube with outer surface grounded conductively shielding. Acta Physica Sinica, 2022, 71(7): 074101. doi: 10.7498/aps.71.20212036
[3]	Li Hua-Mei, Hou Peng-Fei, Wang Jin-Bin, Song Hong-Jia, Zhong Xiang-Li. Single-event-upset effect simulation of HfO₂-based ferroelectric field effect transistor read and write circuits. Acta Physica Sinica, 2020, 69(9): 098502. doi: 10.7498/aps.69.20200123
[4]	Zhang Zhan-Gang, Lei Zhi-Feng, Tong Teng, Li Xiao-Hui, Wang Song-Lin, Liang Tian-Jiao, Xi Kai, Peng Chao, He Yu-Juan, Huang Yun, En Yun-Fei. Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices. Acta Physica Sinica, 2020, 69(5): 056101. doi: 10.7498/aps.69.20191209
[5]	Wang Shuo, Chang Yong-Wei, Chen Jing, Wang Ben-Yan, He Wei-Wei, Ge Hao. Total ionizing dose effects on innovative silicon-on-insulator static random access memory cell. Acta Physica Sinica, 2019, 68(16): 168501. doi: 10.7498/aps.68.20190405
[6]	Peng Chao^1\2, En Yun-Fei, Li Bin, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Huang Yun. Radiation induced parasitic effect in silicon-on-insulator metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2018, 67(21): 216102. doi: 10.7498/aps.67.20181372
[7]	Li Yu-Kun, Chen Tao, Li Jin, Yang Zhi-Wen, Hu Xin, Deng Ke-Li, Cao Zhu-Rong. Calculation of CsI photocathode spectral response in 10-100 keV X-ray energy region. Acta Physica Sinica, 2018, 67(8): 085203. doi: 10.7498/aps.67.20180029
[8]	Zhou Hang, Zheng Qi-Wen, Cui Jiang-Wei, Yu Xue-Feng, Guo Qi, Ren Di-Yuan, Yu De-Zhao, Su Dan-Dan. Enhanced channel hot carrier effect of 0.13 m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect. Acta Physica Sinica, 2016, 65(9): 096104. doi: 10.7498/aps.65.096104
[9]	Luo Yin-Hong, Guo Xiao-Qiang, Chen Wei, Guo Gang, Fan Hui. Energy and angular dependence of single event upsets in ESA SEU Monitor. Acta Physica Sinica, 2016, 65(20): 206103. doi: 10.7498/aps.65.206103
[10]	Luo Yin-Hong, Zhang Feng-Qi, Wang Yan-Ping, Wang Yuan-Ming, Guo Xiao-Qiang, Guo Hong-Xia. Single event upsets sensitivity of low energy proton in nanometer static random access memory. Acta Physica Sinica, 2016, 65(6): 068501. doi: 10.7498/aps.65.068501
[11]	Qin Chen, Yu Hui, Ye Qiao-Bo, Wei Huan, Jiang Xiao-Qing. An improved Mach-Zehnder acousto-optic modulator on a silicon-on-insulator platform. Acta Physica Sinica, 2016, 65(1): 014304. doi: 10.7498/aps.65.014304
[12]	Liu Yuan, Chen Hai-Bo, He Yu-Juan, Wang Xin, Yue Long, En Yun-Fei, Liu Mo-Han. Radiation effects on the low frequency noise in partially depleted silicon on insulator transistors. Acta Physica Sinica, 2015, 64(7): 078501. doi: 10.7498/aps.64.078501
[13]	Wang Xiao-Han, Guo Hong-Xia, Lei Zhi-Feng, Guo Gang, Zhang Ke-Ying, Gao Li-Juan, Zhang Zhan-Gang. Calculation of single event upset based on Monte Carlo and device simulations. Acta Physica Sinica, 2014, 63(19): 196102. doi: 10.7498/aps.63.196102
[14]	Shi Yan-Mei, Liu Ji-Zhi, Yao Su-Ying, Ding Yan-Hong, Zhang Wei-Hua, Dai Hong-Li. A dual-trench silicon on insulator high voltage device with an L-shaped source field plate. Acta Physica Sinica, 2014, 63(23): 237305. doi: 10.7498/aps.63.237305
[15]	Song Qing-Qing, Wang Xin-Bo, Cui Wan-Zhao, Wang Zhi-Yu, Ran Li-Xin. Probabilistic analysis of the lateral diffusion of secondary electrons in multicarrier multipactor. Acta Physica Sinica, 2014, 63(22): 220205. doi: 10.7498/aps.63.220205
[16]	Ding Li-Li, Guo Hong-Xia, Chen Wei, Yan Yi-Hua, Xiao Yao, Fan Ru-Yu. Simulation study of the influence of ionizing irradiation on the single event upset vulnerability of static random access memory. Acta Physica Sinica, 2013, 62(18): 188502. doi: 10.7498/aps.62.188502
[17]	Chang Tian-Hai, Zheng Jun-Rong. Monte-Carlo simulation of secondary electron emission from solid metal. Acta Physica Sinica, 2012, 61(24): 241401. doi: 10.7498/aps.61.241401
[18]	Duan Ping, Li Xi, E Peng, Qing Shao-Wei. Effect of magnetized secondary electron on the characteristics of sheath in Hall thruster. Acta Physica Sinica, 2011, 60(12): 125203. doi: 10.7498/aps.60.125203
[19]	Zhang Ke-Ying, Guo Hong-Xia, Luo Yin-Hong, He Bao-Ping, Yao Zhi-Bin, Zhang Feng-Qi, Wang Yuan-Ming. Three-dimensional numerial simulation of single event upset effects in static random access memory. Acta Physica Sinica, 2009, 58(12): 8651-8656. doi: 10.7498/aps.58.8651
[20]	Zhang Qing-Xiang, Hou Ming-Dong, Liu Jie, Wang Zhi-Guang, Jin Yun-Fan, Zhu Zhi-Yong, Sun You-Mei. The dependence of single event upset cross-section on incident angle. Acta Physica Sinica, 2004, 53(2): 566-570. doi: 10.7498/aps.53.566

Catalog

Vol. 66, Issue 24 - 2017-12-20

Metrics

Abstract views: 5766
PDF Downloads: 149
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板