[1] |
Zhang Zhan-Gang, Yang Shao-Hua, Lin Qian, Lei Zhi-Feng, Peng Chao, He Yu-Juan. Experimental study on real-time measurement of single-event effects of 14 nm FinFET and 28 nm planar CMOS SRAMs based on Qinghai-Tibet Plateau. Acta Physica Sinica,
2023, 72(14): 146101.
doi: 10.7498/aps.72.20230161
|
[2] |
Liu Ye, Guo Hong-Xia, Ju An-An, Zhang Feng-Qi, Pan Xiao-Yu, Zhang Hong, Gu Zhao-Qiao, Liu Yi-Tian, Feng Ya-Hui. Data inversion and erroneous annealing of floating gate cell under proton radiation. Acta Physica Sinica,
2022, 71(11): 118501.
doi: 10.7498/aps.71.20212405
|
[3] |
Zhang Jin-Xin, Wang Xin, Guo Hong-Xia, Feng Juan, Lü Ling, Li Pei, Yan Yun-Yi, Wu Xian-Xiang, Wang Hui. Three-dimensional simulation of total ionizing dose effect on SiGe heterojunction bipolor transistor. Acta Physica Sinica,
2022, 71(5): 058502.
doi: 10.7498/aps.71.20211795
|
[4] |
Pan Wen-Tao, Wen Lin, Li Shan-Shan, Pan Zhen-Hai. Numerical study of asymmetric breakup behavior of bubbles in Y-shaped branching microchannels. Acta Physica Sinica,
2022, 71(2): 024701.
doi: 10.7498/aps.71.20210832
|
[5] |
. 3D Simulation Study on the Mechanism of Influence Factor of Total Dose Ionizing Effect on SiGe HBT. Acta Physica Sinica,
2021, (): .
doi: 10.7498/aps.70.20211795
|
[6] |
Zhu Hai-Long, Li Xue-Ying, Tong Hong-Hui. Three-dimensional numerical simulation of physical field distribution of radio frequency thermal plasma. Acta Physica Sinica,
2021, 70(15): 155202.
doi: 10.7498/aps.70.20202135
|
[7] |
. Numerical study on the asymmetric breakup behavior of bubbles in Y-shaped branching microchannels. Acta Physica Sinica,
2021, (): .
doi: 10.7498/aps.70.20210832
|
[8] |
Zhang Zhan-Gang, Ye Bing, Ji Qing-Gang, Guo Jin-Long, Xi Kai, Lei Zhi-Feng, Huang Yun, Peng Chao, He Yu-Juan, Liu Jie, Du Guang-Hua. Mechanisms of alpha particle induced soft errors in nanoscale static random access memories. Acta Physica Sinica,
2020, 69(13): 136103.
doi: 10.7498/aps.69.20201796
|
[9] |
Luo Yin-Hong, Zhang Feng-Qi, Guo Hong-Xia, Wojtek Hajdas. Prediction of proton single event upset sensitivity based on heavy ion test data in nanometer hardened static random access memory. Acta Physica Sinica,
2020, 69(1): 018501.
doi: 10.7498/aps.69.20190878
|
[10] |
Wang Xun, Zhang Feng-Qi, Chen Wei, Guo Xiao-Qiang, Ding Li-Li, Luo Yin-Hong. Experimental study on neutron single event effects of commercial SRAMs based on CSNS. Acta Physica Sinica,
2020, 69(16): 162901.
doi: 10.7498/aps.69.20200265
|
[11] |
Zhang Zhan-Gang, Lei Zhi-Feng, Tong Teng, Li Xiao-Hui, Wang Song-Lin, Liang Tian-Jiao, Xi Kai, Peng Chao, He Yu-Juan, Huang Yun, En Yun-Fei. Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices. Acta Physica Sinica,
2020, 69(5): 056101.
doi: 10.7498/aps.69.20191209
|
[12] |
Li Hua-Mei, Hou Peng-Fei, Wang Jin-Bin, Song Hong-Jia, Zhong Xiang-Li. Single-event-upset effect simulation of HfO2-based ferroelectric field effect transistor read and write circuits. Acta Physica Sinica,
2020, 69(9): 098502.
doi: 10.7498/aps.69.20200123
|
[13] |
Zhang Zhan-Gang, Lei Zhi-Feng, Yue Long, Liu Yuan, He Yu-Juan, Peng Chao, Shi Qian, Huang Yun, En Yun-Fei. Single event upset characteristics and physical mechanism for nanometric SOI SRAM induced by space energetic ions. Acta Physica Sinica,
2017, 66(24): 246102.
doi: 10.7498/aps.66.246102
|
[14] |
Luo Yin-Hong, Guo Xiao-Qiang, Chen Wei, Guo Gang, Fan Hui. Energy and angular dependence of single event upsets in ESA SEU Monitor. Acta Physica Sinica,
2016, 65(20): 206103.
doi: 10.7498/aps.65.206103
|
[15] |
Luo Yin-Hong, Zhang Feng-Qi, Wang Yan-Ping, Wang Yuan-Ming, Guo Xiao-Qiang, Guo Hong-Xia. Single event upsets sensitivity of low energy proton in nanometer static random access memory. Acta Physica Sinica,
2016, 65(6): 068501.
doi: 10.7498/aps.65.068501
|
[16] |
Wang Xiao-Han, Guo Hong-Xia, Lei Zhi-Feng, Guo Gang, Zhang Ke-Ying, Gao Li-Juan, Zhang Zhan-Gang. Calculation of single event upset based on Monte Carlo and device simulations. Acta Physica Sinica,
2014, 63(19): 196102.
doi: 10.7498/aps.63.196102
|
[17] |
Ding Li-Li, Guo Hong-Xia, Chen Wei, Yan Yi-Hua, Xiao Yao, Fan Ru-Yu. Simulation study of the influence of ionizing irradiation on the single event upset vulnerability of static random access memory. Acta Physica Sinica,
2013, 62(18): 188502.
doi: 10.7498/aps.62.188502
|
[18] |
Liu La-Qun, Liu Da-Gang, Wang Xue-Qiong, Zou Wen-Kang, Yang Chao. The implementation of the three-dimensional numerical simulation of the coaxial magnetically insulated transmission line with helical inductor. Acta Physica Sinica,
2012, 61(16): 162901.
doi: 10.7498/aps.61.162901
|
[19] |
Zhu Chang-Sheng, Feng Li, Wang Zhi-Ping, Xiao Rong-Zhen. Numerical simulation of three-dimensional dendritic growth using phase-field method. Acta Physica Sinica,
2009, 58(11): 8055-8061.
doi: 10.7498/aps.58.8055
|
[20] |
Zhang Qing-Xiang, Hou Ming-Dong, Liu Jie, Wang Zhi-Guang, Jin Yun-Fan, Zhu Zhi-Yong, Sun You-Mei. The dependence of single event upset cross-section on incident angle. Acta Physica Sinica,
2004, 53(2): 566-570.
doi: 10.7498/aps.53.566
|