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一维纳米氧化锌自驱动紫外探测器的构建与性能研究

齐俊杰 徐旻轩 胡小峰 张跃

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一维纳米氧化锌自驱动紫外探测器的构建与性能研究

齐俊杰, 徐旻轩, 胡小峰, 张跃

Frabrication and properties of self-powered ultraviolet detectors based on one-demensional ZnO nanomaterials

Qi Jun-Jie, Xu Min-Xuan, Hu Xiao-Feng, Zhang Yue
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  • 本文通过化学气相沉积法制备了ZnO纳米材料, 利用扫描电镜、光致发光谱、X衍射光谱及拉曼光谱等方法对制备的材料进行了表征. 基于制备的单根ZnO线分别构建了三种不同结构的紫外探测器件: Ag-ZnO-Ag肖特基型、PEDOT:PSS/n-ZnO结型和p-Si/n-ZnO结型紫外探测器, 并对器件的性能进行了研究. 结果表明: 三种不同结构的器件都表现出良好的整流特性, 对紫外线均有明显的光响应; 在零偏压下, 都有明显的自驱动特性. 三种器件中, p-Si/n-ZnO型紫外探测器性能最为优异: 在零偏压下, 暗电流约在1.210-3 nA, 光电流在5.4 nA左右, 光暗电流比为4.5103, 上升和下降时间分别为0.7 s和1 s. 通过三类器件性能比较, 表明无机p-Si更适合与ZnO构建pn结型自驱动紫外探测器.
    ZnO micro/nanowires were synthesized by chemical vapor deposition method. The morphology and structure of the products have been characterized by using scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL) and micro-Raman scattering spectrometer, etc. Results show that the surface of the highly uniform ZnO wire is smooth and the as-synthesized ZnO wires show high crystal quality. Three types of UV detector are constructed using a single ZnO nanowire with different contact characteristics, and their corresponding performances are investigated systematically by using Keithley 4200-SCS and other equipments. All of the three different devices exhibit good rectifying characters and significant responsivity to ultraviolet light. The devices show self-driven features at zero bias. Compared with the devices made from Schottky contact and ZnO/PEDOT:PSS film, the present single ZnO nanowire/p-Si film devices with heterojunctions have the best self-powered function, which can be attributed to the stronger built-in electric field as well as the smaller dark current due to the insulating layer on the p-Si film. At zero bias, the fabricated ZnO nanowire/p-Si film device can deliver a dark current of 1.210-3 nA and a high photosensitivity of about 4.5103 under UV illumination. The response of the devices made from ZnO nanowire/p-Si film to UV illumination in air is pretty fast with the rise time of about 0.7 s and the fall time of about 1 s, which could be attributed to the fact that the photo-generated electron-hole pairs in the depletion layer is quickly separated by the built-in electric field, leading to a rapid response speed and a larger photocurrent. Comparison among the three kinds of devices indicates that the devices made from ZnO nanowire/p-Si film are the best candidate for UV detectors.
      通信作者: 齐俊杰, junjieqi@ustb.edu.cn;yuezhang@ustb.edu.cn ; 张跃, junjieqi@ustb.edu.cn;yuezhang@ustb.edu.cn
    • 基金项目: 本工作由重大科学研究计划(批准号: 2013CB932601)、国际科技合作专项项目(批准号: 2012DFA50990), 国家自然科学基金(批准号: 51232001, 51172022)、北京市教委共建项目及长江团队项目资助的课题.
      Corresponding author: Qi Jun-Jie, junjieqi@ustb.edu.cn;yuezhang@ustb.edu.cn ; Zhang Yue, junjieqi@ustb.edu.cn;yuezhang@ustb.edu.cn
    • Funds: Project supported by the Major Research Plan of the National Natural Science Foundation of China (Grant No. 2013CB932601), the Special Projects of International Cooperation in Science and Technology (Grant No. 2012DFA50990), the National Natural Science Foundation of China (Grant Nos. 51232001, 51172022), and the Beijing municipal education commission project and the Yangtze river team project.
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    Jang E S, Won J H, Kim Y W, Chen X Y, Choy J H 2010 Cryst. Eng. Comm. 12 3467

    [3]

    Sun H, Zhang Q F, Wu J L 2007 Acta Phys. Sin. 56 3479 (in Chinese) [孙晖, 张琦锋, 吴锦雷 2007 物理学报 56 3479]

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    Poncharal P, Wang Z L, Ugarte D 1999 Sci. 283 1513

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    Heo Y W, Tien L C, Norton D P 2004 Appl. Phys. Lett. 85 2002

    [12]

    Yang Y, Qi J J, Liao Q L 2009 Appl. Phys. Lett. 95 123112

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    Soci C, Zhang A, Xiang B, Dayeh S A, Aplin D P R, Park J, Bao X Y, Lo Y H, Wang D 2007 Nano Lett. 7 1003

    [14]

    Jha S K, Liu C P, Chen Z H, Chen K J, Bello I, Zapien J A, Zhang W J, Lee S T 2010 J. Phys. Chem. C 114 7999

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    Lin W, Yan X, Zhang X 2011 Solid State Commun. 151 1860

