GaN-based lateral diode with nanocrystalline diamond passivation layer

REN Zeyang; SONG Songyuan; ZHANG Tao; CHEN Heyuan; LI Yao; ZHANG Jinfeng; LI Junpeng; CHEN Junfei; ZHU Weidong; HAO Yue; ZHANG Jincheng

doi:10.7498/aps.74.20250523

Abstract

Thermal accumulation under high output power density is one of the key bottlenecks faced by GaN-based power devices. The nanocrystalline diamond (NCD) passivation layer strategy plays a crucial role in improving heat dissipation in high-power GaN devices, while the existing studies focus on GaN-based HEMT. In this study, nanocrystalline diamond films with a thickness of 380–450 nm are grown on Si-based AlGaN/GaN heterostructure materials using a microwave plasma chemical vapor deposition (MPCVD) system. Consequently, lateral Schottky barrier diode devices with NCD passivation are fabricated, and their electrical and thermal properties are investigated. The results show that the DC forward characteristics of the NCD passivated diodes are essentially the same as those of devices without NCD passivation. Moreover, dynamic voltage tests indicate that the NCD passivation layer significantly mitigates current collapse in GaN devices at high frequencies. Under a –20 V DC bias and a pulse voltage of 2.5 V, the current density degradation of NCD passivated devices is only 2.6%, whereas devices without diamond passivation almost completely degrade. Thermal imaging microscopy under varying DC power levels shows that thermal failure occurs at an output power density of approximately 4 W/mm for conventional devices, while NCD passivated devices can reach around 7.5 W/mm. The electrical degradation behaviour of NCD passivated device is also tested under long-time reverse bias. This work demonstrates for the first time the application of nanocrystalline diamond passivation to thermal management of GaN-based power diodes, and clearly demonstrates the potential of this strategy in non-HEMT power device applications.

Keywords:

Authors and contacts

1.
State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, Xi’an 710071, China
2.
Wuhu Research Institute, Xidian University, Wuhu 241002, China
3.
Xi’an University of Technology, Xi’an 710048, China

Corresponding author: ZHANG Tao, zhangtao@xidian.edu.cn ; ZHANG Jincheng, jchzhang@xidian.edu.cn

Funds: Project supported by the Key Research and Development Program of Shandong Province, China (Grant No. 2022CXGC020306), the National Natural Science Foundation of China (Grant Nos. 62127812, 62374122, 62134006, 62204193, 62421005), the China Postdoctoral Science Foundation (Grant No. 2021TQ0256), the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant Nos. XJSJ24054, YJSJ24020), the Key Research and Development Program of Anhui Province, China (Grant No. 2023a05020006), and the Hefei Comprehensive National Science Center, China.

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References

[1]	Bader S J, Lee H, Chaudhuri R, Huang S M, Hickman A, Molnar A, Xing H L G, Jena D, Then H W, Chowdhury N, Palacios T 2020 IEEE Trans. Electron Devices 67 4010 Google Scholar
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[24]	Johnstone D, Doğan S, Leach J, Moon Y T, Fu Y, Hu Y, Morkoç H 2004 Appl. Phys. Lett. 85 4058 Google Scholar

Cited By

图 1 Si基AlGaN/GaN异质结外延片结构

Figure 1. Si-based AlGaN/GaN heterojunction epitaxial structure.

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图 2 纳米晶金刚石钝化GaN基SBD主要工艺流程示意图　(a) 材料清洗与台面隔离; (b) 与欧姆阴极制作; (c) SiN_x隔离层淀积; (d) 纳米晶金刚石薄膜生长; (e) 多步刻蚀暴露阳极区域; (f) 肖特基阳极制作与阴极开孔

Figure 2. Main fabrication process flow diagram of nano crystalline diamond-passivated GaN-based SBD: (a) Sample cleaning and mesa isolation; (b) ohmic cathode formation; (c) deposition of SiN_x isolation layer; (d) growth of nano crystalline diamond film; (e) multi-step etching to expose the anode region; (f) fabrication of Schottky anode and cathode opening.

