The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers

Chen Jun; Fan Guang-Han; Zhang Yun-Yan

doi:10.7498/aps.61.178504

Abstract

The electrical and optical characteristics of GaN-based dual-wavelength light-emitting diodes (LEDs) with the specific design of various thick barriers are investigated numerically. The simulation results show that the thickness of barrier plays a regulatory role in emission spectrum of the dual-wavelength LED. The internal quantum efficiency droop is improved and the two peaks of spectrum become uniform due to the thickness of barriers gradually decreasing from the n-side to the p-side in a specific way. The balanced distribution of carrier concentration and the enhancement of electron confinement could be the major physical mechanism behind these improvements. It is also shown that the better optical performance is achieved at the large current injection level.

Keywords:

Authors and contacts

1.
Experimental Teaching Center, Guangdong University of Technology, Guangzhou 510006, China;
2.
Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
Funds: Project supported by the National Natural Science Foundation of China(Grant No. 61176043), the Fund for Strategic and Emerging Industries of Guangdong Province, China (Grant No. 2010A081002005), and the Program of Combination of Production and Research by Guangdong Province and Ministry of Education of China (Grant No. 2010B090400192).

References

[1]	Mathew C, Schmid T, Kim K C, Hitoshi S, Natalie F, Hisashi M, Shuji N, Steven P D, James S S 2007 Jpn.J.Appl.Phys. 46 L126
[2]	Zhang G Y, Tong Y Z, Yang Z J, Jin S X, Li J, Gan Z Z 1997 Appl.Phys.Lett. 71 3376
[3]	Luo Y, Guo W P, Shao J P, Hu H, Han Y J, Xue S, Wang L, Sun C Z, Hao Z B 2004 Acta Phys.Sin. 53 2720 (in Chinese) [罗毅, 郭文平, 邵嘉平, 胡卉,韩彦军, 薛松, 汪莱, 孙长征, 郝智彪 2004 物理学报 53 2720]
[4]	Zhang G Y, Yang Z J, Tong Y Z, Qin Z X, Hu X D, Chen Z Z, Ding X M, Lu M, Li Z H, Yu T J, Zhang L, Gan Z Z, Zhao Y, Yang C F 2003 Opt. Mater. 23 183
[5]	Zhu L H, Cai J F, Li X Y, Deng B, Liu B L 2010 Acta Phys.Sin. 59 4996 (in Chinese) [朱丽虹, 蔡加法, 李晓莹, 邓彪, 刘宝林 2010 物理学报 59 4996]
[6]	Chen J F, Wang W X, Liu S H, Ren Z X 1998 Acta Phys.Sin. 47 1592 (in Chinese) [陈俊芳, 王卫乡, 刘颂豪, 任兆杏 1998 物理学报 47 1592]
