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2014, 63(6): 067801.
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2014, 63(21): 216101.
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2013, 62(15): 157201.
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2013, 62(6): 068101.
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2011, 60(1): 017202.
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2011, 60(4): 047302.
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2010, 59(9): 6390-6393.
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Huang Wei, Chen Zhi-Zhan, Chen Bo-Yuan, Zhang Jing-Yu, Yan Cheng-Feng, Xiao Bing, Shi Er-Wei. Effect of hydrofluoric acid etching time on Ni/6H-SiC contacts. Acta Physica Sinica,
2009, 58(5): 3443-3447.
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Wu Yu-Yu, Chen Shi, Gao Xin-Yu, Andrew Thye Shen Wee, Xu Peng-Shou. Synchrotron radiation angle-resolved photoelectron spectroscopy studies of 6H-SiC（0001）-6[KF（]3[KF）]×6[KF（]3[KF）] R30° surface. Acta Physica Sinica,
2009, 58(6): 4288-4294.
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Jiang Yang, Luo Yi, Xi Guang-Yi, Wang Lai, Li Hong-Tao, Zhao Wei, Han Yan-Jun. Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy. Acta Physica Sinica,
2009, 58(10): 7282-7287.
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Tang Chao, Ji Lu, Meng Li-Jun, Sun Li-Zhong, Zhang Kai-Wang, Zhong Jian-Xin. Growth of graphene structure on 6H-SiC(0001): Molecular dynamics study. Acta Physica Sinica,
2009, 58(11): 7815-7820.
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Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong. Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica,
2009, 58(5): 3302-3308.
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Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E, Hu Yuan. An analytical model of mobility in nano-scaled n-MOSFETs. Acta Physica Sinica,
2006, 55(11): 6090-6094.
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Zhou Yong-Hua, Zhang Yi-Men, Zhang Yu-Ming, Meng Xiang-Zhi. Simulation and analysis of 6H-SiC pn junction ultraviolet photodetector. Acta Physica Sinica,
2004, 53(11): 3710-3715.
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2003, 52(4): 830-833.
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2001, 50(1): 106-110.
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2000, 49(9): 1786-1791.
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GUI YONG-SHENG, CHU JUN-HAO, CAI YI, HENG GUO-ZHEN, TANG DING-YUAN. STUDY ON THE ELECTRON MOBILITY FOR EACH SUBBAND ON THE n-HgCdTe ACCUMULATED LAYER. Acta Physica Sinica,
1998, 47(8): 1354-1360.
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