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Gao Feng, Li Huan-Qing, Song Zhuo, Zhao Yu-Hong. The Evolution of Grain Boundary Dislocations in Graphene Induced by Strain: Three-Mode Phase-Field Crystal Method. Acta Physica Sinica,
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Zhang Bo-Jia, An Min-Rong, Hu Teng, Han La. Molecular dynamics simulation of mechanism of interaction between dislocation and amorphism in magnesium. Acta Physica Sinica,
2022, 71(14): 143101.
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Qi Ke-Wu, Zhao Yu-Hong, Tian Xiao-Lin, Peng Dun-Wei, Sun Yuan-Yang, Hou Hua. Phase field crystal simulation of effect of misorientation angle on low-angle asymmetric tilt grain boundary dislocation motion. Acta Physica Sinica,
2020, 69(14): 140504.
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Liu Si-Mian, Han Wei-Zhong. Mechanism of interaction between interface and radiation defects in metal. Acta Physica Sinica,
2019, 68(13): 137901.
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Qi Ke-Wu, Zhao Yu-Hong, Guo Hui-Jun, Tian Xiao-Lin, Hou Hua. Phase field crystal simulation of the effect of temperature on low-angle symmetric tilt grain boundary dislocation motion. Acta Physica Sinica,
2019, 68(17): 170504.
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Ma Da-Yan, Chen Nuo-Fu, Fu Rui, Liu Hu, Bai Yi-Ming, Mi Zhe, Chen Ji-Kun. Analyses of the effect of mismatch on the performance of inverted GaInP/InxGa1-xAs/InyGa1-yAs triple-junction solar cells. Acta Physica Sinica,
2017, 66(4): 048801.
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Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang. Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode. Acta Physica Sinica,
2017, 66(15): 158501.
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Du Hao, Ni Yu-Shan. Multiscale simulations and ductile-brittle analyses of the atomistic cracks in BCC Ta, Fe and W. Acta Physica Sinica,
2016, 65(19): 196201.
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Yang Jian-Qun, Ma Guo-Liang, Li Xing-Ji, Liu Chao-Ming, Liu Hai. Compressive behavior of nanocrystalline nickel at various temperatures and strain rates. Acta Physica Sinica,
2015, 64(13): 137103.
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Gao Ying-Jun, Qin He-Lin, Zhou Wen-Quan, Deng Qian-Qian, Luo Zhi-Rong, Huang Chuang-Gao. Phase field crystal simulation of grain boundary annihilation under strain strain at high temperature. Acta Physica Sinica,
2015, 64(10): 106105.
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Guo Rui-Hua, Lu Tai-Ping, Jia Zhi-Gang, Shang Lin, Zhang Hua, Wang Rong, Zhai Guang-Mei, Xu Bing-She. Effect of interface nucleation time of the GaN nucleation layer on the crystal quality of GaN film. Acta Physica Sinica,
2015, 64(12): 127305.
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Liu Zhan-Hui, Zhang Li-Li, Li Qing-Fang, Zhang Rong, Xiu Xiang-Qian, Xie Zi-Li, Shan Yun. InGaN/GaN blue light emitting diodes grown on Si(110) and Si(111) substrates. Acta Physica Sinica,
2014, 63(20): 207304.
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Lin Zhi-Yu, Zhang Jin-Cheng, Xu Sheng-Rui, Lü Ling, Liu Zi-Yang, Ma Jun-Cai, Xue Xiao-Yong, Xue Jun-Shuai, Hao Yue. TEM study of GaN films on vicinal sapphire (0001) substrates by MOCVD. Acta Physica Sinica,
2012, 61(18): 186103.
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Li Lian-He, Liu Guan-Ting. A screw dislocation interacting with a wedge-shaped crack in one-dimensional hexagonal quasicrystals. Acta Physica Sinica,
2012, 61(8): 086103.
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Xing Yan-Hui, Deng Jun, Han Jun, Li Jian-Jun, Shen Guang-Di. Improving the quantum well properties with n-type InGaN/GaN superlattices layer. Acta Physica Sinica,
2009, 58(1): 590-595.
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Xi Guang-Yi, Hao Zhi-Biao, Wang Lai, Li Hong-Tao, Jiang Yang, Zhao Wei, Ren Fan, Han Yan-Jun, Sun Chang-Zheng, Luo Yi. Dependence of GaN film sheet resistance on the N2 carrier gas percentage. Acta Physica Sinica,
2008, 57(11): 7233-7237.
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Ding Zhi-Bo, Wang Qi, Wang Kun, Wang Huan, Chen Tian-Xiang, Zhang Guo-Yi, Yao Shu-De. Determination of chemical composition and average crystal lattice constants of InGaN/GaN multiple quantum wells. Acta Physica Sinica,
2007, 56(5): 2873-2877.
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2007, 56(12): 7295-7299.
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Deng Xiao-Liang, Zhu Wen-Jun, He Hong-Liang, Wu Deng-Xue, Jing Fu-Qian. Initial dynamic behavior of nano-void growth in single-crystal copper under shock loading along 〈111〉 direction. Acta Physica Sinica,
2006, 55(9): 4767-4773.
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Xu Geng-Zhao, Liang Hu, Bai Yong-Qiang, Lau Kei-May, Zhu Xing. Study of temperature dependent electroluminescence of InGaN/GaN multiple quantum wells using low temperature scanning near-field optical microscopy. Acta Physica Sinica,
2005, 54(11): 5344-5349.
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