Total X-ray dose effect on graphene field effect transistor

Li Ji-Fang; Guo Hong-Xia; Ma Wu-Ying; Song Hong-Jia; Zhong Xiang-Li; Li Yang-Fan; Bai Ru-Xue; Lu Xiao-Jie; Zhang Feng-Qi

doi:10.7498/aps.73.20231829

Abstract

In this paper, the total dose effects of graphene field-effect transistors (GFETs) with different structures and sizes are studied. The irradiation experiments are carried out by using the 10-keV X-ray irradiation platform with a dose rate of 200 rad(Si)/s. Positive gate bias (V_G = +1 V, V_D= V_S= 0 V) is used during irradiation. Using a semiconductor parameter analyzer, the transfer characteristic curves of top-gate GFET and back-gate GFET are obtained before and after irradiation. At the same time, the degradation condition of the dirac voltage V_Dirac and the carrier mobility μ are extracted from the transfer characteristic curve. The experimental results demonstrate that V_Dirac and carrier mobility μ degrade with dose increasing. The depletion of V_Dirac and carrier mobility μ are caused by the oxide trap charge generated in the gate oxygen layer during X-ray irradiation. Compared with the back-gate GFETs, the top-gate GFETs show more severely degrade V_Dirac and carrier mobility, therefore top-gate GFET is more sensitive to X-ray radiation at the same cumulative dose than back-gate GFET. The analysis shows that the degradation of top-gate GFET is mainly caused by the oxide trap charge. And in contrast to top-gate GFET, oxygen adsorption contributes to the irradiation process of back-gate GFET, which somewhat mitigates the effect of radiation damage. Furthermore, a comparison of electrical property deterioration of GFETs of varying sizes between the pre-irradiation and the post-irradiation is made. The back-gate GFET, which has a size of 50 μm×50 μm, and the top-gate GFET, which has a size of 200 μm×200 μm, are damaged most seriously. In the case of the top-gate GFET, the larger the radiation area, the more the generated oxide trap charges are and the more serious the damage. In contrast, the back-gate GFET has a larger oxygen adsorption area during irradiation and a more noticeable oxygen adsorption effect, which partially offsets the damage produced by irradiation. Finally, the oxide trap charge mechanism is simulated by using TCAD simulation tool. The TCAD simulation reveals that the trap charge at the interface between Al₂O₃ and graphene is mainly responsible for the degradation of top-gate GFET property, significantly affecting the investigation of the radiation effect and radiation reinforcement of GFETs.

Keywords:

Authors and contacts

1.
School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
2.
Northwest Institute of Nuclear Technology, Xi’an 710024, China

Corresponding author: Guo Hong-Xia, guohongxia@nint.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 12275230, 12027813).

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References

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666 Google Scholar
[2]	Dong H M, Duan Y F, Huang F, Liu J L 2018 Front. Phys. 13 137203 Google Scholar
[3]	Du S C, Lu W, Ali A, Zhao P, Shehzad K, Guo H W, Ma L L, Liu X M, Pi X D, Wang P, Fang H H, Xu Z, Gao C, Dan Y P, Tan P H, Wang H T, Lin C T, Yang J Y, Dong S R, Cheng Z Y, Li E P, Yin W Y, Luo J K, Yu B, Hasan T, Xu Y, Hu W D, Duan X F 2017 Adv. Mater. 29 1700463 Google Scholar
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[15]	Nouchi R, Saito T, Tanigaki K 2011 Appl. Phys. Express 4 035101 Google Scholar
[16]	Kang C G, Lee Y G, Lee S K, Park E, Cho C, Lim S K, Hwang H J, Lee B H 2013 Carbon 53 182 Google Scholar
[17]	Xiao M, Qiu C, Zhang Z, Peng L M 2017 ACS Appl. Mater. Interfaces 9 34050 Google Scholar
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[23]	Zhu M G, Zhou J S, Sun P K, Peng L M, Zhang Z Y 2021 ACS Appl. Mater. Interfaces 13 47756 Google Scholar
[24]	Kanhaiya P S, Yu A, Netzer R, Kemp W, Doyle D, Shulaker M M 2021 ACS Nano 15 17310 Google Scholar
[25]	舒焕 2023 硕士学位论文 (北京: 北方工业大学) Shu H 2023 M. S. Thesis (Beijing: North China University of Technology
[26]	Stará V, Procházka P, Mareček D, Šikola T, Čechal J 2018 Nanoscale 10 17520 Google Scholar
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[28]	Oldham T R, McLean F B 2003 IEEE Trans. Nucl. Sci. 50 483 Google Scholar
[29]	Ismail M A, Zaini K M M, Syono M I 2019 TELKOMNIKA Telecommun. Comput. Electron. Control 17 1845 Google Scholar

Cited By

图 1 器件结构示意图　(a)顶栅型GFET; (b)背栅型GFET

Figure 1. Device structure diagram: (a) Top-gate GFET; (b) back-gate GFET.

