| [1] |
MING Wei, ZHANG Tao, WEN Zhijing, LI Lekang, GONG Pengjie, ZHANG Guangming. Nanoscale surface effects of SiO2/Si heterostructures and failure criterion of elasticity theory. Acta Physica Sinica,
2025, 74(15): 156201.
doi: 10.7498/aps.74.20250456
|
| [2] |
Duan Cong, Liu Jun-Jie, Chen Yong-Jie, Zuo Hui-Ling, Dong Jian-Sheng, Ouyang Gang. Adhesion properties of MoS2/SiO2 interface: Size and temperature effects. Acta Physica Sinica,
2024, 73(5): 056801.
doi: 10.7498/aps.73.20231648
|
| [3] |
Tao Peng-Cheng, Huang Yan, Zhou Xiao-Hao, Chen Xiao-Shuang, Lu Wei. First principles investigation of the tuning in metal-MoS2 interface induced by doping. Acta Physica Sinica,
2017, 66(11): 118201.
doi: 10.7498/aps.66.118201
|
| [4] |
Kang Chao-Yang, Tang Jun, Li Li-Min, Yan Wen-Sheng, Xu Peng-Shou, Wei Shi-Qiang. Growth and characterization of graphene on SiO2/Si substrate. Acta Physica Sinica,
2012, 61(3): 037302.
doi: 10.7498/aps.61.037302
|
| [5] |
Wan Li, Cao Liang, Zhang Wen-Hua, Han Yu-Yan, Chen Tie-Xin, Liu Ling-Yun, Guo Pan-Pan, Feng Jin-Yong, Xu Fa-Qiang. The interfacial electronic structures at FePc/TiO2(110) and FePc/C60 interface. Acta Physica Sinica,
2012, 61(18): 186801.
doi: 10.7498/aps.61.186801
|
| [6] |
Ma Xiao-Feng, Wang Yi-Zhe, Zhou Cheng-Yue. Structural and optical properties of a-Si ∶H/SiO2 multiple quantum wells. Acta Physica Sinica,
2011, 60(6): 068102.
doi: 10.7498/aps.60.068102
|
| [7] |
Cao Bo, Bao Liang-Man, Li Gong-Ping, He Shan-Hu. Diffusion and interface reaction of Cu and Si in Cu/SiO2/Si (111) systems. Acta Physica Sinica,
2006, 55(12): 6550-6555.
doi: 10.7498/aps.55.6550
|
| [8] |
Zhou Chun-Hong, Zheng You-Dou, Deng Yong-Zhen, Kong Yue-Chan, Chen Peng, Xi Dong-Juan, Gu Shu-Lin, Shen Bo, Zhang Rong, Jiang Ruo-Lian, Han Ping, Shi Yi. Study of interface trap states of AlN-Si(111) heterostructure*. Acta Physica Sinica,
2004, 53(11): 3888-3894.
doi: 10.7498/aps.53.3888
|
| [9] |
ZHANG XIAO-QING, G.M.SESSLER, XIA ZHONG-FU, ZHANG YE-WEN. CHARGE STORAGE AND TRANSPORTATION IN DOUBLE LAYERS OF Si3N4/SiO2 ELECTRET FILM BASED ON Si SUBSTRATE. Acta Physica Sinica,
2001, 50(2): 293-298.
doi: 10.7498/aps.50.293
|
| [10] |
SHANG YE-CHUN, ZHANG YI-MEN, ZHANG YU-MING. MONTE CARLO STUDY ON INTERFACE ROUGHNESS DEPENDENCE OF ELECTRON MOBILITY IN 6H-SiC INVERSION LAYERS. Acta Physica Sinica,
2001, 50(7): 1350-1354.
doi: 10.7498/aps.50.1350
|
| [11] |
LIU NING-NING, SUN JIA-MING, PAN SHAO-HUA, CHEN ZHENG-HAO, WANG RONG-PING, SHI WEN-SHENG, WANG XIAO-GUANG. FABRICATION AND SPECTROSCOPIC STUDIES OF a-Si/SiO2 SUPERLATTICES. Acta Physica Sinica,
2000, 49(5): 1019-1022.
doi: 10.7498/aps.49.1019
|
| [12] |
SUN YONG-KE, HENG CHENG-LIN, WANG SUN-TAO, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN -HUA. ELECTROLUMINESENCE FROM Au/(SiO2/Si/SiO2) NANOSCALE DOUBLE -BARRIER/n+-Si STRUCTURE. Acta Physica Sinica,
2000, 49(7): 1404-1408.
doi: 10.7498/aps.49.1404
|
| [13] |
ZHANG YA-XIONG, LI AN-PING, CHEN KAI-MAO, ZHANG BO-RUI, SUN YUN-XI, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN-HUA. ELECTROLUMINESCENCE FROM NANOSCALE Si-PARTICLES EMBEDDED SiO2 FILMS DEPOSITED ON n+-Si AND p-Si SUBSTRATES. Acta Physica Sinica,
1997, 46(5): 1011-1014.
doi: 10.7498/aps.46.1011
|
| [14] |
XU SHI-HONG, LU ER-DONG, YU XIAO-JIANG, PAN HAI-BIN, ZHANG FA-PEI, XU PENG-SHOU. SRPES STUDY OF THE Sm/Si(100) INTERFACE FORMATION AND ELECTRONIC STRUCTURES. Acta Physica Sinica,
1996, 45(11): 1898-1904.
doi: 10.7498/aps.45.1898
|
| [15] |
LU LI-WU, ZHOU JIE, FENG SONG-LIN, QIAN ZHAO-MING, PENG QING. THE DEEP LEVEL STUDIES OF n-Si/n+-Si INTERFACE IN SILICON DIRECT BONDING. Acta Physica Sinica,
1994, 43(5): 785-789.
doi: 10.7498/aps.43.785
|
| [16] |
CHEN KAI-MAO, JIN SI-XUAN, WU LAN-QING, ZENG SHU-RONG, LIU HONG-FEI. INTERFACE STATES AND DEEP CENTERS IN Au-DOPED MOS STRUCTURES. Acta Physica Sinica,
1993, 42(8): 1324-1332.
doi: 10.7498/aps.42.1324
|
| [17] |
QI MING, LUO JIN-SHENG. A STUDY ON THE PROPERTIES OF SiO2 THIN FILM THERMALLY NITRIDED IN AMMONIA AND ITS INTERFACE. Acta Physica Sinica,
1988, 37(10): 1600-1606.
doi: 10.7498/aps.37.1600
|
| [18] |
HUANG BING-ZHONG, YU YU-ZHEN, HONG GUO-GUANG. THE ROUGHNESS OF THE Si-SiO2 INTERFACE. Acta Physica Sinica,
1987, 36(7): 829-837.
doi: 10.7498/aps.36.829
|
| [19] |
LI SI-YUAN, ZHANG TONG-JUN, WANG IU-ZHEN, LI SHOU-SONG, YIN ZHI-PING. ANNEALING PROPERTIES OF GOLD-DOPED AND UNDOPED Si-SiO2 INTERFACES IN DRY OXYGEN. Acta Physica Sinica,
1985, 34(6): 715-724.
doi: 10.7498/aps.34.715
|
| [20] |
Liu LI-zhong. A SIMPLIFIED MERCURY PROBE FOR CONTROLLING THE QUALITY OF Si-SiO_2 INTERFACES. Acta Physica Sinica,
1977, 26(3): 281-284.
doi: 10.7498/aps.26.281
|
下载:
