Test methods of total dose effects in verylarge scale integrated circuits

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Abstract
A kind of test method of total dose effects (TDE) is presented for very large scale integrated circuits (VLSI). The consumption current of devices is measured while function parameters of devices (or circuits) are measured. Then the relation between data errors and consumption current can be analyzed and mechanism of TDE in VLSI can be proposed. Experimental results of 60Co γ TDEs are given for SRAMs, EEPROMs, FLASH ROMs and a kind of CPU.

Keywords:
test method /

total dose effects /

very large scale integrated circuits
Authors and contacts
He Chao-Hui,

Geng Bin,

He Bao-Ping,

Yao Yu-Juan,

Li Yong-Hong,

Peng Hong-Lun,

Lin Dong-Sheng,

Zhou Hui,

Chen Yu-Sheng

1.
西北核技术研究所，西安69信箱13分箱，西安 710024
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