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By analyzing the transmission spectra of hetero-epitaxial GaN films on sapphires, a film thickness measurement method is presented. The method uses the interference effect of the crystal film and considers the effect of the refractive index n on the photon wavelength. Applications of it show that the method is a rapid and precise one for measuring the film thickness of GaN crystals.
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Keywords:
- GaN /
- transmission spectra /
- thickness measurement
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