| [1] |
Zhang Zhan-Gang, Yang Shao-Hua, Lin Qian, Lei Zhi-Feng, Peng Chao, He Yu-Juan. Experimental study on real-time measurement of single-event effects of 14 nm FinFET and 28 nm planar CMOS SRAMs based on Qinghai-Tibet Plateau. Acta Physica Sinica,
2023, 72(14): 146101.
doi: 10.7498/aps.72.20230161
|
| [2] |
Jiang Xin-Shuai, Luo Yin-Hong, Zhao Wen, Zhang Feng-Qi, Wang Tan. Influences of well contact on multiple-cell upsets in 28 nm SRAM. Acta Physica Sinica,
2023, 72(3): 036101.
doi: 10.7498/aps.72.20221742
|
| [3] |
Liu Ye, Guo Hong-Xia, Ju An-An, Zhang Feng-Qi, Pan Xiao-Yu, Zhang Hong, Gu Zhao-Qiao, Liu Yi-Tian, Feng Ya-Hui. Data inversion and erroneous annealing of floating gate cell under proton radiation. Acta Physica Sinica,
2022, 71(11): 118501.
doi: 10.7498/aps.71.20212405
|
| [4] |
. Mechanisms of Alpha Particle Induced Soft Errors in Nanoscale Static Random Access Memories. Acta Physica Sinica,
2020, (): 006100.
doi: 10.7498/aps.69.20191796
|
| [5] |
Zhang Zhan-Gang, Ye Bing, Ji Qing-Gang, Guo Jin-Long, Xi Kai, Lei Zhi-Feng, Huang Yun, Peng Chao, He Yu-Juan, Liu Jie, Du Guang-Hua. Mechanisms of alpha particle induced soft errors in nanoscale static random access memories. Acta Physica Sinica,
2020, 69(13): 136103.
doi: 10.7498/aps.69.20201796
|
| [6] |
Luo Yin-Hong, Zhang Feng-Qi, Guo Hong-Xia, Wojtek Hajdas. Prediction of proton single event upset sensitivity based on heavy ion test data in nanometer hardened static random access memory. Acta Physica Sinica,
2020, 69(1): 018501.
doi: 10.7498/aps.69.20190878
|
| [7] |
Wang Xun, Zhang Feng-Qi, Chen Wei, Guo Xiao-Qiang, Ding Li-Li, Luo Yin-Hong. Experimental study on neutron single event effects of commercial SRAMs based on CSNS. Acta Physica Sinica,
2020, 69(16): 162901.
doi: 10.7498/aps.69.20200265
|
| [8] |
Li Hua-Mei, Hou Peng-Fei, Wang Jin-Bin, Song Hong-Jia, Zhong Xiang-Li. Single-event-upset effect simulation of HfO2-based ferroelectric field effect transistor read and write circuits. Acta Physica Sinica,
2020, 69(9): 098502.
doi: 10.7498/aps.69.20200123
|
| [9] |
Zhang Zhan-Gang, Lei Zhi-Feng, Tong Teng, Li Xiao-Hui, Wang Song-Lin, Liang Tian-Jiao, Xi Kai, Peng Chao, He Yu-Juan, Huang Yun, En Yun-Fei. Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices. Acta Physica Sinica,
2020, 69(5): 056101.
doi: 10.7498/aps.69.20191209
|
| [10] |
Zhang Zhan-Gang, Lei Zhi-Feng, Yue Long, Liu Yuan, He Yu-Juan, Peng Chao, Shi Qian, Huang Yun, En Yun-Fei. Single event upset characteristics and physical mechanism for nanometric SOI SRAM induced by space energetic ions. Acta Physica Sinica,
2017, 66(24): 246102.
doi: 10.7498/aps.66.246102
|
| [11] |
Luo Yin-Hong, Zhang Feng-Qi, Wang Yan-Ping, Wang Yuan-Ming, Guo Xiao-Qiang, Guo Hong-Xia. Single event upsets sensitivity of low energy proton in nanometer static random access memory. Acta Physica Sinica,
2016, 65(6): 068501.
doi: 10.7498/aps.65.068501
|
| [12] |
Luo Yin-Hong, Guo Xiao-Qiang, Chen Wei, Guo Gang, Fan Hui. Energy and angular dependence of single event upsets in ESA SEU Monitor. Acta Physica Sinica,
2016, 65(20): 206103.
doi: 10.7498/aps.65.206103
|
| [13] |
Luo Yin-Hong, Zhang Feng-Qi, Guo Hong-Xia, Guo Xiao-Qiang, Zhao Wen, Ding Li-Li, Wang Yuan-Ming. Angular dependence of proton single event multiple-cell upsets in nanometer SRAM. Acta Physica Sinica,
2015, 64(21): 216103.
doi: 10.7498/aps.64.216103
|
| [14] |
Xiao Yao, Guo Hong-Xia, Zhang Feng-Qi, Zhao Wen, Wang Yan-Ping, Ding Li-Li, Fan Xue, Luo Yin-Hong, Zhang Ke-Ying. Synergistic effects of total ionizing dose on the single event effect sensitivity of static random access memory. Acta Physica Sinica,
2014, 63(1): 018501.
doi: 10.7498/aps.63.018501
|
| [15] |
Wang Xiao-Han, Guo Hong-Xia, Lei Zhi-Feng, Guo Gang, Zhang Ke-Ying, Gao Li-Juan, Zhang Zhan-Gang. Calculation of single event upset based on Monte Carlo and device simulations. Acta Physica Sinica,
2014, 63(19): 196102.
doi: 10.7498/aps.63.196102
|
| [16] |
Chen Rui, Yu Yong-Tao, Shangguan Shi-Peng, Feng Guo-Qiang, Han Jian-Wei. Mechanism of multiple bit upsets induced by localized latch-up effect in 90 nm complementary metal semiconductor static random-access memory. Acta Physica Sinica,
2014, 63(12): 128501.
doi: 10.7498/aps.63.128501
|
| [17] |
Ding Li-Li, Guo Hong-Xia, Chen Wei, Yan Yi-Hua, Xiao Yao, Fan Ru-Yu. Simulation study of the influence of ionizing irradiation on the single event upset vulnerability of static random access memory. Acta Physica Sinica,
2013, 62(18): 188502.
doi: 10.7498/aps.62.188502
|
| [18] |
Zhang Ke-Ying, Guo Hong-Xia, Luo Yin-Hong, He Bao-Ping, Yao Zhi-Bin, Zhang Feng-Qi, Wang Yuan-Ming. Three-dimensional numerial simulation of single event upset effects in static random access memory. Acta Physica Sinica,
2009, 58(12): 8651-8656.
doi: 10.7498/aps.58.8651
|
| [19] |
Peng Zi-Long, Han Xiu-Feng, Zhao Su-Fen, Wei Hong-Xiang, Du Guan-Xiang, Zhan Wen-Shan. Perpendicular current-driven magnetization switching in free layer of magnetic tunneling junctions and MRAM. Acta Physica Sinica,
2006, 55(2): 860-864.
doi: 10.7498/aps.55.860
|
| [20] |
Li Hua. Monte Carlo simulation of the SRAM single event upset. Acta Physica Sinica,
2006, 55(7): 3540-3545.
doi: 10.7498/aps.55.3540
|
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