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大面阵、高分辨率碲镉汞红外焦平面阵列图像传感器可用于航天遥感、高精度卫星成像等领域，我国下一代气象卫星将全部应用此类图像传感器。然而，空间高能质子会对碲镉汞红外焦平面阵列探测器造成位移损伤效应，同时亦会在其像素单元金属氧化物半导体(MOS)管引入电离总剂量效应。本文以近年来广泛应用于图像传感器的55nm制造工艺碲镉汞红外焦平面阵列图像传感器为对象，基于超大面阵设计时所用的2×2基本像素单元，构建了Geant4仿真模型。并且进行了不同质子入射注量下的仿真研究。获得了不同注量下的位移损伤情况，包括非电离能量损失、离位原子数等。结果表明，空间高能质子累积注量为1013cm-2时，除了考虑碲镉汞红外焦平面阵列图像传感器位移损伤效应外，亦需关注其像素单元MOS管电离总剂量效应。与此同时，结合仿真结果对其空间应用环境中的损伤情况进行了初步评估。该研究可为未来超大面阵碲镉汞红外焦平面阵列图像传感器空间应用提供关键数据支撑。A large-format, high-resolution Hg1-xCdxTe infrared focal plane array (IRFPA) image sensor can be used in aerospace remote sensing and high-precision satellite imaging. The next generation of meteorological satellites in China will fully adopt this type of image sensor. However, space high-energy protons can cause displacement damage effects in Hg1-xCdxTe IRFPA detectors and induce total ionizing dose (TID) effects in the pixel unit metal-oxide-semiconductor (MOS) transistors. This paper focuses on a 55nm manufacturing process Hg1-xCdxTe IRFPA sensor widely used in image sensors, using a 2×2 basic pixel unit model for large-format arrays and constructing a Geant4 simulation model. Simulations were conducted for different proton irradiation fluences, including 1010, 1011, 1012 and 1013 cm-2. The results show the displacement damage under various fluences, including non-ionizing energy loss and displacement atom distribution and others. It was found that, at a proton cumulative fluence of 1013 cm-2, in addition to considering the displacement damage effect in the Hg1-xCdxTe IRFPA sensor, attention must also be paid to the TID effects on the MOS transistors in the pixel units. Additionally, the study provides a preliminary assessment of the damage conditions in the space environment based on simulation results. This research provides crucial data support for the space applications of future large-format Hg1-xCdxTe IRFPA image sensors.
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Keywords:
- Hg1-xCdxTe /
- infrared focal plane /
- proton /
- Geant4 /
- displacement damage /
- total ionizing dose
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