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Wang Shun-Li, Wang Ya-Chao, Guo Dao-You, Li Chao-Rong, Liu Ai-Ping. NiO/GaN p-n junction ultraviolet photodetector and self-powered technology. Acta Physica Sinica,
2021, 70(12): 128502.
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2017, 66(11): 112901.
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Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang. Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica,
2017, 66(6): 067903.
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Li Jiang-Jiang, Gao Zhi-Yuan, Xue Xiao-Wei, Li Hui-Min, Deng Jun, Cui Bi-Feng, Zou De-Shu. On-chip fabrication of lateral growth ZnO nanowire array UV sensor. Acta Physica Sinica,
2016, 65(11): 118104.
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Qi Jun-Jie, Xu Min-Xuan, Hu Xiao-Feng, Zhang Yue. Frabrication and properties of self-powered ultraviolet detectors based on one-demensional ZnO nanomaterials. Acta Physica Sinica,
2015, 64(17): 172901.
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Huang Shi-Hao, Li Cheng, Chen Cheng-Zhao, Zheng Yuan-Yu, Lai Hong-Kai, Chen Song-Yan. The optical property of tensile-strained n-type doped Ge. Acta Physica Sinica,
2012, 61(3): 036202.
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Liu Mu-Lin, Min Qiu-Ying, Ye Zhi-Qing. Efficiency droop in blue InGaN/GaN light emitting diodes on Si substrate. Acta Physica Sinica,
2012, 61(17): 178503.
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Fu Xiao-Qian, Chang Ben-Kang, Li Biao, Wang Xiao-Hui, Qiao Jian-Liang. Comprehensive Survey for the Frontier Disciplines Progress of negative electron affinity GaN photocathode. Acta Physica Sinica,
2011, 60(3): 038503.
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2011, 60(4): 047901.
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Zhao De-Gang, Zhou Mei. A new method to measure the carrier concentration of p-GaN. Acta Physica Sinica,
2011, 60(3): 037804.
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Guo Xiang-Yang, Du Xiao-Qing, Chang Ben-Kang, Qiao Jian-Liang, Qian Yun-Sheng, Wang Xiao-Hui. Quantum efficiency recovery of reflection-mode NEA GaN photocathode. Acta Physica Sinica,
2011, 60(1): 017903.
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Deng Yi, Zhao De-Gang, Wu Liang-Liang, Liu Zong-Shun, Zhu Jian-Jun, Jiang De-Sheng, Zhang Shu-Ming, Liang Jun-Wu. Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector. Acta Physica Sinica,
2010, 59(12): 8903-8909.
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Qiao Jian-Liang, Chang Ben-Kang, Du Xiao-Qing, Niu Jun, Zou Ji-Jun. Quantum efficiency decay mechanism for reflection-mode negative electron affinity GaN photocathode. Acta Physica Sinica,
2010, 59(4): 2855-2859.
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Zhang Shuang, Zhao De-Gang, Liu Zong-Shun, Zhu Jian-Jun, Zhang Shu-Ming, Wang Yu-Tian, Duan Li-Hong, Liu Wen-Bao, Jiang De-Sheng, Yang Hui. Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector. Acta Physica Sinica,
2009, 58(11): 7952-7957.
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Jiao Rong-Zhen, Feng Chen-Xu, Ma Hai-Qiang. Performance of various quantum-key-distribution systems using 1.55 μm up-conversion single-photon detector. Acta Physica Sinica,
2008, 57(3): 1352-1355.
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Zhou Mei, Chang Qing-Ying, Zhao De-Gang. A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector. Acta Physica Sinica,
2008, 57(4): 2548-2553.
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Zhou Mei, Zhao De-Gang. Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica,
2008, 57(7): 4570-4574.
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Xie Zi-Li, Zhang Rong, Xiu Xiang-Qian, Han Ping, Liu Bin, Chen Lin, Yu Hui-Qiang, Jiang Ruo-Lian, Shi Yi, Zheng You-Dou. MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector. Acta Physica Sinica,
2007, 56(11): 6717-6721.
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Zhou Mei, Zuo Shu-Hua, Zhao De-Gang. A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica,
2007, 56(9): 5513-5517.
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Chang Jun-Tao, Wu Ling-An. Absolute self-calibration of the quantum efficiency of single-photon detectors. Acta Physica Sinica,
2003, 52(5): 1132-1136.
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