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Quality properties and internal defects of unintentionally doped GaN films grown on 0.3 vicinal sapphire (0001) substrates by MOCVD are investigated by TEM. The results show that plenty of dislocations in the GaN films prepared on vicinal sapphire substrates are annihilated in the areas with a distance of 0.8 m away from substrates, and that dislocations gather in the GaN films. Based on these phenomena, a mechanism for dislocation annihilation in the GaN film prepared on vicinal substrate is proposed, which is capable of explaining the fact that vicinal substrates are able to improve the qualities of GaN films.
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Keywords:
- GaN /
- vicinal substrate /
- TEM /
- dislocation
[1] Xu S R, Zhang J C, Li Z M, Zhou X W, Xu Z H, Zhao G C, Zhu Q W, Zhang J F, Mao W, Hao Y 2009 Acta Phys. Sin. 58 5705 (in Chinese) [许晟瑞, 张进城, 李志明, 周小伟, 许志豪, 赵广才, 朱庆伟, 张金凤, 毛维, 郝跃 2009 物理学报 58 5705]
[2] Xu S R, Hao Y, Zhang J C, Zhou X W, Cao Y R, Ou X X, Mao W, Du D C, Wang H 2010 Chin. Phys. B 19 107204
[3] Morkoc H, Strite S, Gao G B, Lin M E, Sverdlov B, Burns M 1994 J. Appl. Phys. 76 1363
[4] Nakamura S 1998 Science 281 956
[5] Park S E, Lim S M, Lee C R, Kim C S, Byungsung O 2003 J. Cryst. Growth 249 487
[6] Kappers M J, Datta R, Oliver R A, Rayment F D G, Vickers M E, Humphreys C J 2007 J. Cryst. Growth 300 70
[7] Gibart P 2004 Rep. Prog. Phys. 67 667
[8] Wu X H, Fini P, Tarsa E J, Heying B, Keller S, Mishra U K, Denbaars S P, Speck J S 1998 J. Cryst. Growth 189/190 231
[9] Fini P, Wu X, Tarsa E J, Golan Y, Srikant V, Denbaars S P, Speck J S 1998 Jpn. J. Appl. Phys. 37 4460
[10] Lu L, Gao Z Y, Shen B, Xu F J, Huang S, Miao Z L, Hao Y, Yang Z J, Zhang G Y, Zhang X P, Xu J, Yu D P 2008 J. Appl. Phys. 104 123525
[11] Huang S Y, Yang J R 2008 Jpn. J. Appl. Phys. 47 7999
[12] Shen X Q, Matsuhata H, Okumura H 2005 Appl. Phys. Lett. 86 021912
[13] Ayers J E 1994 J. Cryst. Growth 135 71
[14] Heinke H, Kirchner V, Einfeldt S, Hommel D 2000 Appl. Phys. Lett. 77 2145
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[1] Xu S R, Zhang J C, Li Z M, Zhou X W, Xu Z H, Zhao G C, Zhu Q W, Zhang J F, Mao W, Hao Y 2009 Acta Phys. Sin. 58 5705 (in Chinese) [许晟瑞, 张进城, 李志明, 周小伟, 许志豪, 赵广才, 朱庆伟, 张金凤, 毛维, 郝跃 2009 物理学报 58 5705]
[2] Xu S R, Hao Y, Zhang J C, Zhou X W, Cao Y R, Ou X X, Mao W, Du D C, Wang H 2010 Chin. Phys. B 19 107204
[3] Morkoc H, Strite S, Gao G B, Lin M E, Sverdlov B, Burns M 1994 J. Appl. Phys. 76 1363
[4] Nakamura S 1998 Science 281 956
[5] Park S E, Lim S M, Lee C R, Kim C S, Byungsung O 2003 J. Cryst. Growth 249 487
[6] Kappers M J, Datta R, Oliver R A, Rayment F D G, Vickers M E, Humphreys C J 2007 J. Cryst. Growth 300 70
[7] Gibart P 2004 Rep. Prog. Phys. 67 667
[8] Wu X H, Fini P, Tarsa E J, Heying B, Keller S, Mishra U K, Denbaars S P, Speck J S 1998 J. Cryst. Growth 189/190 231
[9] Fini P, Wu X, Tarsa E J, Golan Y, Srikant V, Denbaars S P, Speck J S 1998 Jpn. J. Appl. Phys. 37 4460
[10] Lu L, Gao Z Y, Shen B, Xu F J, Huang S, Miao Z L, Hao Y, Yang Z J, Zhang G Y, Zhang X P, Xu J, Yu D P 2008 J. Appl. Phys. 104 123525
[11] Huang S Y, Yang J R 2008 Jpn. J. Appl. Phys. 47 7999
[12] Shen X Q, Matsuhata H, Okumura H 2005 Appl. Phys. Lett. 86 021912
[13] Ayers J E 1994 J. Cryst. Growth 135 71
[14] Heinke H, Kirchner V, Einfeldt S, Hommel D 2000 Appl. Phys. Lett. 77 2145
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