    [16]

    Song Z M, Zhao D X, Guo Z, Li B H, Zhang Z Z, Shen D Z 2012 Acta Phys. Sin. 61 052901 (in Chinese) [宋志明, 赵东旭, 郭振, 李炳辉, 张振中, 申德振 2012 物理学报 61 052901]

    [17]

    Yang Y, Guo W, Qi J, Zhang Y 2010 Appl. Phys. Lett. 97 223113

    [18]

    Bai Z M, Yan X Q, Chen X, Liu H S, Shen Y W, Zhang Y 2013 Curr. Appl. Phys. 13 165

    [19]

    Zhou J, Gu Y, Hu Y, Mai W, Yeh P H, Bao G, Sood A K, Polla D J, Wang Z L 2009 Appl. Phys. Len. 94 191103

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    Kamiya T, Tajima K, Nomura K 2008 Phys. Status Solidi 205 1929

    [21]

    Wu C X, Zhou M, Feng C C, Yuan R, Li G, Ma W W, Cai L 2008 Acta Phys. Sin. 57 3887 (in Chinese) [吴春霞, 周明, 冯程程, 袁润, 李刚, 马伟伟, 蔡兰 2008 物理学报 57 3887]

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    Chen K J, Hung F Y, Chang S J, Young S J 2009 J. Alloy Compd 479 674

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  • [1]

    Lee C H, Kim Y J, Lee J, Hong Y J, Jeon J M, Kim M, Hong S, Yi G C 2011 Nanotechnology 22 055205

    [2]

    Jang E S, Won J H, Kim Y W, Chen X Y, Choy J H 2010 Cryst. Eng. Comm. 12 3467

    [3]

    Sun H, Zhang Q F, Wu J L 2007 Acta Phys. Sin. 56 3479 (in Chinese) [孙晖, 张琦锋, 吴锦雷 2007 物理学报 56 3479]

    [4]

    Liu R B, Zou B S 2011 Chin. Phys. B 20 047104

    [5]

    Das S N, Moon K J, Kar J P, Choi J H, Xiong J J 2010 Appl. Phys. Lett. 97 022103

    [6]

    Dai Y, Zhang Y, Li Q K, Nan C W 2002 Chem. Phys. Lett. 358 83

    [7]

    Dai Y, Zhang Y, Bai Y Q, Wang Z L 2003 Chem. Phys. Lett. 375 96

    [8]

    Chen H S, Qi J J, Zhang Y, Zhang X M, Liao Q L, Huang Y H 2007 Appl. Surf. Sci. 253 8901

    [9]

    Wang Z L, Poncharal P, De Heer W A 2000 Pure appl. Chem. 72 209

    [10]

    Poncharal P, Wang Z L, Ugarte D 1999 Sci. 283 1513

    [11]

    Heo Y W, Tien L C, Norton D P 2004 Appl. Phys. Lett. 85 2002

    [12]

    Yang Y, Qi J J, Liao Q L 2009 Appl. Phys. Lett. 95 123112

    [13]

    Soci C, Zhang A, Xiang B, Dayeh S A, Aplin D P R, Park J, Bao X Y, Lo Y H, Wang D 2007 Nano Lett. 7 1003

    [14]

    Jha S K, Liu C P, Chen Z H, Chen K J, Bello I, Zapien J A, Zhang W J, Lee S T 2010 J. Phys. Chem. C 114 7999

    [15]

    Lin W, Yan X, Zhang X 2011 Solid State Commun. 151 1860

    [16]

    Song Z M, Zhao D X, Guo Z, Li B H, Zhang Z Z, Shen D Z 2012 Acta Phys. Sin. 61 052901 (in Chinese) [宋志明, 赵东旭, 郭振, 李炳辉, 张振中, 申德振 2012 物理学报 61 052901]

    [17]

    Yang Y, Guo W, Qi J, Zhang Y 2010 Appl. Phys. Lett. 97 223113

    [18]

    Bai Z M, Yan X Q, Chen X, Liu H S, Shen Y W, Zhang Y 2013 Curr. Appl. Phys. 13 165

    [19]

    Zhou J, Gu Y, Hu Y, Mai W, Yeh P H, Bao G, Sood A K, Polla D J, Wang Z L 2009 Appl. Phys. Len. 94 191103

    [20]

    Kamiya T, Tajima K, Nomura K 2008 Phys. Status Solidi 205 1929

    [21]

    Wu C X, Zhou M, Feng C C, Yuan R, Li G, Ma W W, Cai L 2008 Acta Phys. Sin. 57 3887 (in Chinese) [吴春霞, 周明, 冯程程, 袁润, 李刚, 马伟伟, 蔡兰 2008 物理学报 57 3887]

    [22]

    Chen K J, Hung F Y, Chang S J, Young S J 2009 J. Alloy Compd 479 674

    [23]

    Fang F, Zhao D X, Li B H, Zhang Z Z, Shen D Z, Wang X H 2010 J. Phys. Chem. C 114 12477

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出版历程
  • 收稿日期:  2015-02-03
  • 修回日期:  2015-04-07
  • 刊出日期:  2015-09-05

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