[7]	Liu N X, Wang H B, Liu J P, Niu N H, Han J, Sheng G D 2006 Acta Phys. Sin. 55 1424 (in Chinese) [刘乃鑫, 王怀兵, 刘建平, 牛南辉, 韩军, 沈光地 2006 物理学报 55 1424]
[8]	Zhu H Y, Huang C H, Zhang G, Wei Y, Huang L X, Chen J,Chen W D, Chen Z Q 2007 Opt.Commun. 270 296
[9]	Luo M C, Wang X L, Li J M 2003 J. Cryst. Growth 249 1
[10]	Zhu H N, Xu Z, Zhao S L, Zhang F J, Kong C, Yan G, Gong W 2010 Acta Phys. Sin. 59 8093 (in Chinese) [朱海娜, 徐征, 赵谡玲, 张福俊, 孔超, 闫光, 龚伟 2010 物理学报 59 8093]
[11]	Zheng Q H, Yin Y A, Zhu L H, Liu B L 2009 Appl. Phys. Lett. 94 222104
[12]	Li M C, Qiu Y X, Liu G J, Wang Y T, Zhang B S, Zhao L C 2009 J. Appl. Phys. 105 094903
[13]	Yamada M, Narukawa Y, Mukai T 2002 Jpn. J. Appl. Phys. 41 L246
[14]	Damilano B, Grandjean N, Pernot C, Massies J 2001 Jpn. J. Appl. Phys. 40 L918
[15]	Zhang Y Y, Fan G H 2011 Acta Phys. Sin. 60 018502 (in Chinese) [张运炎, 范广涵 2011 物理学报 60 018502]
[16]	Zhang Y Y, Fan G H, Zhang Y, Zheng S W 2011 Acta Phys. Sin. 60 028503 (in Chinese) [张运炎, 范广涵, 章勇, 郑树文 2011 物理学报 60 028503]
[17]	Shei S C, Sheu J K, Tsai C M, Lai W C, Lee M L, Kuo C H 2006 Jpn. J. Appl. Phys. 45 2463
[18]	David A, Grundmann M J, Kaeding J F, Gardner N F, Mihopoulos T G, Krames M R, Mihopoulos T G, Krames M R 2008 Appl. Phys. Lett. 92 053502
[19]	Kim M H, Schubert M F, Qi D, Jong K K, Schubert F, Joachim P 2007 Appl. Phys. Lett. 91 183507
[20]	Li Y L, Gessmann T, Schubert E F, Sheu J K 2003 J. Appl. Phys. 94 2167
[21]	Simon L Z 1998 Crosslight (Burnaby: Crosslight Software Inc.)
[22]	Piprek J, Nakamura S 2002 IEE Proc.-Optoelectron. 149 145
[23]	Thahab S M, Hassan H A, Hassan Z 2007 Opt. Express 15 2380
[24]	Chuang S L, Chang C S 1997 Semico. Sci. and Technol. 12 252
[25]	Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[26]	Piprek J 2003 Semiconductor Optoelectronic Devices (San Diego: Academic Press) p43
[27]	Vurgaftman I, Meyer J R 2003 J. Appl. Phys. 94 3675
[28]	Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan K F 2000 J.Appl.Phys.88 6476
[29]	Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[30]	Fiorentini V, Bernardini F, Ambacher O 2002 Appl. Phys. Lett. 80 1204
[31]	Kuo Y K, Chang J Y, Tsai M C, Yen S H 2009 Appl. Phys. Lett. 95 011116
[32]	Schubert M F, Xu J, Kim J K, Schubert E F, Kim M H, Yoon S, Lee S M, Sone C, Sakong T, Park Y 2008 Appl. Phys. Lett. 93 041102

