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To further improve the understanding of the patterns and mechanisms of total ionizing dose (TID) radiation damage in carbon nanotube field-effect transistor (CNTFET), this study investigates the total dose effects of 10 keV X-ray irradiation on N-type and P-type CNTFETs. The irradiation dose rate was 200 rad(Si)/s, with cumulative doses of 100 krad(Si) for N-type devices and 90 krad(Si) for P-type devices. This paper explores the differences in TID effects between N-type and P-type CNTFETs under floating gate bias and on-state bias conditions, as well as the impact of irradiation on the hysteresis characteristics of N-type CNTFETs and the influence of channel sizes on the TID effects of N-type CNTFETs.The results indicate that both types of transistors exhibit threshold voltage shift, transconductance degradation, an increase in subthreshold swing, and a decrease in saturation current after irradiation. During the irradiation process, N-type devices under floating gate bias suffered more severe damage than those under on-state bias, while P-type devices under on-state bias experienced more significant damage than those under floating gate bias. The hysteresis width of N-type devices decreased after irradiation, and the TID damage became more severe with increasing channel dimensions.The primary cause of device parameter degradation is the trap charges generated during irradiation. The gate bias applied during irradiation affects the capture of electrons or holes by traps in the gate dielectric, resulting in different radiation damage characteristics for different types of devices. The reduction in the hysteresis width of N-type devices after irradiation may be attributed to the negatively charged trap charges generated during irradiation, which hinder the capture of electrons by water molecules, OH groups, and traps in the gate dielectric. Moreover, the channel dimensions of the transistors also influence their radiation response: larger channel dimensions result in more trap charges being generated in the gate dielectric and at the interface during irradiation, leading to more severe transistor damage.
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