DownLoad: Full-Size Img PowerPoint

图 2 辐照前后顶栅型GFET的转移特性曲线和输出特性曲线

Figure 2. Transfer characteristic curve and output characteristic curve of top-gate GFET before and after irradiation.

DownLoad: Full-Size Img PowerPoint

图 3 V_Dirac随辐射累积剂量的变化趋势　(a) 顶栅型GFET; (b) 背栅型GFET

Figure 3. The variations of V_Dirac with cumulative dose: (a) Top-gate GFET; (b) back-gate GFET.

DownLoad: Full-Size Img PowerPoint

图 4 载流子迁移率随辐射累积剂量的变化趋势　(a)顶栅型GFET; (b)背栅型GFET

Figure 4. The variations of μ with cumulative dose: (a) Top-gate GFET; (b) back-gate GFET.

DownLoad: Full-Size Img PowerPoint

图 5 辐照前后转移特性曲线的变化趋势　(a)顶栅型GFET; (b)背栅型GFET

Figure 5. Transfer characteristic curve of GFET before and after irradiation: (a) Top-gate GFET; (b) back-gate GFET.

DownLoad: Full-Size Img PowerPoint

图 6 固定不同数目的陷阱缺陷的转移特性曲线

Figure 6. Transfer characteristic curve after fixing different number of trap defects.

DownLoad: Full-Size Img PowerPoint

表 1 样品信息及偏置条件

Table 1. Sample information and bias conditions.

器件结构	器件尺寸	偏置条件
顶栅型GFET	50 μm×50 μm	正栅极偏置 (V_G = +1 V, V_D = V_S= 0 V)
	100 μm×100 μm
	200 μm×200 μm
背栅型GFET	50 μm×50 μm	正栅极偏置 (V_G = +1 V, V_D = V_S= 0 V)
	100 μm×100 μm
	200 μm×200 μm

DownLoad: CSV

表 2 辐照前后不同尺寸GFET的V_Dirac偏移量ΔV_Dirac和载流子迁移率偏移量Δμ

Table 2. V_Dirac offsets ΔV_Diracand carrier mobility offsets Δμ of GFETs of different sizes before and after irradiation.

尺寸	顶栅型GFET			背栅型GFET
尺寸	ΔV_Dirac/V	Δμ_h/(cm^–2·V^–1·s^–1)	Δμ_e/(cm^–2·V^–1·s^–1)	ΔV_Dirac/V	Δμ_h/(cm^–2·V^–1·s^–1)	Δμ_e/(cm^–2·V^–1·s^–1)
50 μm×50 μm	2.05	194.2	168.1	0.46	133.3	324.0
100 μm×100 μm	2.18	78.3	98.5	0.07	26.1	252.1
200 μm×200 μm	2.68	243.5	40.6	0.24	69.6	92.8

