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In this paper, we investigate the total ionizing dose (TID) effects of silicon-on-isolator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) with different sizes by using 60Co γ-ray. The SOI MOSFET contains a shallow trench isolation (STI) edge parasitic transistor and back gate parasitic transistor, in which STI oxide and buried oxide (BOX) are used as gate oxide, respectively. Although these parasitic effects are minimized by semiconductor device process, the radiation-induced trapped-charge can lead these parasitic effects to strengthen, thereby affecting the electrical characteristics of the main transistor. Since both the STI and BOX are sensitive to the TID effect, we try to distinguish their different influences on SOI devices in this work.The experimental results show that the characteristic degradation of device originates from the radiation-enhanced parasitic effect. The turning-on of the STI parasitic transistor leads the off-state leakage current to exponentially increase with total dose increasing until the off-state leakage reaches a saturation level. The threshold voltage shift observed in the narrow channel device results from the charge sharing in the STI, while the back gate coupling is a dominant contributor to the threshold voltage shift in short channel device. These results are explained by two simple models. The experimental data are consistent with the model calculation results. We can conclude that the smaller size device is more sensitive to TID effect in the same process.Furthermore, the influence of the negative bias at back gate and body on the radiation effect are also studied. The negative bias at back gate will partially neutralize the effect of positive trapped-charge in STI and that in BOX, thus suppressing the turning-on of STI parasitic transistor and the back gate coupling. The parasitic transistors share a common body region with the main transistor. So exerting body negative bias can increase the threshold voltage of the parasitic transistor, thereby restraining the TID effect. The experimental and simulation results show that the adjustment of the threshold voltage of parasitic transistor by body negative bias is limited due to the thin body region. The modulation of body negative bias in depletion region is more obvious in back gate parasitic transistor than in STI parasitic transistor. The weakening of parasitic conduction in the back channel is more noticeable than at STI sidewall under a body negative bias.
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Keywords:
- silicon-on-insulator /
- total ionizing dose effect /
- parasitic effect /
- experiment and simulation
[1] Rezzak N, Zhang E X, Alles M L, Schrimpf R D, Hughes H 2010 Proceedings of the IEEE International SOI Conference San Diego, USA, October 11-14, 2010 p1
[2] Simoen E, Gaillardin M, Paillet P, Reed R A, Schrimpf R D, Alles M L, El-Mamouni F, Fleetwood D M, Griffoni A, Claeys C 2013 IEEE Trans. Nucl. Sci. 60 1970
[3] Peng C, Hu Z, Ning B, Dai L, Bi D, Zhang Z 2015 Solid-State Electron. 106 81
[4] Schwank J R, Shaneyfelt M R, Dodd P E, Ferlet-Cavrois V, Loemker R A, Winokur P S, Fleetwood D M, Paillet P, Leray J L, Draper B L, Witczak S C, Riewe L C 2000 IEEE Trans. Nucl. Sci. 47 2175
[5] Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 55 1833
[6] Rudra J K, Fowler W B 1987 Phys. Rev. B 35 8223
[7] Barnaby H J 2006 IEEE Trans. Nucl. Sci. 53 3103
[8] Gaillardin M, Paillet P, Ferlet-Cavrois V, Faynot O, Jahan C, Cristoloveanu S 2006 IEEE Trans. Nucl. Sci. 53 3158
[9] He B P, Ding L L, Yao Z B, Xiao Z G, Huang S Y, Wang Z J 2011 Acta Phys. Sin. 60 056105 (in Chinese)[何宝平, 丁李利, 姚志斌, 肖志刚, 黄绍燕, 王祖军 2011 物理学报 60 056105]
[10] Hu Z Y, Liu Z L, Shao H, Zhang Z X, Ning B X, Chen M, Bi D W, Zou S C 2011 Chin. Phys. B 20 120702
