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Zhao Jian-Cheng, Wu Chao-Xing, Guo Tai-Liang. Carrier transport model of non-carrier-injection light-emitting diode. Acta Physica Sinica,
2023, 72(4): 048503.
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Jia Bo-Lun, Deng Ling-Ling, Chen Ruo-Xi, Zhang Ya-Nan, Fang Xu-Min. Numerical research of emission properties of localized surface plasmon resonance enhanced light-emitting diodes based on Ag@SiO2 nanoparticles. Acta Physica Sinica,
2017, 66(23): 237801.
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Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang. Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode. Acta Physica Sinica,
2017, 66(15): 158501.
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Zhang Chao-Yu, Xiong Chuan-Bing, Tang Ying-Wen, Huang Bin-Bin, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layer. Acta Physica Sinica,
2015, 64(18): 187801.
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Wang Dang-Hui, Xu Tian-Han, Wang Rong, Luo She-Ji, Yao Ting-Zhen. Research on emission transition mechanisms of InGaN/GaN multiple quantum well light-emitting diodes using low-frequency current noise. Acta Physica Sinica,
2015, 64(5): 050701.
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Liu Zhan-Hui, Zhang Li-Li, Li Qing-Fang, Zhang Rong, Xiu Xiang-Qian, Xie Zi-Li, Shan Yun. InGaN/GaN blue light emitting diodes grown on Si(110) and Si(111) substrates. Acta Physica Sinica,
2014, 63(20): 207304.
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Chen Wei-Chao, Tang Hui-Li, Luo Ping, Ma Wei-Wei, Xu Xiao-Dong, Qian Xiao-Bo, Jiang Da-Peng, Wu Feng, Wang Jing-Ya, Xu Jun. Research progress of substrate materials used for GaN-Based light emitting diodes. Acta Physica Sinica,
2014, 63(6): 068103.
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Wang Xue-Song, Ji Zi-Wu, Wang Hui-Ning, Xu Ming-Sheng, Xu Xian-Gang, Lü Yuan-Jie, Feng Zhi-Hong. Internal quantum efficiency of InGaN/GaN multiple quantum well. Acta Physica Sinica,
2014, 63(12): 127801.
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Chen Xin-Lian, Kong Fan-Min, Li Kang, Gao Hui, Yue Qing-Yang. Improvement of light extraction efficiency of GaN-based blue light-emitting diode by disorder photonic crystal. Acta Physica Sinica,
2013, 62(1): 017805.
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Yue Qing-Yang, Kong Fan-Min, Li Kang, Zhao Jia. Study on the light extraction efficiency of GaN-based light emitting diode by using the defects of the photonic crystals. Acta Physica Sinica,
2012, 61(20): 208502.
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Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi. Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates. Acta Physica Sinica,
2011, 60(7): 078503.
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Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao. Analyses of laser-induced p-type doping of GaN in the improvement of light-emitting diodes. Acta Physica Sinica,
2010, 59(2): 1268-1274.
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Zhu Li-Hong, Cai Jia-Fa, Li Xiao-Ying, Deng Biao, Liu Bao-Lin. Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layers. Acta Physica Sinica,
2010, 59(7): 4996-5001.
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Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao. Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica,
2009, 58(10): 7189-7193.
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Xiong Chuan-Bing, Jiang Feng-Yi, Wang Li, Fang Wen-Qing, Mo Chun-Lan. The investigation on the interference phenomenon in electroluminescence spectrum of vertical structured InGaAlN multiple quantum well light-emitting diodes. Acta Physica Sinica,
2008, 57(12): 7860-7864.
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Li Bing-Qian, Liu Yu-Hua, Feng Yu-Chun. The power dissipation of equivalent series resistance and its influence on lumen efficiency of GaN based high power light-emitting diodes. Acta Physica Sinica,
2008, 57(1): 477-481.
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Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling. Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica,
2008, 57(1): 472-476.
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Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di. Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica,
2007, 56(10): 6003-6007.
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Xu Geng-Zhao, Liang Hu, Bai Yong-Qiang, Lau Kei-May, Zhu Xing. Study of temperature dependent electroluminescence of InGaN/GaN multiple quantum wells using low temperature scanning near-field optical microscopy. Acta Physica Sinica,
2005, 54(11): 5344-5349.
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Luo Yi, Guo Wen-Ping, Shao Jia-Ping, Hu Hui, Han Yan-Jun, Xue Song, Wang Lai, Sun Chang-Zheng, Hao Zhi-Biao. A study on wavelength stability of GaN-based blue light emitting diodes. Acta Physica Sinica,
2004, 53(8): 2720-2723.
doi: 10.7498/aps.53.2720
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