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Xiao Shi-Liang, Wang Zhao-Hui, Wu Hong-Yi, Chen Xiong-Jun, Sun Qi, Tan Bo-Yu, Wang Hao, Qi Fu-Gang. Spectral analysis techniques in measuring neutron-induced gamma production cross-section. Acta Physica Sinica,
2024, 73(7): 072901.
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Zhang Zhan-Gang, Yang Shao-Hua, Lin Qian, Lei Zhi-Feng, Peng Chao, He Yu-Juan. Experimental study on real-time measurement of single-event effects of 14 nm FinFET and 28 nm planar CMOS SRAMs based on Qinghai-Tibet Plateau. Acta Physica Sinica,
2023, 72(14): 146101.
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Zhang Shu-Hao, Yuan Zhang-Yi-An, Qiao Ming, Zhang Bo. Simulation study on radiation hardness for total ionizing dose effect of ultra-thin shielding layer 300 V SOI LDMOS. Acta Physica Sinica,
2022, 71(10): 107301.
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. 3D Simulation Study on the Mechanism of Influence Factor of Total Dose Ionizing Effect on SiGe HBT. Acta Physica Sinica,
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Chen Rui, Liang Ya-Nan, Han Jian-Wei, Wang Xuan, Yang Han, Chen Qian, Yuan Run-Jie, Ma Ying-Qi, Shangguan Shi-Peng. Single event effect and total dose effect of GaN high electron mobility transistor using heavy ions and gamma rays. Acta Physica Sinica,
2021, 70(11): 116102.
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Zhang Zhan-Gang, Lei Zhi-Feng, Tong Teng, Li Xiao-Hui, Wang Song-Lin, Liang Tian-Jiao, Xi Kai, Peng Chao, He Yu-Juan, Huang Yun, En Yun-Fei. Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices. Acta Physica Sinica,
2020, 69(5): 056101.
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Zhuo Qing-Qing, Liu Hong-Xia, Wang Zhi. Single event effect of 3D H-gate SOI NMOS devices in total dose ionizing. Acta Physica Sinica,
2013, 62(17): 176106.
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Zhuo Qing-Qing, Liu Hong-Xia, Peng Li, Yang Zhao-Nian, Cai Hui-Min. Mechanism of three kink effects in irradiated partially-depleted SOINMOSFET's. Acta Physica Sinica,
2013, 62(3): 036105.
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Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui. Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica,
2013, 62(11): 117103.
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Li Ming, Yu Xue-Feng, Xue Yao-Guo, Lu Jian, Cui Jiang-Wei, Gao Bo. Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory. Acta Physica Sinica,
2012, 61(10): 106103.
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Hu Zhi-Yuan, Liu Zhang-Li, Shao Hua, Zhang Zheng-Xuan, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang. The influence of channel length on total ionizing dose effect in deep submicron technologies. Acta Physica Sinica,
2012, 61(5): 050702.
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Shang Huai-Chao, Liu Hong-Xia, Zhuo Qing-Qing. Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rate. Acta Physica Sinica,
2012, 61(24): 246101.
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Wang Yi-Yuan, Lu Wu, Ren Di-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa, Gao Bo. Degradation and dose rate effects of bipolar linearregulator on ionizing radiation. Acta Physica Sinica,
2011, 60(9): 096104.
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Li Xiao-Ling, Lin Shi-Yao, Hu Li-Qun, Xu Ping, Duan Yan-Min, Mao Song-Tao, Zhang Ji-Zhong, Wang Xiang-Qi, Zhong Guo-Qiang. Study of neutron radiation behavior for RF heating on HT-7. Acta Physica Sinica,
2011, 60(1): 012901.
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Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang. Total ionizing dose effect of 0.18 m nMOSFETs. Acta Physica Sinica,
2011, 60(11): 116103.
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Xiao Zhi-Qiang, Li Lei-Lei, Zhang Bo, Xu Jing, Chen Zheng-Cai. Total dose characteristics of single poly EEPROM and SONOS EEPROM on SOI. Acta Physica Sinica,
2011, 60(2): 028502.
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Wang Si-Hao, Lu Qing, Wang Wen-Hua, An Xia, Huang Ru. The improvement on total ionizing dose (TID) effects of the ultra-deep submicron MOSFET featuring delta doping profiles. Acta Physica Sinica,
2010, 59(3): 1970-1976.
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Wang Zu-Jun, Tang Ben-Qi, Xiao Zhi-Gang, Liu Min-Bo, Huang Shao-Yan, Zhang Yong. Experimental analysis of charge transfer efficiency degradation of charge coupled devices induced by proton irradiation. Acta Physica Sinica,
2010, 59(6): 4136-4142.
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He Bao-Ping, Chen Wei, Wang Gui-Zhen. A comparison of ionizing radiation damage in CMOS devices from 60Co Gamma rays, electrons and protons. Acta Physica Sinica,
2006, 55(7): 3546-3551.
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He Chao-Hui, Geng Bin, Yang Hai-Liang, Chen Xiao-Hua, Wang Yan-Ping, Li Guo-Zheng. Experimental study on irradiation effects in floating gate ROMs. Acta Physica Sinica,
2003, 52(1): 180-187.
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