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图 3 纳米晶金刚石钝化AlGaN/GaN肖特基二极管(器件A) SEM显微图像

Figure 3. SEM micrograph of AlGaN/GaN SBD with nano crystalline diamond passivation layer (device A).

DownLoad: Full-Size Img PowerPoint

图 4 纳米晶金刚石薄膜SEM显微图像　(a) 截面; (b) 表面形貌

Figure 4. SEM micrograph of nano crystalline diamond film: (a) Cross-section; (b) surface morphology.

DownLoad: Full-Size Img PowerPoint

图 5 器件A和器件B静态正向特性对比　(a) 电流-电压特性; (b) 导通电阻特性

Figure 5. Comparison of static forward characteristics between device A and device B: (a) I-V characteristics; (b) on-resistance characteristics.

DownLoad: Full-Size Img PowerPoint

图 6 (a) NCD钝化SBD与常规器件反向特性对比; (b) 刻蚀完成后阳极区域SEM显微图像; (c) 刻蚀完成后阳极区域AFM显微图像

Figure 6. (a) Comparison of reverse characteristics between NCD-passivated SBD and conventional device; (b) SEM micrograph of the anode region after etching; (c) AFM micrograph of the anode region after etching.

DownLoad: Full-Size Img PowerPoint

图 7 器件A和器件B的动态正向特性对比　(a) 器件A脉冲电流-电压特性; (b) 器件B脉冲电流-电压特性; (c) 器件A动态导通电阻特性; (d) 器件B动态导通电阻特性

Figure 7. Comparison of dynamic forward characteristics between device A and B: (a) Pulsed I-V characteristics of device A; (b) pulsed I-V characteristics of device B; (c) dynamic on-resistance characteristics of device A; (d) dynamic on-resistance characteristics of device B.

DownLoad: Full-Size Img PowerPoint

图 8 器件A, B的变功率最高结温对比

Figure 8. Comparison of junction temperature under varying power conditions between devices A and B.

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图 9 器件A, B的定功率热成像温度分布

Figure 9. Thermal imaging temperature distribution of devices A and B under certain output power density.

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图 10 器件A, B传热仿真模拟结果

Figure 10. Simulation results of heat transfer of devices A and B.

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图 11 器件A反向应力微光显微镜测试结果

Figure 11. EMMI microscopy test results of device A after reverse stress applied.