[11] Barnaby H J, McLain M, Esqueda I S 2007 Nucl. Instrum. Meth. Phys. Res. B 261 1142
[12] Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X, Zou S C 2011 Chin. Phys. B 20 120703
[13] Gaillardin M, Goiffon V, Marcandella C, Girard S, Martinez M, Paillet P, Magnan P, Estribeau M 2013 IEEE Trans. Nucl. Sci. 60 2623
[14] Liu Y, Chen H B, Liu Y R, Wang X, En Y F, Li B, Lu Y D 2015 Chin. Phys. B 24 088503
[15] Gaillardin M, Paillet P, Ferlet-Cavrois V, Cristoloveanu S, Faynot O, Jahan C 2006 Appl. Phys. Lett. 88 223511
[16] Peng L, Zhuo Q Q, Liu H X, Cai H M 2012 Acta Phys. Sin. 61 240703 (in Chinese)[彭里, 卓青青, 刘红侠, 蔡惠民 2012 物理学报 61 240703]
[17] Gaillardin M, Martinez M, Paillet P, Andrieu F, Girard S, Raine M, Marcandella C, Duhamel O, Richard N, Faynot O 2013 IEEE Trans. Nucl. Sci. 60 2583
[18] Wolf S, Tauber R N 2002 Silicon Processing for the VLSI Era (Vol. 4) (California: Lattice Press) p674
[19] Niu G, Mathew S J, Banerjee G, Cressler J D, Clark S D, Palmer M J, Subbanna S 1999 IEEE Trans. Nucl. Sci. 46 1841
[20] Muller R S, Kamins T I, Chan M, Ko P K 1986 Device Electronics for Integrated Circuits (New York: John Wiley & Sons) p54
[21] Synopsys 2013 Sentaurus Device User Guide (Version H-201303) (Mountain View: Synopsys)
[22] Barnaby H J, McLain M L, Esqueda I S, Chen X J 2009 IEEE Tran. Circuits Syst. I 56 1870
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[1] Rezzak N, Zhang E X, Alles M L, Schrimpf R D, Hughes H 2010 Proceedings of the IEEE International SOI Conference San Diego, USA, October 11-14, 2010 p1
[2] Simoen E, Gaillardin M, Paillet P, Reed R A, Schrimpf R D, Alles M L, El-Mamouni F, Fleetwood D M, Griffoni A, Claeys C 2013 IEEE Trans. Nucl. Sci. 60 1970
[3] Peng C, Hu Z, Ning B, Dai L, Bi D, Zhang Z 2015 Solid-State Electron. 106 81
[4] Schwank J R, Shaneyfelt M R, Dodd P E, Ferlet-Cavrois V, Loemker R A, Winokur P S, Fleetwood D M, Paillet P, Leray J L, Draper B L, Witczak S C, Riewe L C 2000 IEEE Trans. Nucl. Sci. 47 2175
[5] Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 55 1833
[6] Rudra J K, Fowler W B 1987 Phys. Rev. B 35 8223
[7] Barnaby H J 2006 IEEE Trans. Nucl. Sci. 53 3103
[8] Gaillardin M, Paillet P, Ferlet-Cavrois V, Faynot O, Jahan C, Cristoloveanu S 2006 IEEE Trans. Nucl. Sci. 53 3158
[9] He B P, Ding L L, Yao Z B, Xiao Z G, Huang S Y, Wang Z J 2011 Acta Phys. Sin. 60 056105 (in Chinese)[何宝平, 丁李利, 姚志斌, 肖志刚, 黄绍燕, 王祖军 2011 物理学报 60 056105]
[10] Hu Z Y, Liu Z L, Shao H, Zhang Z X, Ning B X, Chen M, Bi D W, Zou S C 2011 Chin. Phys. B 20 120702
[11] Barnaby H J, McLain M, Esqueda I S 2007 Nucl. Instrum. Meth. Phys. Res. B 261 1142
[12] Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X, Zou S C 2011 Chin. Phys. B 20 120703
[13] Gaillardin M, Goiffon V, Marcandella C, Girard S, Martinez M, Paillet P, Magnan P, Estribeau M 2013 IEEE Trans. Nucl. Sci. 60 2623
[14] Liu Y, Chen H B, Liu Y R, Wang X, En Y F, Li B, Lu Y D 2015 Chin. Phys. B 24 088503
[15] Gaillardin M, Paillet P, Ferlet-Cavrois V, Cristoloveanu S, Faynot O, Jahan C 2006 Appl. Phys. Lett. 88 223511
[16] Peng L, Zhuo Q Q, Liu H X, Cai H M 2012 Acta Phys. Sin. 61 240703 (in Chinese)[彭里, 卓青青, 刘红侠, 蔡惠民 2012 物理学报 61 240703]
[17] Gaillardin M, Martinez M, Paillet P, Andrieu F, Girard S, Raine M, Marcandella C, Duhamel O, Richard N, Faynot O 2013 IEEE Trans. Nucl. Sci. 60 2583
[18] Wolf S, Tauber R N 2002 Silicon Processing for the VLSI Era (Vol. 4) (California: Lattice Press) p674
[19] Niu G, Mathew S J, Banerjee G, Cressler J D, Clark S D, Palmer M J, Subbanna S 1999 IEEE Trans. Nucl. Sci. 46 1841
[20] Muller R S, Kamins T I, Chan M, Ko P K 1986 Device Electronics for Integrated Circuits (New York: John Wiley & Sons) p54
[21] Synopsys 2013 Sentaurus Device User Guide (Version H-201303) (Mountain View: Synopsys)
[22] Barnaby H J, McLain M L, Esqueda I S, Chen X J 2009 IEEE Tran. Circuits Syst. I 56 1870
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