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Li Ji-Fang, Guo Hong-Xia, Ma Wu-Ying, Song Hong-Jia, Zhong Xiang-Li, Li Yang-Fan, Bai Ru-Xue, Lu Xiao-Jie, Zhang Feng-Qi. Total X-ray dose effect on graphene field effect transistor. Acta Physica Sinica,
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Huang Xin-Yu, Zhang Jin-Xin, Wang Xin, Lü Ling, Guo Hong-Xia, Feng Juan, Yan Yun-Yi, Wang Hui, Qi Jun-Xiang. Numerical simulation of single-particle transients in low-noise amplifiers based on silicon-germanium heterojunction bipolar transistors and inverse-mode structures. Acta Physica Sinica,
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Zhang Jin-Xin, Wang Xin, Guo Hong-Xia, Feng Juan, Lü Ling, Li Pei, Yan Yun-Yi, Wu Xian-Xiang, Wang Hui. Three-dimensional simulation of total ionizing dose effect on SiGe heterojunction bipolor transistor. Acta Physica Sinica,
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Zhu Hai-Long, Li Xue-Ying, Tong Hong-Hui. Three-dimensional numerical simulation of physical field distribution of radio frequency thermal plasma. Acta Physica Sinica,
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Chen Rui, Liang Ya-Nan, Han Jian-Wei, Wang Xuan, Yang Han, Chen Qian, Yuan Run-Jie, Ma Ying-Qi, Shangguan Shi-Peng. Single event effect and total dose effect of GaN high electron mobility transistor using heavy ions and gamma rays. Acta Physica Sinica,
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Li Shun, Song Yu, Zhou Hang, Dai Gang, Zhang Jian. Statistical characteristics of total ionizing dose effects of bipolar transistors. Acta Physica Sinica,
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Qin Li, Guo Hong-Xia, Zhang Feng-Qi, Sheng Jiang-Kun, Ouyang Xiao-Ping, Zhong Xiang-Li, Ding Li-Li, Luo Yin-Hong, Zhang Yang, Ju An-An. Total ionizing dose effect of ferroelectric random access memory under Co-60 gamma rays and electrons. Acta Physica Sinica,
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Peng Chao1\2, En Yun-Fei, Li Bin, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Huang Yun. Radiation induced parasitic effect in silicon-on-insulator metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
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Zhou Hang, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Ren Di-Yuan, Yu Xue-Feng. Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment. Acta Physica Sinica,
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Li Pei, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Wang Xin, Zhang Jin-Xin. Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor. Acta Physica Sinica,
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Wang Xin, Lu Wu, Wu Xue, Ma Wu-Ying, Cui Jiang-Wei, Liu Mo-Han, Jiang Ke. Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor. Acta Physica Sinica,
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Zhang Jin-Xin, He Chao-Hui, Guo Hong-Xia, Tang Du, Xiong Cen, Li Pei, Wang Xin. Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor. Acta Physica Sinica,
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Zhuo Qing-Qing, Liu Hong-Xia, Peng Li, Yang Zhao-Nian, Cai Hui-Min. Mechanism of three kink effects in irradiated partially-depleted SOINMOSFET's. Acta Physica Sinica,
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Zhuo Qing-Qing, Liu Hong-Xia, Wang Zhi. Single event effect of 3D H-gate SOI NMOS devices in total dose ionizing. Acta Physica Sinica,
doi: 10.7498/aps.62.176106
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Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong. Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates. Acta Physica Sinica,
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Zhang Jin-Xin, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Xi Shan-Bin, Wang Xin, Deng Wei. 3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistor. Acta Physica Sinica,
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Zhou Xin-Jie, Li Lei-Lei, Zhou Yi, Luo Jing, Yu Zong-Guang. Back-gate bias effect on partially depleted SOI/MOS back-gate performances under radiation condition. Acta Physica Sinica,
doi: 10.7498/aps.61.206102
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Li Ming, Yu Xue-Feng, Xue Yao-Guo, Lu Jian, Cui Jiang-Wei, Gao Bo. Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory. Acta Physica Sinica,
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Zhu Chang-Sheng, Feng Li, Wang Zhi-Ping, Xiao Rong-Zhen. Numerical simulation of three-dimensional dendritic growth using phase-field method. Acta Physica Sinica,
doi: 10.7498/aps.58.8055
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Zhang Ke-Ying, Guo Hong-Xia, Luo Yin-Hong, He Bao-Ping, Yao Zhi-Bin, Zhang Feng-Qi, Wang Yuan-Ming. Three-dimensional numerial simulation of single event upset effects in static random access memory. Acta Physica Sinica,
doi: 10.7498/aps.58.8651
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