Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer

Zhang Yun-Yan; Fan Guang-Han; Zhang Yong; Zheng Shu-Wen

doi:10.7498/aps.60.028503

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Zhang Yun-Yan, Fan Guang-Han, Zhang Yong, Zheng Shu-Wen. Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer. Acta Physica Sinica, 2011, 60(2): 028503. DOI: 10.7498/aps.60.028503

Citation:

Zhang Yun-Yan, Fan Guang-Han, Zhang Yong, Zheng Shu-Wen. Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer. Acta Physica Sinica, 2011, 60(2): 028503. DOI: 10.7498/aps.60.028503

Citation:

Zhang Yun-Yan, Fan Guang-Han, Zhang Yong, Zheng Shu-Wen. Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer. Acta Physica Sinica, 2011, 60(2): 028503. DOI: 10.7498/aps.60.028503