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基于SiGe合金的电子器件具有广阔的空间应用前景, 但是也受到空间环境中粒子辐照损伤的威胁. 本文通过蒙特卡罗模拟研究了1—1000 MeV质子对SiGe合金和SiGe/Si异质结构造成的位移损伤. 结果表明, 低能质子(1—100 MeV)在SiGe合金中主要通过库仑散射和弹性碰撞产生Si初级离位原子(primary knock-on atom, PKA)和Ge PKA, 损伤能分布在质子射程末端形成一个明显的布拉格峰, 而高能质子(300—1000 MeV)在SiGe合金中的非弹性碰撞更加显著, 出现更多的PKA类型, 损伤能主要分布在质子射程前端. 同时, 质子在SiGe/Si异质结构中的损伤能随质子能量的增大呈现出整体下降的趋势, 反向入射质子(10 MeV和100 MeV)比正向入射质子在界面处Si基底一侧产生的损伤能更大, 导致界面两侧的损伤能起伏更为剧烈, 可能造成更加严重的位移损伤. 此外, Ge含量会影响质子在SiGe合金中的PKA类型、损伤能分布和非电离能量损失, 随着Ge含量的增大, 高能质子在SiGe合金中的非电离能量损失逐渐变大, 但是, Ge含量对质子在小尺寸SiGe/Si异质结构中总损伤能的影响不显著. 总体上, 这项工作说明了质子在SiGe合金和SiGe/Si异质结构中产生的位移损伤和质子能量密切相关, 低能质子倾向于产生更多的自反冲原子, 并在小尺寸SiGe/Si异质结构中产生位移损伤, 为SiGe合金基电子器件的位移损伤效应研究和抗辐照加固技术提供了数据支持.SiGe-based electronics have a promising prospect in the field of space exploration due to the controllable bandgap of SiGe alloys and high compatibility with Si technology. However, they may be susceptible to the influence of energetic particles in space radiation environments. In order to explain the potential displacement damage in SiGe-based electronics, Monte Carlo simulations are conducted to investigate the displacement damage in SiGe alloys and SiGe/Si heterostructures induced by 1–1000 MeV protons. The displacement damage in SiGe alloys is studied by the energy spectra and types of proton-induced primary knock-on atoms (PKAs) and the related damage energy distribution, while the displacement damage in SiGe/Si heterostructure is studied by the damage energy distribution caused by forward- and reverse-incident protons. Low-energy protons (1–100 MeV) are primarily generated by Si PKAs and Ge PKAs in SiGe alloys through Coulomb scattering and elastic collisions, and the corresponding damage energy distribution exhibits a distinct Bragg peak at the end of the proton range. Meanwhile, high-energy protons (300–1000 MeV) cause significant inelastic collisions in SiGe alloys, leading to a series of other PKA types, with the associated damage energy distribution predominantly located in the front of the proton range. In addition, the damage energy in SiGe/Si heterostructures generally decreases as the proton energy increases, and compared with the forward-incident protons, the reverse-incident protons (10 MeV and 100 MeV) cause greater damage energy on the side of Si substrate at the interface, and result in more noticeable fluctuations in damage energy on both sides of the interface, leading to severe displacement damage. Besides, Ge content can affect the PKA species, damage energy distribution, and nonionizing energy loss. As for high-energy protons, high Ge content may lead to a great nonionizing energy loss, whereas the Ge content has an insignificant effect on the total damage energy of small-size SiGe/Si heterostructures. In summary, this work indicates that the proton-induced displacement damage in SiGe alloys and SiGe/Si heterostructures is greatly dependent on the proton energy, and low-energy protons are prone to generating massive self-recoil atoms, inducing significant displacement damage in small-size SiGe/Si heterostructures, which will provide theoretical basis and reference for studying displacement damage effect and developing radiation hardening techniques of SiGe-based electronics.
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Keywords:
- SiGe /
- heterostructure /
- proton /
- displacement damage /
- Monte Carlo simulation
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图 1 质子入射靶材示意图(h为SiGe合金层的厚度) (a) SiGe合金; (b) SiGe/Si异质结构
Fig. 1. A schematic diagram of protons incident on the targets (h is the thickness of the SiGe layer): (a) SiGe alloy; (b) SiGe/Si heterostructure.
图 2 质子在Si, Ge和SiGe合金中的射程和非电离能量损失 (a)射程; (b)非电离能量损失; (c) 图(b)中区域1的局部放大图; (d) 图(b)中区域2的局部放大图
Fig. 2. Projected range and the NIEL of protons in Si, Ge, and SiGe alloys: (a) Projected range; (b) NIEL; (c) the mangified view of Zone 1 in panel (b); (d) the mangified view of Zone 2 in panel (b).
图 3 质子在SiGe合金中产生的PKA能谱和前6种PKA比例 (a) Si0.3Ge0.7的PKA能谱; (b) Si0.3Ge0.7的PKA比例; (c) Si0.5Ge0.5的PKA能谱; (d) Si0.5Ge0.5的PKA比例; (e) Si0.7Ge0.3的PKA能谱; (f) Si0.7Ge0.3的PKA比例
Fig. 3. Energy spectra of proton-induced PKAs and the proportion of top six types of PKAs in SiGe alloys: (a) PKA enegy spectra of Si0.3Ge0.7; (b) PKA proportions of Si0.3Ge0.7; (c) PKA enegy spectra of Si0.5Ge0.5; (d) PKA proportions of Si0.5Ge0.5; (e) PKA enegy spectra of Si0.7Ge0.3; (f) PKA proportions of Si0.7Ge0.3.
图 4 质子在SiGe合金中产生的损伤能随入射深度的分布 (a) 1 MeV质子; (b) 10 MeV质子; (c) 100 MeV质子; (d) 300 MeV质子; (e) 500 MeV质子; (f) 1000 MeV质子
Fig. 4. Distribution of damage energy in SiGe alloys produced by protons along the penetration depth: (a) 1 MeV proton; (b) 10 MeV proton; (c) 100 MeV proton; (d) 300 MeV proton; (e) 500 MeV proton; (f) 1000 MeV proton.
图 5 质子在SiGe合金中通过库仑散射产生的损伤能随入射深度的分布 (a) 1 MeV质子; (b) 10 MeV质子; (c) 100 MeV质子; (d) 300 MeV质子; (e) 500 MeV质子; (f) 1000 MeV质子
Fig. 5. Distribution of damage energy in SiGe alloys produced by protons via the Coulomb scattering along the penetration depth: (a) 1 MeV proton; (b) 10 MeV proton; (c) 100 MeV proton; (d) 300 MeV proton; (e) 500 MeV proton; (f) 1000 MeV proton.
图 6 质子在SiGe/Si异质结构中产生的损伤能随入射深度的分布 (a)质子正向入射Si0.3Ge0.7/Si; (b)质子反向入射Si0.3Ge0.7/Si; (c)质子正向入射Si0.5Ge0.5/Si; (d)质子反向入射Si0.5Ge0.5/Si; (e)质子正向入射Si0.7Ge0.3/Si; (f)质子反向入射Si0.7Ge0.3/Si
Fig. 6. Distribution of damage energy in SiGe/Si heterostructures produced by protons along the penetration depth: (a) Proton incident forward on Si0.3Ge0.7/Si; (b) proton incident reversely on Si0.3Ge0.7/Si; (c) proton incident forward on Si0.5Ge0.5/Si; (d) proton incident reversely on Si0.5Ge0.5/Si; (e) proton incident forward on Si0.7Ge0.3/Si; (f) proton incident reversely on Si0.7Ge0.3/Si.
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