Preparation of nanostructured GaN films and their field emission enhancement for different substrates

Chen Cheng-Cheng; Liu Li-Ying; Wang Ru-Zhi; Song Xue-Mei; Wang Bo; Yan Hui

doi:10.7498/aps.62.177701

Abstract

Using pulsed laser deposition (PLD) method, we have prepared nanostructured GaN films of the same thickness on Si and SiC substrates, and analyzed their microstructure characterization and field emission properties. The results showed that the substrates of GaN nanostructured films had significant effect on the microstructure and field emission properties. Compared with the GaN nano-film on Si substrate, the field emission from the GaN nano-film on SiC substrate has been significantly improved: its field emission current was increased by orders of magnitude. The field emission enhancement should be originated from the nanocrystalline microstructure and its orientation polarization induced field enhancement effect. Results indicate that to prepare field emission films of outstanding performance, appropriate substrates and crystal microstructures of the films are the key issues.

Keywords:

Authors and contacts

1.
Laboratory of Thin Film Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China;
2.
College of Applied Sciences, Beijing University of Technology, Beijing 100124, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11274029,11074017, 51202007, 11274028), the Beijing Nova Program (Grant No. 2008B10), the Key Programs of Beijing Plan of Science and Technology (Grant No. D121100001812002), the Importation and Development of High-Caliber Talents Project of Beijing Municipal Institutions (Grant No. CIT&TCD201204037), and the Basic Research Foundation of Beijing University of Technology.

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Cited By

[1]	Yoshida H, Urushido T, Miyake H, Hiramatsu K 2001 Jpn. J. Appl. Phys. 40 L1301
[2]	Ng D K T, Hong M H, Tan L S, Zhu Y W, Sow C H 2007 Nanotechnology 18 375707
[3]	Kimura CYamamota THori TSugino T 2009 Appl. Phys. Lett. 79 4533
[4]	Joag D S,Late D J, Lanke U D 2004 Solid State Commun. 130 305
[5]	Wang F Y, Wang R Z, Zhao W, Song X M, Wang B, Yan H 2009 Sci. China. Ser. F 52 1947
[6]	Zhao W, Wang R Z, Song X M, Wang H, Wang B, Yan H, Chu P K 2010 Appl. Phys. Lett. 96 101
[7]	Wang D, Jia S, Chen K J, Lau K M, Dikme Y, van Gemmern P, Lin Y C, Kalisch H, Jansen R H, Heuken M 2005 J. Appl. Phys. 97 056103
[8]	Honda Y, Kuroiwa Y, Yamaguchi M, Sawaki N 2002 Appl. Phys. Lett. 80 222
[9]	Xiong C B, Jiang F Y, Fang W Q, Wang L, Mo C L 2008 Acta. Phys. Sin. 57 3176 (in Chinese) [熊传兵, 江风益, 方文卿, 王立, 莫春兰 2008 物理学报 57 3716]
[10]	Krost A, Dadgar A 2002 Mat. Sci. Eng. B-Solid 93 77
[11]	Goldys E M, Godlewski M 2000 Appl. Phys. a-Mater 70 329
[12]	Komiyama J, Abe Y, Suzuki S, Nakanishi H 2006 J. Appl. Phys. 100 033519
[13]	Tran N H, Lamb R N, Lai L J, Yang Y W 2005 J. Phys. Chem. B 109 18348
[14]	Jiang Y, Luo Y, Xi G Y, Wang L, Li H T, Zhao W, Han Y J 2009 Acta. Phys. Sin. 58 7282 (in Chinese) [江洋, 罗毅, 席光义, 汪莱, 李洪涛, 赵维, 韩彦军 2009 物理学报 58 7282]
[15]	Pradhan D, Lin I N 2009 ACS Applied Materials & Interfaces 1 1444
[16]	Ma B, Hu W, Miyake H, Hiramatsu K 2009 Appl. Phys. Lett. 95 121910
[17]	Zhao W, Wang R Z, Song Z W, Wang H, Yan H, Chu P K 2013 The Journal of Physical Chemistry C 117 1518
[18]	Arslan E, Btn S, Lisesivdin S B, Kasap M, Ozcelik S, Ozbay E 2008 J. Appl. Phys. 103 103701
[19]	Bouya M, Carisetti D, Malbert N, Labat N, Perdu P, Clément J C, Bonnet M, Pataut G 2007 Microelectronics Reliability 47 1630
[20]	Jiang Z Y, Xu X H, Wu H S, Zhang F Q, Jin Z H 2002 Acta. Phys. Sin. 51 1586 (in Chinese) [姜振益, 许小红, 武海顺, 张富强, 金志浩 2002 物理学报 51 1586]
[21]	Dadgar A, Schulze F, Wienecke M, Gadanecz A, Bläsing J, Veit P, Hempel T, Diez A, Christen J, Krost A 2007 New Journal of Physics 9 389
[22]	Ishikawa H, Yamamoto K, Egawa T, Soga T, Jimbo T, Umeno M 1998 J. Cryst. Growth 189 178
[23]	Dadgar A, Veit P, Schulze F, Bläsing J, Krtschil A, Witte H, Diez A, Hempel T, Christen J, Clos R, Krost A 2007 Thin Solid Films 515 4356
[24]	Pal S, Jacob C 2004 Bull. Mat. Sci. 27 501
[25]	Chen Y, Wang W X, Li Y, Jiang Y, Xu P Q, Ma Z G, Song J, Chen H 2011 Chinese Journal of Luminescence 32 896
[26]	Fowler R H, Nordheim L 1928 Proc. Royal. Soc. 119 173
[27]	Young R D 1959 Phys. Rev. B 113 110
[28]	Fowler R H, Nordheim L 1928 Proceeding of the Royal Society of London: A 119 173
[29]	Semenenko M 2010 J. Appl. Phys. 107 013702
[30]	Underwood R D, Kozodoy P, Keller S, DenBaars S P, Mishra U K 1998 Appl. Phys. Lett. 73 405
[31]	Simon J, Protasenko V, Lian C X, Xing H L, Jena D 2010 Science 327 60
[32]	Ranjan V, Allan G, Priester C, Delerue C 2003 Phys. Rev. B 68 115305
[33]	Bechstedt F, Grossner U, Furthmuller J 2000 Phys. Rev. B 62 8003
[34]	Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[35]	Binh V T, Adessi C 2000 Phys. Rev. Lett. 85 864
[36]	Semet V, Binh V T, Zhang J P, Yang J, Khan M A, Tsu R 2004 Appl. Phys. Lett. 84 1937
[37]	Dadykin A A, Naumovets A G 2003 Materials Science and Engineering: A 353 12
[38]	Ikeda T, Teii K 2009 Appl. Phys. Lett. 94 143102
[39]	Hirth J P, Pond R C, Lothe J 2007 Acta Materialia 55 5428
[40]	Zapol P, Sternberg M, Curtiss L A, Frauenheim T, Gruen D M 2002 Phys. Rev. B 65 045403

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Vol. 62, Issue 17 - 2013-09-05

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