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Wang Dang-Hui, Xu Tian-Han, Wang Rong, Luo She-Ji, Yao Ting-Zhen. Research on emission transition mechanisms of InGaN/GaN multiple quantum well light-emitting diodes using low-frequency current noise. Acta Physica Sinica,
2015, 64(5): 050701.
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Huang Bin-Bin, Xiong Chuan-Bing, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Tang Ying-Wen, Quan Zhi-Jue, Xu Long-Quan, Zhang Meng, Wang Li, Fang Wen-Qing, Liu Jun-Lin, Jiang Feng-Yi. Electroluminescence properties of vertical structure GaN based LED on silicon and copper submount at different temperatures and current densities. Acta Physica Sinica,
2014, 63(21): 217806.
doi: 10.7498/aps.63.217806
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Chen Hao-Ran, Yang Lin-An, Zhu Zhang-Ming, Lin Zhi-Yu, Zhang Jin-Cheng. Theoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diode. Acta Physica Sinica,
2013, 62(21): 217301.
doi: 10.7498/aps.62.217301
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Chen Jun, Fan Guang-Han, Zhang Yun-Yan. The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers. Acta Physica Sinica,
2012, 61(17): 178504.
doi: 10.7498/aps.61.178504
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Chen Huan-Ting, Lü Yi-Jun, Gao Yu-Lin, Chen Zhong, Zhuang Rong-Rong, Zhou Xiao-Fang, Zhou Hai-Guang. The physical characteristic study on luminance uniformity and temperature for power GaN LEDs chip. Acta Physica Sinica,
2012, 61(16): 167104.
doi: 10.7498/aps.61.167104
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Yue Qing-Yang, Kong Fan-Min, Li Kang, Zhao Jia. Study on the light extraction efficiency of GaN-based light emitting diode by using the defects of the photonic crystals. Acta Physica Sinica,
2012, 61(20): 208502.
doi: 10.7498/aps.61.208502
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Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi. Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates. Acta Physica Sinica,
2011, 60(7): 078503.
doi: 10.7498/aps.60.078503
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Zhang Yun-Yan, Fan Guang-Han, Zhang Yong, Zheng Shu-Wen. Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer. Acta Physica Sinica,
2011, 60(2): 028503.
doi: 10.7498/aps.60.028503
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Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie. A new growth method of roughed p-GaN in GaN-based light emitting diodes. Acta Physica Sinica,
2011, 60(9): 098107.
doi: 10.7498/aps.60.098107
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Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao. Analysis of failure mechanism of GaN-based white light-emitting diode. Acta Physica Sinica,
2010, 59(7): 5002-5009.
doi: 10.7498/aps.59.5002
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Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun. Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica,
2010, 59(2): 1258-1262.
doi: 10.7498/aps.59.1258
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Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao. Analyses of laser-induced p-type doping of GaN in the improvement of light-emitting diodes. Acta Physica Sinica,
2010, 59(2): 1268-1274.
doi: 10.7498/aps.59.1268
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Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao. Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica,
2009, 58(10): 7189-7193.
doi: 10.7498/aps.58.7189
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Zhou Mei, Chang Qing-Ying, Zhao De-Gang. A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector. Acta Physica Sinica,
2008, 57(4): 2548-2553.
doi: 10.7498/aps.57.2548
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Zhou Mei, Zhao De-Gang. Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica,
2008, 57(7): 4570-4574.
doi: 10.7498/aps.57.4570
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Li Bing-Qian, Liu Yu-Hua, Feng Yu-Chun. The power dissipation of equivalent series resistance and its influence on lumen efficiency of GaN based high power light-emitting diodes. Acta Physica Sinica,
2008, 57(1): 477-481.
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Xiong Chuan-Bing, Jiang Feng-Yi, Fang Wen-Qing, Wang Li, Mo Chun-Lan. Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate. Acta Physica Sinica,
2008, 57(5): 3176-3181.
doi: 10.7498/aps.57.3176
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Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling. Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica,
2008, 57(1): 472-476.
doi: 10.7498/aps.57.472
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Zhou Mei, Zuo Shu-Hua, Zhao De-Gang. A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica,
2007, 56(9): 5513-5517.
doi: 10.7498/aps.56.5513
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Luo Yi, Guo Wen-Ping, Shao Jia-Ping, Hu Hui, Han Yan-Jun, Xue Song, Wang Lai, Sun Chang-Zheng, Hao Zhi-Biao. A study on wavelength stability of GaN-based blue light emitting diodes. Acta Physica Sinica,
2004, 53(8): 2720-2723.
doi: 10.7498/aps.53.2720
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