DownLoad: Full-Size Img PowerPoint

[1]	Bader S J, Lee H, Chaudhuri R, Huang S M, Hickman A, Molnar A, Xing H L G, Jena D, Then H W, Chowdhury N, Palacios T 2020 IEEE Trans. Electron Devices 67 4010 Google Scholar
[2]	Qin Y, Albano B, Spencer J, Lundh J S, Wang B, Buttay C, Tadjer M, DiMarino C, Zhang Y H 2023 J. Phys. D: Appl. Phys 56 093001 Google Scholar
[3]	Minoura Y, Ohki T, Okamoto N, Sato M, Ozaki S, Yamada A, Kotani J 2022 Appl. Phys. Express 15 036501 Google Scholar
[4]	Ding Y J, Li J Y, Hao Z L, Wang Q, Zhang H J, Peng Y, Chen M X 2024 IEEE Photonics Technol. Lett. 36 1005 Google Scholar
[5]	Gerrer T, Pomeroy J, Yang F Y, Francis D, Carroll J, Loran B, Witkowski L, Yarborough M, Uren M J, Kuball M 2021 IEEE Trans. Electron Devices 68 1530 Google Scholar
[6]	Malakoutian M, Kasperovich A, Rich D, Woo K, Perez C, Soman R, Saraswat D, Kim J K, Noshin M, Chen M, Vaziri S, Bao X Y, Shih C C, Woon W Y, Asheghi M, Goodson K E, Liao S S, Mitra S, Chowdhury S 2023 Cell Rep. Phys. Sci. 4 101686 Google Scholar
[7]	Wang Y N, Hu X F, Ge L, Liu Z H, Xu M S, Peng Y, Li B, Yang Y Q, Li S Q, Xie X J, Wang X W, Xu X G, Hu X B 2023 Crystals 13 500 Google Scholar
[8]	Rossi S, Alomari M, Zhang Y, Bychikhin S, Pogany D, Weaver J M R, Kohn E 2013 Diamond Relat. Mater. 40 69 Google Scholar
[9]	Matsumae T, Kurashima Y, Takagi H, Shirayanagi Y, Hiza S, Nishimura K, Higurashi E 2022 Scr. Mater. 215 114725 Google Scholar
[10]	Gao R H, Wang X H, Mu F W, Li X J, Wei C, Zhou W, Shi J A, Tian Y, Xing X J, Li H Y, Huang S, Jiang Q M, Wei K, Liu X Y 2024 J. Alloys Compd. 985 174075 Google Scholar
[11]	Tadjer M J, Anderson T J, Ancona M G, Raad P E, Komarov P, Bai T, Gallagher J C, Koehler A D, Goorsky M S, Francis D A, Hobart K D, Kub F J 2019 IEEE Electron Device Lett. 40 881 Google Scholar
[12]	白玲, 宁静, 张进成, 王东, 王博宇, 武海迪, 赵江林, 陶然, 李忠辉 2023 人工晶体学报 52 901 Google Scholar Bai L, Ning J, Zhang J C, Wang D, Wang B Y, Wu H D, Zhao J L, Tao R, Li Z H 2023 J. Synth. Cryst. 52 901 Google Scholar
[13]	Gu Y, Zhang Y, Hua B, Ni X, Fan Q, Gu X 2021 J. Electron. Mater. 50 4239 Google Scholar
[14]	兰飞飞, 刘莎莎, 房诗舒, 王英民, 程红娟 2024 人工晶体学报 53 913 Google Scholar Lan F F, Liu S S, Fang S S, Wang Y M, Cheng H J 2024 J. Synth. Cryst. 53 913 Google Scholar
[15]	Zheng Y T, Li C M, Liu J L, Wei J J, Ye H T 2021 Funct. Diamond 1 63 Google Scholar
[16]	Yang H, Ma Y, Dai Y 2021 Funct. Diamond 1 150 Google Scholar
[17]	Anderson T J, Hobart K D, Tadjer M J, Koehler A D, Imhoff E A, Hite J K, Feygelson T I, Pate B B, Eddy C R, Kub F J 2016 ECS J. Solid State Sci. Technol. 6 Q3036 Google Scholar
[18]	Guo H, Li Y, Yu X, Zhou J, Kong Y 2022 Micromachines (Basel) 13 1486 Google Scholar
[19]	Zhou X Y, Malakoutian M, Soman R, Bian Z L, Martinez R P, Chowdhury S 2022 IEEE Trans. Electron Devices 69 6650 Google Scholar
[20]	刘庆彬, 蔚翠, 郭建超, 马孟宇, 何泽召, 周闯杰, 高学栋, 余浩, 冯志红 2023 物理学报 72 098104 Google Scholar Liu Q B, Yu C, Guo J C, Ma M Y, He Z Z, Zhou C J, Gao X D, Yu H, Feng Z H 2023 Acta Phys. Sin. 72 098104 Google Scholar
[21]	Ryou J H, Choi S 2022 Nat. Electron. 5 834 Google Scholar
[22]	Tadjer M J, Anderson T J, Hobart K D, Feygelson T I, Caldwell J D, Eddy C R, Kub F J, Butler J E, Pate B, Melngailis J 2012 IEEE Electron. Device Lett. 33 23 Google Scholar
[23]	Meyer D J, Koehler A D, Hobart K D, Eddy C R, Feygelson T I, Anderson T J, Roussos J A, Tadjer M J, Downey B P, Katzer D S, Pate B B, Ancona M G 2014 IEEE Electron. Device Lett. 35 1013 Google Scholar
[24]	Johnstone D, Doğan S, Leach J, Moon Y T, Fu Y, Hu Y, Morkoç H 2004 Appl. Phys. Lett. 85 4058 Google Scholar

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