DownLoad: CSV

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666 Google Scholar
[2]	Dong H M, Duan Y F, Huang F, Liu J L 2018 Front. Phys. 13 137203 Google Scholar
[3]	Du S C, Lu W, Ali A, Zhao P, Shehzad K, Guo H W, Ma L L, Liu X M, Pi X D, Wang P, Fang H H, Xu Z, Gao C, Dan Y P, Tan P H, Wang H T, Lin C T, Yang J Y, Dong S R, Cheng Z Y, Li E P, Yin W Y, Luo J K, Yu B, Hasan T, Xu Y, Hu W D, Duan X F 2017 Adv. Mater. 29 1700463 Google Scholar
[4]	Bo X J, Zhou M, Guo L P 2017 Biosens. Bioelectron. 89 167 Google Scholar
[5]	Cui M C, Zhong X L, Fang Y, Sheng H X, Guo T T, Guo Y 2021 Int. J. RF Microw. C. E. 31 e22723 Google Scholar
[6]	马武英, 陆妩, 郭旗, 何承发, 吴雪, 王信, 丛忠超, 汪波, 玛丽娅 2014 物理学报 63 026101 Google Scholar Ma W Y, Lu W, Guo Q, He C F, Wu X, Wang X, Cong Z C, Wang B, Maria 2014 Acta Phys. Sin. 63 026101 Google Scholar
[7]	董世剑, 郭红霞, 马武英, 吕玲, 潘霄宇, 雷志锋, 岳少忠, 郝蕊静, 琚安安, 钟向丽, 欧阳晓平 2020 物理学报 69 078501 Google Scholar Dong S J, Guo H X, Ma W Y, Lv L, Pan X Y, Lei Z F, Yue S Z, Hao R J, Ju A A, Zhong X L, Ouyang X P 2020 Acta Phys. Sin. 69 078501 Google Scholar
[8]	Procházka P, Mareček D, Lišková Z, Čechal J, Šikola T 2017 Sci. Rep. 7 563 Google Scholar
[9]	Jain S, Gajarushi A S, Gupta A, Rao V R 2020 IEEE Sens. J. 20 2938 Google Scholar
[10]	Zhang Y F, Peng S Y, Wang Y H, Guo L X, Zhang X Y, Huang H Q, Su S H, Wang X W, Xue J M 2022 J. Phys. Chem. Lett. 13 10722 Google Scholar
[11]	冯婷婷 2014 博士学位论文 (北京: 清华大学) Feng T T 2014 Ph. D. Dissertation (Beijing: Tsinghua University
[12]	Iqbal M W, Hussain G, Kamran M A, Aslam I, Alharbi T, Azam S, Majid A, Razzaq S 2019 Microelectron. Eng. 216 111044 Google Scholar
[13]	LaGasse S W, Cress C D, Hughes H L, Lee J U 2017 IEEE Trans. Nucl. Sci. 64 156 Google Scholar
[14]	Hafsi B, Boubaker A, Ismaïl N, Kalboussi A, Lmimouni K 2015 J. Korean Phys. Soc. 67 1201 Google Scholar
[15]	Nouchi R, Saito T, Tanigaki K 2011 Appl. Phys. Express 4 035101 Google Scholar
[16]	Kang C G, Lee Y G, Lee S K, Park E, Cho C, Lim S K, Hwang H J, Lee B H 2013 Carbon 53 182 Google Scholar
[17]	Xiao M, Qiu C, Zhang Z, Peng L M 2017 ACS Appl. Mater. Interfaces 9 34050 Google Scholar
[18]	Esqueda I, Cress C, Anderson T, Ahlbin J, Bajura M, Fritze M, Moon J S 2013 Electronics 2 234 Google Scholar
[19]	Giubileo F, Di Bartolomeo A, Martucciello N, Romeo F, Iemmo L, Romano P, Passacantando M 2016 Nanomaterials 6 206 Google Scholar
[20]	Kumar S, Kumar A, Tripathi A, Tyagi C, Avasthi D K 2018 J. Appl. Phys. 123 161533 Google Scholar
[21]	Fan L J, Bi J S, Xi K, Yang X Q, Xu Y N, Ji L L 2021 IEEE Sens. J. 21 16100 Google Scholar
[22]	Zhang E X, Newaz A K M, Wang B, Bhandaru S, Zhang C X, Fleetwood D M, Bolotin K I, Pantelides S T, Alles M L, Schrimpf R D, Weiss S M, Reed R A, Weller R A 2011 IEEE Trans. Nucl. Sci. 58 2961 Google Scholar
[23]	Zhu M G, Zhou J S, Sun P K, Peng L M, Zhang Z Y 2021 ACS Appl. Mater. Interfaces 13 47756 Google Scholar
[24]	Kanhaiya P S, Yu A, Netzer R, Kemp W, Doyle D, Shulaker M M 2021 ACS Nano 15 17310 Google Scholar
[25]	舒焕 2023 硕士学位论文 (北京: 北方工业大学) Shu H 2023 M. S. Thesis (Beijing: North China University of Technology
[26]	Stará V, Procházka P, Mareček D, Šikola T, Čechal J 2018 Nanoscale 10 17520 Google Scholar
[27]	An H, Li D, Yang S, Wen X, Zhang C, Cao Z, Wang J 2021 Sensors 21 7753 Google Scholar
[28]	Oldham T R, McLean F B 2003 IEEE Trans. Nucl. Sci. 50 483 Google Scholar
[29]	Ismail M A, Zaini K M M, Syono M I 2019 TELKOMNIKA Telecommun. Comput. Electron. Control 17 1845 Google Scholar

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