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2022, 71(24): 240701.
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Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang. Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode. Acta Physica Sinica,
2017, 66(15): 158501.
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Liu Zhan-Hui, Zhang Li-Li, Li Qing-Fang, Zhang Rong, Xiu Xiang-Qian, Xie Zi-Li, Shan Yun. InGaN/GaN blue light emitting diodes grown on Si(110) and Si(111) substrates. Acta Physica Sinica,
2014, 63(20): 207304.
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2013, 62(18): 180704.
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Liu Zhi, Li Ya-Ming, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming. Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate. Acta Physica Sinica,
2013, 62(7): 076108.
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Ji Chao, Zhang Ling-Yun, Dou Shuo-Xing, Wang Peng-Ye. A new method to deal with biomacromolecularimage observed by atomic force microscopy. Acta Physica Sinica,
2011, 60(9): 098703.
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Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di. Improved properties of light emitting diode by rough p-GaN grown at lower temperature. Acta Physica Sinica,
2010, 59(2): 1233-1236.
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Li Su-Mei, Song Shu-Mei, Lü Ying-Bo, Wang Ai-Fang, Wu Ai-Ling, Zheng Wei-Min. Photoluminescence study of quantum confined acceptors. Acta Physica Sinica,
2009, 58(7): 4936-4940.
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Xing Yan-Hui, Deng Jun, Han Jun, Li Jian-Jun, Shen Guang-Di. Investigation of n-type GaN deposited on sapphire substrate with different small misorientations. Acta Physica Sinica,
2009, 58(4): 2644-2648.
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Fan Kang-Qi, Jia Jian-Yuan, Zhu Ying-Min, Liu Xiao-Yuan. Dynamic model of atomic force microscopy in tapping-mode. Acta Physica Sinica,
2007, 56(11): 6345-6351.
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Ding Zhi-Bo, Wang Qi, Wang Kun, Wang Huan, Chen Tian-Xiang, Zhang Guo-Yi, Yao Shu-De. Determination of chemical composition and average crystal lattice constants of InGaN/GaN multiple quantum wells. Acta Physica Sinica,
2007, 56(5): 2873-2877.
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2007, 56(12): 7295-7299.
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Hu Hai-Long, Zhang Kun, Wang Zhen-Xing, Wang Xiao-Ping. Study of the transport properties of self-assembled alkanethiol monolayer by conduction atomic force microscopy. Acta Physica Sinica,
2006, 55(3): 1430-1434.
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Ou Gu-Ping, Song Zhen, Gui Wen-Ming, Zhang Fu-Jia. Surface analysis of LiBq4/ITO and LiBq4/CuPc/ITO using atomic force microscopy and x-ray photoelectron spectroscopy. Acta Physica Sinica,
2005, 54(12): 5717-5722.
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Xu Geng-Zhao, Liang Hu, Bai Yong-Qiang, Lau Kei-May, Zhu Xing. Study of temperature dependent electroluminescence of InGaN/GaN multiple quantum wells using low temperature scanning near-field optical microscopy. Acta Physica Sinica,
2005, 54(11): 5344-5349.
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Xu Bo, Yu Qing-Xuan, Wu Qi-Hong, Liao Yuan, Wang Guan-Zhong, Fang Rong-Chuan. Effects of strain and Mg-dopant on the photoluminescencespectra in p-type GaN. Acta Physica Sinica,
2004, 53(1): 204-209.
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Zhang Xiang-Jun, Meng Yong-Gang, Wen Shi-Zhu. On micro scanning forces under the coupling deformation of atomic force microscope probe. Acta Physica Sinica,
2004, 53(3): 728-733.
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Zhang Ji-Cai, Wang Jian-Feng, Wang Yu-Tian, Yang Hui. Effect of the ratio of TMIn flow to group Ⅲ flow on the properties of InGaN/GaN multiple quantum wells. Acta Physica Sinica,
2004, 53(8): 2467-2471.
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Song Shu-Fang, Zhou Sheng-Qiang, Chen Wei-De, Zhu Jian-Jun, Chen Chang-Yong, Xu Zhen-Jia. RBS/channeling study and photoluminscence properties of Er-implanted GaN. Acta Physica Sinica,
2003, 52(10): 2558-2562.
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Sun Run-Guang, Qi Hao, Zhang Jing. . Acta Physica Sinica,
2002, 51(6): 1203-1207.
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