Cited By

[1]	Mathew C, Schmid T, Kim K C, Hitoshi S, Natalie F, Hisashi M, Shuji N, Steven P D, James S S 2007 Jpn.J.Appl.Phys. 46 L126
[2]	Zhang G Y, Tong Y Z, Yang Z J, Jin S X, Li J, Gan Z Z 1997 Appl.Phys.Lett. 71 3376
[3]	Luo Y, Guo W P, Shao J P, Hu H, Han Y J, Xue S, Wang L, Sun C Z, Hao Z B 2004 Acta Phys.Sin. 53 2720 (in Chinese) [罗毅, 郭文平, 邵嘉平, 胡卉,韩彦军, 薛松, 汪莱, 孙长征, 郝智彪 2004 物理学报 53 2720]
[4]	Zhang G Y, Yang Z J, Tong Y Z, Qin Z X, Hu X D, Chen Z Z, Ding X M, Lu M, Li Z H, Yu T J, Zhang L, Gan Z Z, Zhao Y, Yang C F 2003 Opt. Mater. 23 183
[5]	Zhu L H, Cai J F, Li X Y, Deng B, Liu B L 2010 Acta Phys.Sin. 59 4996 (in Chinese) [朱丽虹, 蔡加法, 李晓莹, 邓彪, 刘宝林 2010 物理学报 59 4996]
[6]	Chen J F, Wang W X, Liu S H, Ren Z X 1998 Acta Phys.Sin. 47 1592 (in Chinese) [陈俊芳, 王卫乡, 刘颂豪, 任兆杏 1998 物理学报 47 1592]
[7]	Liu N X, Wang H B, Liu J P, Niu N H, Han J, Sheng G D 2006 Acta Phys. Sin. 55 1424 (in Chinese) [刘乃鑫, 王怀兵, 刘建平, 牛南辉, 韩军, 沈光地 2006 物理学报 55 1424]
[8]	Zhu H Y, Huang C H, Zhang G, Wei Y, Huang L X, Chen J,Chen W D, Chen Z Q 2007 Opt.Commun. 270 296
[9]	Luo M C, Wang X L, Li J M 2003 J. Cryst. Growth 249 1
[10]	Zhu H N, Xu Z, Zhao S L, Zhang F J, Kong C, Yan G, Gong W 2010 Acta Phys. Sin. 59 8093 (in Chinese) [朱海娜, 徐征, 赵谡玲, 张福俊, 孔超, 闫光, 龚伟 2010 物理学报 59 8093]
[11]	Zheng Q H, Yin Y A, Zhu L H, Liu B L 2009 Appl. Phys. Lett. 94 222104
[12]	Li M C, Qiu Y X, Liu G J, Wang Y T, Zhang B S, Zhao L C 2009 J. Appl. Phys. 105 094903
[13]	Yamada M, Narukawa Y, Mukai T 2002 Jpn. J. Appl. Phys. 41 L246
[14]	Damilano B, Grandjean N, Pernot C, Massies J 2001 Jpn. J. Appl. Phys. 40 L918
[15]	Zhang Y Y, Fan G H 2011 Acta Phys. Sin. 60 018502 (in Chinese) [张运炎, 范广涵 2011 物理学报 60 018502]
[16]	Zhang Y Y, Fan G H, Zhang Y, Zheng S W 2011 Acta Phys. Sin. 60 028503 (in Chinese) [张运炎, 范广涵, 章勇, 郑树文 2011 物理学报 60 028503]
[17]	Shei S C, Sheu J K, Tsai C M, Lai W C, Lee M L, Kuo C H 2006 Jpn. J. Appl. Phys. 45 2463
[18]	David A, Grundmann M J, Kaeding J F, Gardner N F, Mihopoulos T G, Krames M R, Mihopoulos T G, Krames M R 2008 Appl. Phys. Lett. 92 053502
[19]	Kim M H, Schubert M F, Qi D, Jong K K, Schubert F, Joachim P 2007 Appl. Phys. Lett. 91 183507
[20]	Li Y L, Gessmann T, Schubert E F, Sheu J K 2003 J. Appl. Phys. 94 2167
[21]	Simon L Z 1998 Crosslight (Burnaby: Crosslight Software Inc.)
[22]	Piprek J, Nakamura S 2002 IEE Proc.-Optoelectron. 149 145
[23]	Thahab S M, Hassan H A, Hassan Z 2007 Opt. Express 15 2380
[24]	Chuang S L, Chang C S 1997 Semico. Sci. and Technol. 12 252
[25]	Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[26]	Piprek J 2003 Semiconductor Optoelectronic Devices (San Diego: Academic Press) p43
[27]	Vurgaftman I, Meyer J R 2003 J. Appl. Phys. 94 3675
[28]	Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan K F 2000 J.Appl.Phys.88 6476
[29]	Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[30]	Fiorentini V, Bernardini F, Ambacher O 2002 Appl. Phys. Lett. 80 1204
[31]	Kuo Y K, Chang J Y, Tsai M C, Yen S H 2009 Appl. Phys. Lett. 95 011116
[32]	Schubert M F, Xu J, Kim J K, Schubert E F, Kim M H, Yoon S, Lee S M, Sone C, Sakong T, Park Y 2008 Appl. Phys. Lett. 93 041102

