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2024, 73(7): 077201.
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Wang Shun-Li, Wang Ya-Chao, Guo Dao-You, Li Chao-Rong, Liu Ai-Ping. NiO/GaN p-n junction ultraviolet photodetector and self-powered technology. Acta Physica Sinica,
2021, 70(12): 128502.
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Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan. Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica,
2020, 69(4): 047201.
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Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang. Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica,
2017, 66(6): 067903.
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2014, 63(21): 217806.
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Wang Yan-Wen, Wu Hua-Rui. Exciton states and optical properties in zinc-blende GaN/AlGaN quantum dot. Acta Physica Sinica,
2012, 61(10): 106102.
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Chen Jun, Fan Guang-Han, Zhang Yun-Yan. The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers. Acta Physica Sinica,
2012, 61(17): 178504.
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Wang Du-Yang, Sun Hui-Qing, Xie Xiao-Yu, Zhang Pan-Jun. Theoretical study of luminance of GaN quantum dots planted in quantum well. Acta Physica Sinica,
2012, 61(22): 227303.
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Zhang Yun-Yan, Fan Guan-Han. Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED. Acta Physica Sinica,
2011, 60(1): 018502.
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Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun. Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica,
2010, 59(2): 1258-1262.
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Deng Yi, Zhao De-Gang, Wu Liang-Liang, Liu Zong-Shun, Zhu Jian-Jun, Jiang De-Sheng, Zhang Shu-Ming, Liang Jun-Wu. Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector. Acta Physica Sinica,
2010, 59(12): 8903-8909.
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Zhou Mei, Zhao De-Gang. A new p-n structure ultraviolet photodetector with p－-GaN active region. Acta Physica Sinica,
2009, 58(10): 7255-7260.
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Zhang Shuang, Zhao De-Gang, Liu Zong-Shun, Zhu Jian-Jun, Zhang Shu-Ming, Wang Yu-Tian, Duan Li-Hong, Liu Wen-Bao, Jiang De-Sheng, Yang Hui. Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector. Acta Physica Sinica,
2009, 58(11): 7952-7957.
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Zhou Mei, Chang Qing-Ying, Zhao De-Gang. A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector. Acta Physica Sinica,
2008, 57(4): 2548-2553.
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Shen Ye, Xing Huai-Zhong, Yu Jian-Guo, Lü Bin, Mao Hui-Bing, Wang Ji-Qing. Curie-temperature modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells. Acta Physica Sinica,
2007, 56(6): 3453-3457.
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Guo Liang-Liang, Feng Qian, Ma Xiang-Bai, Hao Yue, Liu Jie. Relation between breakdown voltage and current collapse in GaN FP-HEMTs. Acta Physica Sinica,
2007, 56(5): 2900-2904.
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Xiong Da-Yuan, Li Ning, Xu Wen-Lan, Zhen Hong-Lou, Li Zhi-Feng, Lu Wei. Study of the dark current in very long wavelength quantum well infrared photodetectors. Acta Physica Sinica,
2007, 56(9): 5424-5428.
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Zhou Mei, Zuo Shu-Hua, Zhao De-Gang. A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica,
2007, 56(9): 5513-5517.
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Li Pei-Xian, Hao Yue, Fan Long, Zhang Jin-Cheng, Zhang Jin-Feng, Zhang Xiao-Ju. AlGaN/GaN heterojunction wavefunction half analytic model based on quantum distu rbance. Acta Physica Sinica,
2003, 52(12): 2985-2988.
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ZHANG DE-HENG, LIU YUN-YAN, ZHANG DE-JUN. THE UV PHOTOCONDUCTIVITY OF n-TYPE GaN FILMSDEPOSITED BY MOCVD. Acta Physica Sinica,
2001, 50(9): 1800-1804.
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