Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

A study of linear and the second nonlinear admittance about the charge polarization around junction-boundaries in a quantum cavity structure

Zhao Xue-An He Jun-Hui

Citation:

A study of linear and the second nonlinear admittance about the charge polarization around junction-boundaries in a quantum cavity structure

Zhao Xue-An, He Jun-Hui
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

  • We present explicit expressions for the linear and the second nonlinear imaginary parts of admittanc (emittance) for the charge polarization of accumulation on both sides of the quantum dot (cavity) junctions by using Green function and the coupling parameters in an effective Hamiltonian and the discrete potential model. We found that the emittance and the electrochemical capacitance are equal to the geometric capacitance in the classical limit. In the nonclassical case the emittance is equal to the electrochemical capacitance, but not equal to the geometric capacitance if there is complete reflection. In the case where there is tunneling the emittance and electrochemical capacitance as well as the geometric capacitance are different. The results may be helpful for measurements on capacitance on small-scale structures.
Metrics
  • Abstract views:  5993
  • PDF Downloads:  466
  • Cited By: 0
Publishing process
  • Received Date:  25 April 2003
  • Accepted Date:  02 December 2003
  • Published Online:  05 February 2004

/

返回文章
返回