[1]	Cao Wen-Yu, Zhang Ya-Ting, Wei Yan-Feng, Zhu Li-Juan, Xu Ke, Yan Jia-Sheng, Zhou Shu-Xing, Hu Xiao-Dong. Strain modulation effect of superlattice interlayer on InGaN/GaN multiple quantum well. Acta Physica Sinica, 2024, 73(7): 077201. doi: 10.7498/aps.73.20231677
[2]	Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang. Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903. doi: 10.7498/aps.66.067903
[3]	Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang. Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode. Acta Physica Sinica, 2017, 66(15): 158501. doi: 10.7498/aps.66.158501
[4]	Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei. Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica, 2016, 65(3): 038402. doi: 10.7498/aps.65.038402
[5]	Wang Xue-Song, Ji Zi-Wu, Wang Hui-Ning, Xu Ming-Sheng, Xu Xian-Gang, Lü Yuan-Jie, Feng Zhi-Hong. Internal quantum efficiency of InGaN/GaN multiple quantum well. Acta Physica Sinica, 2014, 63(12): 127801. doi: 10.7498/aps.63.127801
[6]	Huang Bin-Bin, Xiong Chuan-Bing, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Tang Ying-Wen, Quan Zhi-Jue, Xu Long-Quan, Zhang Meng, Wang Li, Fang Wen-Qing, Liu Jun-Lin, Jiang Feng-Yi. Electroluminescence properties of vertical structure GaN based LED on silicon and copper submount at different temperatures and current densities. Acta Physica Sinica, 2014, 63(21): 217806. doi: 10.7498/aps.63.217806
[7]	Chen Hao-Ran, Yang Lin-An, Zhu Zhang-Ming, Lin Zhi-Yu, Zhang Jin-Cheng. Theoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diode. Acta Physica Sinica, 2013, 62(21): 217301. doi: 10.7498/aps.62.217301
[8]	Zhang Pan-Jun, Sun Hui-Qing, Guo Zhi-You, Wang Du-Yang, Xie Xiao-Yu, Cai Jin-Xin, Zheng Huan, Xie Nan, Yang Bin. The spectrum-control of dual-wavelength LED with quantum dots planted in quantum wells. Acta Physica Sinica, 2013, 62(11): 117304. doi: 10.7498/aps.62.117304
[9]	Wang Du-Yang, Sun Hui-Qing, Xie Xiao-Yu, Zhang Pan-Jun. Theoretical study of luminance of GaN quantum dots planted in quantum well. Acta Physica Sinica, 2012, 61(22): 227303. doi: 10.7498/aps.61.227303
[10]	Zhang Yun-Yan, Fan Guang-Han, Zhang Yong, Zheng Shu-Wen. Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer. Acta Physica Sinica, 2011, 60(2): 028503. doi: 10.7498/aps.60.028503
[11]	Zhang Yun-Yan, Fan Guan-Han. Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED. Acta Physica Sinica, 2011, 60(1): 018502. doi: 10.7498/aps.60.018502
[12]	Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao. Analyses of laser-induced p-type doping of GaN in the improvement of light-emitting diodes. Acta Physica Sinica, 2010, 59(2): 1268-1274. doi: 10.7498/aps.59.1268
[13]	Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao. Analysis of failure mechanism of GaN-based white light-emitting diode. Acta Physica Sinica, 2010, 59(7): 5002-5009. doi: 10.7498/aps.59.5002
[14]	Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun. Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica, 2010, 59(2): 1258-1262. doi: 10.7498/aps.59.1258
[15]	Zhu Li-Hong, Cai Jia-Fa, Li Xiao-Ying, Deng Biao, Liu Bao-Lin. Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layers. Acta Physica Sinica, 2010, 59(7): 4996-5001. doi: 10.7498/aps.59.4996
[16]	Xiong Chuan-Bing, Jiang Feng-Yi, Fang Wen-Qing, Wang Li, Mo Chun-Lan. Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate. Acta Physica Sinica, 2008, 57(5): 3176-3181. doi: 10.7498/aps.57.3176
[17]	Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di. Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2007, 56(10): 6003-6007. doi: 10.7498/aps.56.6003
[18]	Shen Ye, Xing Huai-Zhong, Yu Jian-Guo, Lü Bin, Mao Hui-Bing, Wang Ji-Qing. Curie-temperature modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells. Acta Physica Sinica, 2007, 56(6): 3453-3457. doi: 10.7498/aps.56.3453
[19]	Song Shu-Fang, Zhou Sheng-Qiang, Chen Wei-De, Zhu Jian-Jun, Chen Chang-Yong, Xu Zhen-Jia. RBS/channeling study and photoluminscence properties of Er-implanted GaN. Acta Physica Sinica, 2003, 52(10): 2558-2562. doi: 10.7498/aps.52.2558
[20]	Li Pei-Xian, Hao Yue, Fan Long, Zhang Jin-Cheng, Zhang Jin-Feng, Zhang Xiao-Ju. AlGaN/GaN heterojunction wavefunction half analytic model based on quantum distu rbance. Acta Physica Sinica, 2003, 52(12): 2985-2988. doi: 10.7498/aps.52.2985

Catalog

Vol. 61, Issue 17 - 2012-09-05

Metrics

Abstract views: 6850
PDF Downloads: 749
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板