Single event effect of 3D H-gate SOI NMOS devices in total dose ionizing

Zhuo Qing-Qing; Liu Hong-Xia; Wang Zhi

doi:10.7498/aps.62.176106

Abstract

The single event effect of H-gate SOI NMOS devices in total dose ionizing are studied by means of numerical simulation. By analyzing the mobility degradation in the simulation process, the corrected mobility Lombardi model due to degradation at interfaces is obtained. As the simulated transfer characteristic curves of SOI transistor agree well with the experimental data, the single event effect of H-gate SOI NMOS devices in total dose ionizing is simulated by this corrected model. Results shows that the maximum drain currents of devices under the same conditions are slight increasing, but the transistors get a significant increase in the drain collected charge with increasing total dose level.

Keywords:

Authors and contacts

1.
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Ministry of Education, School of Microelectronics, Xidian, University, Xi’an 710071, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076097, 60936005), and the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 200110203110012).

References

[1]	Dodd P E 2005 IEEE Trans. Dev. Mater. Rel. 5 343
[2]	Dodd P E, Massengill L W 2003 IEEE Trans. Nucl. Sci. 50 583
[3]	Tao W, Li C, Dinh A Bhuva B 2009 IEEE Trans. Nucl. Sci. 56 3556
[4]	Gouker P, Brandt J, Wyatt P, Tyrrell B, Soares A, Knecht J, Keast C, McMorrow D, Narasimham B, Gadlage M, Bhuva B 2008 IEEE Trans. Nucl. Sci. 55 2854
[5]	Gadlage M J, Gouker P, Bhuva B L, Narasimham B, Schrimpf R D 2009 IEEE Trans. Nucl. Sci. 56 3483
[6]	Kobayashi D, Saito H, Hirose K 2007 IEEE Trans. Nucl. Sci. 54 1037
[7]	Zhuo Q Q, Liu H X, Hao Y 2012 ActaPhys. Sin. 61 218502 (in Chinese) [卓青青, 刘红侠, 郝跃 2012 物理学报 61 218502]
[8]	Liu Z, Chen S, Liang B, Liu B W, Zhao Z Y 2010 ActaPhys. Sin. 58 649 (in Chinese) [刘征, 陈书明, 梁斌, 刘必慰, 赵振宇 2010 物理学报 58 649]
[9]	Sentaurus Device User Guide 2010 Synopsys Inc.

Cited By

[1]	Dodd P E 2005 IEEE Trans. Dev. Mater. Rel. 5 343
[2]	Dodd P E, Massengill L W 2003 IEEE Trans. Nucl. Sci. 50 583
[3]	Tao W, Li C, Dinh A Bhuva B 2009 IEEE Trans. Nucl. Sci. 56 3556
[4]	Gouker P, Brandt J, Wyatt P, Tyrrell B, Soares A, Knecht J, Keast C, McMorrow D, Narasimham B, Gadlage M, Bhuva B 2008 IEEE Trans. Nucl. Sci. 55 2854
[5]	Gadlage M J, Gouker P, Bhuva B L, Narasimham B, Schrimpf R D 2009 IEEE Trans. Nucl. Sci. 56 3483
[6]	Kobayashi D, Saito H, Hirose K 2007 IEEE Trans. Nucl. Sci. 54 1037
[7]	Zhuo Q Q, Liu H X, Hao Y 2012 ActaPhys. Sin. 61 218502 (in Chinese) [卓青青, 刘红侠, 郝跃 2012 物理学报 61 218502]
[8]	Liu Z, Chen S, Liang B, Liu B W, Zhao Z Y 2010 ActaPhys. Sin. 58 649 (in Chinese) [刘征, 陈书明, 梁斌, 刘必慰, 赵振宇 2010 物理学报 58 649]
[9]	Sentaurus Device User Guide 2010 Synopsys Inc.

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Catalog

Vol. 62, Issue 17 - 2013-09-05

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