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中国物理学会期刊
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Zhang Shan, Hu Xiao-Ning. Deep levels of HgCdTe diodes on Si substrates. Acta Physica Sinica, 2011, 60(6): 068502. DOI: 10.7498/aps.60.068502
Citation: Zhang Shan, Hu Xiao-Ning. Deep levels of HgCdTe diodes on Si substrates. Acta Physica Sinica, 2011, 60(6): 068502. DOI: 10.7498/aps.60.068502
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Deep levels of HgCdTe diodes on Si substrates

Acta Phys. Sin., 2011, 60(6): 068502.
DOI: 10.7498/aps.60.068502
CSTR: 32037.14.aps.60.068502
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