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In this paper we study theoretically the degradation phenomenon of GaN-based resonant tunneling diode (RTD). The effects of trapping centers on GaN-based RTD are calculated and studied by self-consistently solving the Poisson-Schrödinger aligns when three experimentally obtained deep-level trapping centers are introduced into the AlGaN/GaN/AlGaN quantum well. Results show that the degradations of negative differential resistance (NDR) characteristic in GaN-based RTDs are actually caused by the combined action of the activation energy and the defect density. The deep-level trapping center with high activation energy plays a dominating role in the degradation of NDR characteristics because the probability of ionization is exponentially proportional to the activation energy.
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Keywords:
- RTD /
- GaN /
- trapping centers /
- probability of ionization
[1] Zhang J F, Wang P Y, Xue J S, Zhou Y B, Zhang J C, Hao Y 2011 Acta phys. Sin. 60 117305 (in Chinese) [张金凤, 王平亚, 薛军帅, 周勇波, 张进成, 郝跃 2011 物理学报 60 117305]
[2] Wang P Y, Zhang J F, Xue J S, Zhou Y B, Zhang J C, Hao Y 2011 Acta phys. Sin. 60 117304 (in Chinese) [王平亚, 张金凤, 薛军帅, 周勇波, 张进成, 郝跃 2011 物理学报 60 117304]
[3] Xu S R, Zhang J C, Li Z M, Zhou X W, Xu Z H, Zhao G C, Zhu Q W, Zhang J F, Mao W, Hao Y 2009 Acta phys. Sin. 58 5706 (in Chinese) [许晟瑞, 张进城, 李志明, 周小伟, 许志豪, 赵广才, 朱庆伟, 张金凤, 毛维, 郝跃 2009 物理学报 58 5705]
[4] Xu S R, Hao Y, Zhang J C, Zhou X W, Cao Y R, Ou X X, Mao W, Du D C, Wang H 2010 Chin. Phys. B 19 107204
[5] Lin Z Y, Zhang J C, Xu S R, L L, Liu Z Y, Ma J C, Xue X Y, Xue J S, Hao Y 2011 Acta phys. Sin. 61 186103 (in Chinese) [林志宇, 张进成, 许晟瑞, 吕玲, 刘子扬, 马俊彩, 薛晓咏, 薛军帅, 郝跃 2011 物理学报 61 186103]
[6] Bayram C, Vashaei Z, Razeghi M 2010 Appl. Phys. Lett. 97 092104
[7] Vashaei Z, Bayram C, Razeghi M 2010 J. Appl. Phys. 107 083505
[8] Bayram C, Vashaei Z, Razeghi M 2010 Appl. Phys. Lett. 97 181109
[9] Bayram C, Vashaei Z, Razeghi M 2010 Appl. Phys. Lett. 96 042103
[10] Boucherit M, Soltani A, Monroy E, Rousseau M, Deresmes D, Berthe M, Durand C, De Jaeger J C 2011 Appl. Phys. Lett. 99 182109
[11] Ambacher O, Cimalla V 2008 Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications (New York: Springer Science+Business Media) p35
[12] Malbert N, Labat N, Curutchet A, Sury C, Hoel V, de Jaeger J C, Defrance N, Douvry Y, Dua C, Oualli M, Bru-Chevallier C, Bluet J M, Chikhaoui W 2009 Microelectron Reliab. 49 1216
[13] Fang Z Q, Look D C 2005 Appl. Phys. Lett. 87 182115
[14] Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F 2000 J. Appl. Phys. 87 334
[15] Sacconi F, Carlo A D I, Lugli P 2002 Phys. Status Solidi A 190 295
[16] Hermann M, Monroy E, Helman A, Baur B, Albrecht M, Daudin B, Ambacher O, Stutzmann M, Eickhoff 2004 Phys. Status Solidi C 1 2210
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[1] Zhang J F, Wang P Y, Xue J S, Zhou Y B, Zhang J C, Hao Y 2011 Acta phys. Sin. 60 117305 (in Chinese) [张金凤, 王平亚, 薛军帅, 周勇波, 张进成, 郝跃 2011 物理学报 60 117305]
[2] Wang P Y, Zhang J F, Xue J S, Zhou Y B, Zhang J C, Hao Y 2011 Acta phys. Sin. 60 117304 (in Chinese) [王平亚, 张金凤, 薛军帅, 周勇波, 张进成, 郝跃 2011 物理学报 60 117304]
[3] Xu S R, Zhang J C, Li Z M, Zhou X W, Xu Z H, Zhao G C, Zhu Q W, Zhang J F, Mao W, Hao Y 2009 Acta phys. Sin. 58 5706 (in Chinese) [许晟瑞, 张进城, 李志明, 周小伟, 许志豪, 赵广才, 朱庆伟, 张金凤, 毛维, 郝跃 2009 物理学报 58 5705]
[4] Xu S R, Hao Y, Zhang J C, Zhou X W, Cao Y R, Ou X X, Mao W, Du D C, Wang H 2010 Chin. Phys. B 19 107204
[5] Lin Z Y, Zhang J C, Xu S R, L L, Liu Z Y, Ma J C, Xue X Y, Xue J S, Hao Y 2011 Acta phys. Sin. 61 186103 (in Chinese) [林志宇, 张进成, 许晟瑞, 吕玲, 刘子扬, 马俊彩, 薛晓咏, 薛军帅, 郝跃 2011 物理学报 61 186103]
[6] Bayram C, Vashaei Z, Razeghi M 2010 Appl. Phys. Lett. 97 092104
[7] Vashaei Z, Bayram C, Razeghi M 2010 J. Appl. Phys. 107 083505
[8] Bayram C, Vashaei Z, Razeghi M 2010 Appl. Phys. Lett. 97 181109
[9] Bayram C, Vashaei Z, Razeghi M 2010 Appl. Phys. Lett. 96 042103
[10] Boucherit M, Soltani A, Monroy E, Rousseau M, Deresmes D, Berthe M, Durand C, De Jaeger J C 2011 Appl. Phys. Lett. 99 182109
[11] Ambacher O, Cimalla V 2008 Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications (New York: Springer Science+Business Media) p35
[12] Malbert N, Labat N, Curutchet A, Sury C, Hoel V, de Jaeger J C, Defrance N, Douvry Y, Dua C, Oualli M, Bru-Chevallier C, Bluet J M, Chikhaoui W 2009 Microelectron Reliab. 49 1216
[13] Fang Z Q, Look D C 2005 Appl. Phys. Lett. 87 182115
[14] Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F 2000 J. Appl. Phys. 87 334
[15] Sacconi F, Carlo A D I, Lugli P 2002 Phys. Status Solidi A 190 295
[16] Hermann M, Monroy E, Helman A, Baur B, Albrecht M, Daudin B, Ambacher O, Stutzmann M, Eickhoff 2004 Phys. Status Solidi C 1 2210
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