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The field emission characteristics of nano-diamond deposited on titanium substrate at various temperatures are studied. It was found that the emission current increases with increase of temperature and electric field，while the stability of the emission current basically does not change. The field emission characteristic deviates from classic Fowler-Nordheim theory. The mechanism of the emission current at different temperatures is analyzed. It may be due to the combined action of scale effect of the nano-diamond and masses of hot carrier produced by nano-diamonds in external electric field. In addition，the research indicates that larger current can be generated after titanium substrates being heated up to a certain degree in external electric field, which can have large effect on field emission，showing that the titanium substrate has a certain degree of temperature sensitivity and voltage sensitivity.
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Keywords:
- field emission /
- nano-diamond /
- scale effect /
- hot carrier
[1] ［1］Zhu W 1998 Scienc 282 1471
[2] ［2］Lee Y C，Debabrata P 2005 Diam. Relat. Mater.14 2055
[3] ［3］Roos M，Baranauskas V，Fontana M 2007 Appl. Surf. Sci. 253 7381
[4] ［4］Koeck F A M，Nemanich R J 2006 Diam. Relat. Mater.15 217
[5] ［5］Xue Z Q，Wu Q D 1993 Electron Emission and Electron Energy Distribution (Beijing: Peking University Press) p71 (in Chinese) ［薛增泉、吴全德 1993 电子发射与电子能谱（北京：北京大学出版社）第71页］
[6] ［6］Tan C M，Jia J J，Yu W B 2005 Appl. Phys. Lett. 86 263104
[7] ［7］Guo D B，Yuan G，Song C H，Gu C Z 2007 Acta Phys. Sin. 56 4667 (in Chinese) ［郭大勃、元光、宋翠华、顾长志 2008 物理学报 56 466
[8] ［8］Ristein J 2000 Diam. Relat. Mater. 9 1129
[9] ［9］Qian K Y 2004 Mater. Rev. 18 12 (in Chinese) ［钱开友 2004 材料导报 18 12］
[10] ］Nottingham W B 1941 Phys. Rev. 59 889
[11] ］Jiang T F，Tian S K，Zeng B Q 2006 J. Univ. Electron. Sci. Technol. Chin. 35 784 （in Chinese）［江天府、田时开、曾葆清 2006 电子科技大学学报 35 784］
[12] ］Li X B，Tang D W，Zhu J 2008 J. Grad. Sch. Chin. Acad. Sci. 25 598 (in Chinese) ［李小波、唐大伟、祝捷 2008 中国科学院研究生院学报 25 59
[13] ］［13］Wu G Q，Kong X R，Sun Z W 2006 J. Astronaut. 27 751 (in Chinese) ［吴国强、孔宪仁、孙兆伟 2006 宇航学报 27 751］
[14] ］Tang Z A，Wang L D 2001 Opt. Prec. Engng. 9 495 （in Chinese）［唐祯安、王立鼎 2001 光学精密工程 9 495］
[15] ］Palosz B，Pantea C，Grzanka E 2006 Diam. Relat. Mater. 2006 15 1813
[16] ］Liu E K，Zhu B S，Luo J S 1994 Semiconductor Physics (Beijing: Defense Industrys Press) p296 (in Chinese) ［刘恩科、朱秉升、罗晋生 1994 半导体物理学（北京：国防工业出版社）第296页］
[17] ］Chen J，Deng S Z，Chen J，She J C，Xu N S 2003 J. Appl. Phys. 94 5429
[18] ］Hu M，Qing Y X 2008 Acta Phys. Sin. 57 3698 （in Chinese）［胡明、秦玉香2008 物理学报57 3698］
[19] ］Dou Y，Gu C Z，Guo D B，Song H，Yuan G 2007 Acta Phys. Sin. 56 143 （in Chinese） ［窦艳、顾长志、郭大勃、宋航、元光 2007 物理学报 56 143］
[20] ］Xie W G，Chen J，Ming W W，Chen J，Zhou J，Deng S Z，Xu N S 2008 J. Vac. Sci. Technol. B 26 1321
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[1] ［1］Zhu W 1998 Scienc 282 1471
[2] ［2］Lee Y C，Debabrata P 2005 Diam. Relat. Mater.14 2055
[3] ［3］Roos M，Baranauskas V，Fontana M 2007 Appl. Surf. Sci. 253 7381
[4] ［4］Koeck F A M，Nemanich R J 2006 Diam. Relat. Mater.15 217
[5] ［5］Xue Z Q，Wu Q D 1993 Electron Emission and Electron Energy Distribution (Beijing: Peking University Press) p71 (in Chinese) ［薛增泉、吴全德 1993 电子发射与电子能谱（北京：北京大学出版社）第71页］
[6] ［6］Tan C M，Jia J J，Yu W B 2005 Appl. Phys. Lett. 86 263104
[7] ［7］Guo D B，Yuan G，Song C H，Gu C Z 2007 Acta Phys. Sin. 56 4667 (in Chinese) ［郭大勃、元光、宋翠华、顾长志 2008 物理学报 56 466
[8] ［8］Ristein J 2000 Diam. Relat. Mater. 9 1129
[9] ［9］Qian K Y 2004 Mater. Rev. 18 12 (in Chinese) ［钱开友 2004 材料导报 18 12］
[10] ］Nottingham W B 1941 Phys. Rev. 59 889
[11] ］Jiang T F，Tian S K，Zeng B Q 2006 J. Univ. Electron. Sci. Technol. Chin. 35 784 （in Chinese）［江天府、田时开、曾葆清 2006 电子科技大学学报 35 784］
[12] ］Li X B，Tang D W，Zhu J 2008 J. Grad. Sch. Chin. Acad. Sci. 25 598 (in Chinese) ［李小波、唐大伟、祝捷 2008 中国科学院研究生院学报 25 59
[13] ］［13］Wu G Q，Kong X R，Sun Z W 2006 J. Astronaut. 27 751 (in Chinese) ［吴国强、孔宪仁、孙兆伟 2006 宇航学报 27 751］
[14] ］Tang Z A，Wang L D 2001 Opt. Prec. Engng. 9 495 （in Chinese）［唐祯安、王立鼎 2001 光学精密工程 9 495］
[15] ］Palosz B，Pantea C，Grzanka E 2006 Diam. Relat. Mater. 2006 15 1813
[16] ］Liu E K，Zhu B S，Luo J S 1994 Semiconductor Physics (Beijing: Defense Industrys Press) p296 (in Chinese) ［刘恩科、朱秉升、罗晋生 1994 半导体物理学（北京：国防工业出版社）第296页］
[17] ］Chen J，Deng S Z，Chen J，She J C，Xu N S 2003 J. Appl. Phys. 94 5429
[18] ］Hu M，Qing Y X 2008 Acta Phys. Sin. 57 3698 （in Chinese）［胡明、秦玉香2008 物理学报57 3698］
[19] ］Dou Y，Gu C Z，Guo D B，Song H，Yuan G 2007 Acta Phys. Sin. 56 143 （in Chinese） ［窦艳、顾长志、郭大勃、宋航、元光 2007 物理学报 56 143］
[20] ］Xie W G，Chen J，Ming W W，Chen J，Zhou J，Deng S Z，Xu N S 2008 J. Vac. Sci. Technol. B 26 1321
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