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Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei. Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica,
2016, 65(3): 038402.
doi: 10.7498/aps.65.038402
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Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui. Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica,
2013, 62(11): 117103.
doi: 10.7498/aps.62.117103
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Sun Yun, Wang Sheng-Lai, Gu Qing-Tian, Xu Xin-Guang, Ding Jian-Xu, Liu Wen-Jie, Liu Guang-Xia, Zhu Sheng-Jun. Study of KDP crystal lattice strain and stress by high resolution X-ray diffraction. Acta Physica Sinica,
2012, 61(21): 210203.
doi: 10.7498/aps.61.210203
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Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Wang Xiao-Hui, Li Biao, Xu Yuan. Photoemission mechanism of GaN vacuum surface electron source. Acta Physica Sinica,
2011, 60(12): 127901.
doi: 10.7498/aps.60.127901
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Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun. Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica,
2010, 59(2): 1258-1262.
doi: 10.7498/aps.59.1258
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Zhou Mei, Zhao De-Gang. Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica,
2008, 57(7): 4570-4574.
doi: 10.7498/aps.57.4570
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Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong. Study on optical properties of Er/Er+O doped GaN thin films. Acta Physica Sinica,
2007, 56(3): 1621-1626.
doi: 10.7498/aps.56.1621
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Guo Liang-Liang, Feng Qian, Ma Xiang-Bai, Hao Yue, Liu Jie. Relation between breakdown voltage and current collapse in GaN FP-HEMTs. Acta Physica Sinica,
2007, 56(5): 2900-2904.
doi: 10.7498/aps.56.2900
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Ding Zhi-Bo, Wang Qi, Wang Kun, Wang Huan, Chen Tian-Xiang, Zhang Guo-Yi, Yao Shu-De. Determination of chemical composition and average crystal lattice constants of InGaN/GaN multiple quantum wells. Acta Physica Sinica,
2007, 56(5): 2873-2877.
doi: 10.7498/aps.56.2873
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Fan Long, Hao Yue. The effect of radiation induced strain relaxation on electric performance of AlmGa1－mN/GaN HEMT. Acta Physica Sinica,
2007, 56(6): 3393-3399.
doi: 10.7498/aps.56.3393
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Wang Huan, Yao Shu-De, Pan Yao-Bo, Zhang Guo-Yi. Strain in AlInGaN thin films caused by different contents of Al and In studied by Rutherford backscattering/channeling and high resolution X-ray diffraction. Acta Physica Sinica,
2007, 56(6): 3350-3354.
doi: 10.7498/aps.56.3350
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Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong. Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica,
2006, 55(3): 1407-1412.
doi: 10.7498/aps.55.1407
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He Bao-Ping, Chen Wei, Wang Gui-Zhen. A comparison of ionizing radiation damage in CMOS devices from 60Co Gamma rays, electrons and protons. Acta Physica Sinica,
2006, 55(7): 3546-3551.
doi: 10.7498/aps.55.3546
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Ding Zhi-Bo, Yao Shu-De, Wang Kun, Cheng Kai. Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1－xN and AlN buffer layers grown on Si(111). Acta Physica Sinica,
2006, 55(6): 2977-2981.
doi: 10.7498/aps.55.2977
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Qin Qi, Yu Nai-Sen, Guo Li-Wei, Wang Yang, Zhu Xue-Liang, Chen Hong, Zhou Jun-Ming. Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition. Acta Physica Sinica,
2005, 54(11): 5450-5454.
doi: 10.7498/aps.54.5450
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Wan Wei, Tang Chun-Yan, Wang Yu-Mei, Li Fang-Hua. A study on the stacking fault in GaN crystals by high-resolution electron microscope imaging. Acta Physica Sinica,
2005, 54(9): 4273-4278.
doi: 10.7498/aps.54.4273
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Xu Peng-Shou, Deng Rui, Pan Hai-Bin, Xu Fa-Qiang, Xie Chang-Kun, Li Yong-Hua, Liu Feng-Qin, K. Yibulaxin. Photoelectron diffraction study on the polarity of GaN surface. Acta Physica Sinica,
2004, 53(4): 1171-1176.
doi: 10.7498/aps.53.1171
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Song Shu-Fang, Zhou Sheng-Qiang, Chen Wei-De, Zhu Jian-Jun, Chen Chang-Yong, Xu Zhen-Jia. RBS/channeling study and photoluminscence properties of Er-implanted GaN. Acta Physica Sinica,
2003, 52(10): 2558-2562.
doi: 10.7498/aps.52.2558
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Zhang Ji-Cai, Dai Lun, Qin Guo-Gang, Ying Li-Zhen, Zhao Xin-Sheng. . Acta Physica Sinica,
2002, 51(3): 629-634.
doi: 10.7498/aps.51.629
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LI CHAO-RONG, WU LI-JUN, CHEN WAN-CHUN. STUDIES OF THE IMPURITY EFFECTS ON CRYSTALLINE QUALITY BY HIGH-RESOLUTION X-RAY DIFFRACTION. Acta Physica Sinica,
2001, 50(11): 2185-2191.
doi: 10.7498/aps.50.2185
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